RF Power Transistors suit radar pulsed applications.
September 2, 2014 -
Consisting of gold-metalized unmatched GaN on Silicon Carbide, Models MAGX-000035-015000 and MAGX-000035-01500S deliver 17 W of peak output power with 15.5 dB of power gain and 63% drain efficiency. Devices provide 50 V operation over frequency range of DC–3.5 GHz. Offered in both enhanced flanged and flangeless ceramic package, transistors have MTTF of 600 years and are suitable for civilian and military radar pulsed applications.
MACOM Extends Industry Leading GaN Portfolio with New 15 W GaN on SiC Pulsed Power Transistor
M/A-COM Technology Solutions, Inc.
100 Chelmsford Street
Lowell, MA, 01851
Press release date: August 25, 2014
Unmatched Transistor Delivers 63% Drain Efficiency with 50 V Operation over DC-3.5 GHz
Lowell, MA — M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced a new GaN on SiC HEMT Pulsed Power Transistor for civilian and military radar pulsed applications.
The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. These high performance transistors are assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.
“The new 15 W peak GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range,” said Paul Beasly, Product Manager. “The device is an ideal driver stage for MACOM’s higher power GaN transistors for L-Band and S-Band pulsed radar applications.”
Operating between the DC-3.5 GHz frequency range, the devices are highly robust transistors with high voltage breakdowns and boast a mean time to failure (MTTF) of 600 years. The product is offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package which provide excellent thermal performance.
The table below outlines typical performance for the 1.2-1.4 GHz frequency band.
| Parameters || Units || MAGX-000035-015000/S |
| Frequency || GHz || DC-3.5 |
| Pout || W || 17.7 |
| Power Gain || dB || 15.5 |
| Drain Efficiency || % || 63 |
| Droop || dB || 0.1 |
| Load Mismatch Stability || VSWR-S || 5:1 |
| Load Mismatch Tolerance || VSWR-T || 10:1 |
Samples of MAGX-000035-015000 and MAGX-000035-01500S are available from stock. Final datasheets and additional product information can be obtained from the MACOM website at: www.macom.com.
Come visit us and ask us about our GaN portfolio at Booth #131 at European Microwave Week (EuMW) 2014, October 7-9, 2014.
M/A-COM Technology Solutions Holdings, Inc. (www.macom.com) is a leading supplier of high performance analog RF, microwave, and millimeter wave products that enable next-generation Internet and modern battlefield applications. Recognized for its broad catalog portfolio of technologies and products, MACOM serves diverse markets, including high speed optical, satellite, radar, wired & wireless networks, CATV, automotive, industrial, medical, and mobile devices. A pillar of the semiconductor industry, we thrive on more than 60 years of solving our customers' most complex problems, serving as a true partner for applications ranging from RF to Light.
Headquartered in Lowell, Massachusetts, M/A-COM Tech is certified to the ISO9001 international quality standard and ISO14001 environmental management standard. M/A-COM Tech has design centers and sales offices throughout North America, Europe, Asia and Australia.
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