Product News: Electronic Components & Devices

Power MOSFET targets heavy-duty automotive applications.

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Press Release Summary:

December 7, 2012 - Housed in 7-pin D²PAK package, 40 V n-channel TrenchFET® SQM200N04-1m1L features ultra-low on-resistance of 1.1 mΩ max at 10 V and 1.3 mΩ max at 4.5 V. Continuous drain current of 200 A can be sustained, enabling engineers to create designs with additional margin for safety-critical applications. Designed to withstand single pulse avalanche events of 100 A and 500 mJ, AEC-Q101-qualified MOSFET is RoHS-compliant and operates from -55 to +175°C with thermal resistance of 0.4°C/W.

Vishay

63 Lincoln Hwy., P.O. Box 4004, Malvern, PA, 19355, USA

Original Press Release

New Vishay Siliconix AEC-Q101-Qualified 40 V TrenchFET Power MOSFET Features 1.1 mohm RDS(on)

Press release date: December 6, 2012

New Vishay Siliconix AEC-Q101-Qualified, 40 V N-Channel TrenchFET® Power MOSFET Features Low On-Resistance Down to 1.1 mΩ and Continuous Drain Current of 200 A in 7-Pin D²PAK Packaging

MALVERN, Pa. —  Vishay Intertechnology Inc. (NYSE: VSH) today introduced a new AEC-Q101-qualified, 40 V n-channel TrenchFET® power MOSFET. Specifically for "heavy duty" automotive applications, the SQM200N04-1m1L is Vishay's first power MOSFET to take advantage of the low resistance contribution and very high current rating of the 7-pin D²PAK package.

When combined with Vishay's high-density n-channel TrenchFET technology, the result is an ultra-low on-resistance of 1.1 mΩ max at 10 V and 1.3 mΩ max at 4.5 V, allowing the device to minimize conduction losses and operate at lower temperatures. In addition, a continuous drain current of 200 A can be sustained, allowing engineers to create robust designs with an additional margin for safety-critical applications.

The SQM200N04-1m1L released today is optimized for high-power automotive motor drive applications, including electric power steering. The device is designed and 100 % tested in production to withstand single pulse avalanche events of 100 A and 500 mJ. It also features low thermal resistance of 0.4 °C/W (junction to case), and a wide operating temperature range of - 55 °C to + 175 °C.

The SQM200N04-1m1L is RoHS-compliant, halogen-free, and 100 % Rg and UIS tested. The device extends Vishay's family of AEC-Q101 qualified TrenchFET power MOSFETs, more information on which can be found at http://www.vishay.com/mosfets/automotive-mosfets/.

Samples and production quantities of the new automotive power MOSFET are available now, with lead times of 14 to 16 weeks for large orders. Pricing for U.S. delivery only starts at $1.25 per piece in 100,000-piece quantities. Follow Vishay power MOSFETs for automotive applications at http://twitter.com/vishayindust.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

TrenchFET is a registered trademark of Siliconix incorporated

Worldwide Reader Contacts:
Vishay Intertechnology, Inc.
Email: info@vishay.com
Web: www.vishay.com

Link to datasheet:
http://www.vishay.com/doc?62679  (SQM200N04-1m1L)

Link to product photo:
http://www.flickr.com/photos/vishay/8226798255



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