High-Voltage MOSFETs enable efficient, high-speed switching.
Press Release Summary:
Targeting switching voltage regulator designs, N-channel enhancement mode MOSFETs are based on pi-MOS VIII (Pi-MOS-8) planar semiconductor process. Max leakage current is 10 µA, and gate threshold voltage range is 2.5–4.0 V. While 2.5 A TK3A90E and 4.5 A TK5A90E feature VDSS ratings of 900 V and respective RDS(ON) ratings of 3.7 and 2.5 Ω (typ), 4.0 A TK4A80E and 5.0A TK5A80E offer VDSS ratings of 800 V with typical RDS(ON) ratings of 2.8Ω and 1.9Ω, respectively.
Original Press Release:
Toshiba Introduces High-Voltage MOSFET Family for Efficient, High-Speed Switching
IRVINE, Calif. -- Toshiba America Electronic Components, Inc. (TAEC)* today announced a new lineup of ultra-efficient, high-speed, high-voltage MOSFETs for switching voltage regulator designs. Available with 800V and 900V ratings, the four N-channel devices (TK4A80E, TK5A80E, TK3A90E, TK5A90E) are targeted to applications including flyback converters in LED lighting, supplementary power supplies and other circuits that require current switching below 5.0A.
The new enhancement mode MOSFETs are based on Toshiba's pi-MOS VIII (Pi-MOS-8), the company's eighth generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. This technology supports reduced gate charge and capacitance compared to prior generations, without losing the benefits of low RDS(ON).
These MOSFETs represent low-current supplements to Toshiba's existing DTMOS IV line-up of 800V superjunction DTMOS IV devices. The 2.5A TK3A90E and 4.5A TK5A90E feature VDSS ratings of 900V and have typical RDS(ON) ratings of 3.7Ω and 2.5Ω, respectively. Both the 4.0A TK4A80E and 5.0A TK5A80E devices offer VDSS ratings of 800V with typical RDS(ON) ratings of 2.8Ω and 1.9Ω, respectively.
Toshiba's new high-voltage MOSFETs offer an ultra-low maximum leakage current of only 10µA (VDS = 640V for the 800V device; VDS = 720V for the 900V device) and a gate threshold voltage range of 2.5V to 4.0V. All of the devices are supplied in a standard TO-220SIS form factor.
Key Features
Low drain-source on-resistance
Low leakage current
Enhancement mode
Packaging and Internal Circuit
Main Specifications
Part NumberVDSS (max)ID (max)Rds(on) maxQg (typ)TK4A80E800V4.0A3.5 Ω15 nCTK5A80E800V5.0A2.4 Ω20 nCTK3A90E900V2.5A4.6 Ω15 nCTK5A90E900V4.5A3.1 Ω20 nC
Pricing and Availability
Toshiba's new high-voltage MOSFETs are available now. Please contact your local Toshiba Sales Office for samples.
*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, advanced materials and medical tubes that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor, solid state drive and hard disk drive manufacturer and the world's seventh largest semiconductor manufacturer (Gartner, 2015 Worldwide Semiconductor Revenue, January, 2016). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 550 consolidated companies employing over 188,000 people worldwide (as of March 31, 2016). Visit Toshiba's web site at http://toshiba.semicon-storage.com.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.
MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com
CONTACT: Rebecca Bueno, Toshiba America Electronic Components, Inc., Tel.: (949) 462-7885, rebecca.bueno@taec.toshiba.com
