MOSFETs offer high-speed switching in portable electronics.

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Original Press Release:

Toshiba Small Signal MOSFETs for High-Speed Switching in Portable Electronics Achieve Low ON-Resistance and Capacitance

Broad S-MOS Family Suitable for Switching Applications or DC-DC Converters in Cellular Phones, Digital Cameras and other Mobile Electronic Devices IRVINE, Calif., Feb. 22 /-- Toshiba America Electronic Components, Inc. (TAEC)* has expanded its power semiconductor lineup with a broad selection of low ON-resistance small signal MOSFETs (S-MOS) suitable for high-speed switching devices or DC-DC converters in portable electronics equipment. The MOSFETs feature among the lowest ON-resistance and lowest capacitance in the industry in 2.8mm x 2.8mm and 1.6mm x 1.6mm packages and are designed to save space while meeting designers' requirements for smaller internal power loss and lower operating voltage in medium output current range applications such as laptop PCs, cellular phones, digital cameras and audio players. Developed by Toshiba Corp. (Toshiba), the S-MOS family includes 17 six-pin devices (SSM6K- and SSM6J-) designed for 0.5 Amp (A) to 2.5A load switching applications and DC-DC converters operating at 0.5 megahertz(1) (MHz) to 1MHz, and 20 three-pin devices (SSM3K- and SSM3J-) that are suitable for 0.5A to 4.0A switching devices. The six-pin devices, with ON-resistance from 30 milliohms to 400 milliohms, are available in an ultra-small 1.6mm x 1.6mm x 0.55mm package (ES6). The three-pin devices feature ON-resistance from 100 milliohms to 400 milliohms and are offered in a 2.8mm x 2.9mm x 0.7mm package (TSM). N- and P-channel polarities are available in either package, designated by K or J, respectively, in the part number. (See table below.) To support a wide range of design requirements, the six-pin S-MOS family includes N-channel devices with drain source voltage of 20V or 30V and driving voltage of 1.8V, 2.5V or 4V, and P-channel devices with -12V, -20V or -30V drain source voltage, and driving voltage of 1.5V, 1.8V, 2.5V or 4V. The three-pin S-MOS family includes N-channel devices with drain source voltage of 20V, 30V or 60V, and driving voltage of 1.8V, 2.5V or 4V, and P-channel devices with -12V, -20V or -30V drain source voltage, and driving voltage of 1.8V, 2.5V or 4V. "Advances in miniaturization of portable equipment are increasingly driving design decisions. At Toshiba, we are working to help our customers realize low capacitance and high speed switching, with lower operating voltages and smaller power losses, which translate into longer battery operation for their designs," said Homayoun Ghani, business development manager, microwave, RF and small-signal products, for TAEC. Technical Specifications Low ON-Resistance S-MOS (6-pin) in 1.6mm x 1.6mm Package (ES6)

Drain Gate Source Source Drain ON-resistance Input Voltage Voltage Current RDS(ON) max(milliohms) Capaci- Part VDSS VGSS (max.) VGS= VGS= VGS= VGS= tance Number Polarity (V) (V) Io (A) 1.5V 1.8V 2.5V 4.0V CiSS(pF) SSM6K203FE N-ch 20 +/-10 2.9 155 108 78 63 400 SSM6K202FE N-ch 30 +/-12 2.3 -- 132 95 85 270 SSM6K204FE N-ch 20 +/-10 2.0 307 214 164 126 195 SSM6K208FE N-ch 30 +/-12 1.8 -- 276 185 140 125 SSM6K25FE N-ch 20 +/-12 0.5 -- 395 190 145 268 SSM6K24FE N-ch 30 +/-12 0.5 -- -- 180 145 245 SSM6K22FE N-ch 20 +/-12 1.4 -- -- 230 170 125 SSM6K209FE N-ch 30 +/-20 2.4 -- -- -- 152 320 SSM6K30FE N-ch 20 +/-20 1.2 -- -- -- 420 60 SSM6K31FE N-ch 20 +/-20 1.2 -- -- -- 540 36 SSM6J53FE P-ch -20 +/-8 -1.8 364 204 136 -- 568 SSM6J206FE P-ch -20 +/-8 -2.0 -- 320 186 130 335 SSM6J205FE P-ch -20 +/-8 -0.8 -- 460 306 234 250 SSM6J26FE P-ch -20 +/-8 -0.5 -- 980 330 230 250 SSM6J23FE P-ch -12 +/-8 -1.2 -- -- 210 160 420 SSM6J25FE P-ch -20 +/-12 -0.5 -- -- 430 260 218 SSM6J207FE P-ch -30 +/-8 -1.3 -- -- -- 491 137

Technical Specifications Low ON-Resistance S-MOS (3-pin) 2.8mm x 2.9mm Package (TSM)

Drain Gate Source Source Drain ON-resistance Input Voltage Voltage Current RDS(ON) max(milliohms) Capaci- Part VDSS VGSS (max.) VGS= VGS= VGS= VGS= tance Number Polarity (V) (V) Io (A) 1.5V 1.8V 2.5V 4.0V CiSS(pF) SSM3K310T N-ch 20 +/-10 5.0 66 43 32 28 1120 SSM3K309T N-ch 20 +/-12 4.7 -- 47 35 31 1020 SSM3K301T N-ch 20 +/-12 3.5 -- 110 74 56 320 SSM3K302T N-ch 30 +/-12 3.0 -- 131 87 71 270 SSM3K01T N-ch 30 +/-10 3.2 -- -- 150 120 152 SSM3K02T N-ch 30 +/-10 2.5 -- -- 250 200 115 SSM3K311T N-ch 30 +/-20 4.8 -- -- -- 43 910 SSM3K14T N-ch 30 +/-20 4.0 -- -- -- 67 460 SSM3K303T N-ch 30 +/-20 2.9 -- -- -- 120 180 SSM3K308T N-ch 60 +/-20 2.1 -- -- -- 181 248 SSM3K12T N-ch 30 +/-20 3.0 -- -- -- 175 120 SSM3J13T P-ch -12 +/-8 -3.0 -- -- 95 70 890 SSM3J312T P-ch -12 +/-8 -2.7 -- 237 142 91 550 SSM3J304T P-ch -20 +/-8 -2.3 -- 297 169 127 335 SSM3J313T P-ch -20 +/-8 -1.5 -- 614 354 290 174 SSM3J01T P-ch -30 +/-10 -1.7 -- -- 600 400 240 SSM3J02T P-ch -30 +/-10 -1.5 -- -- 700 500 150 SSM3J14T P-ch -30 +/-20 -2.7 -- -- -- 170 413 SSM3J306T P-ch -30 +/-20 -2.4 -- -- -- 225 280 SSM3J305T P-ch -30 +/-20 -1.7 -- -- -- 477 137

Pricing and Availability Samples of the new Toshiba small signal MOSFETs are scheduled to be available in March 2007. These S-MOS devices range in price from $0.05 to $0.14 each in sample quantities. Toshiba's Discrete Products Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier and moved into fourth place in overall semiconductor sales. (Source: "2005 Worldwide Semiconductor Market Share Report," Gartner, released April 2006). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, optoelectronics, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets. *About TAEC Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets. TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer. In more than 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com. (1) For purposes of measuring frequency in this context, one Megahertz (MHz) = 1,000,000 cycles per second. CONTACT: Poloi Lin of Toshiba America Electronic Components, Inc., +1-949-623-3098, poloi.lin@taec.toshiba.com Web site: http://www.chips.toshiba.com/