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P-Channel MOSFET increases efficiency in mobile computing devices.

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P-Channel MOSFET increases efficiency in mobile computing devices.
P-Channel MOSFET increases efficiency in mobile computing devices.

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January 9, 2014 - Supplied in 6.15 x 5.15 mm PowerPAK® SO-8 package, -20 V Si7157DP TrenchFET® p-channel Gen III power MOSFET offers respective on-resistance of 0.0016 and 0.0020 Ω at -10 and -4.5 V. On-resistance values enable designers to achieve lower voltage drops and conduction losses in circuits, promoting efficient use of power and consequently extending battery run times. RoHS-compliant product is optimized for load and battery switches in power management applications for notebook computers.
Original Press Release

Vishay
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355
USA



Vishay Intertechnology Offers New Industry-Low RDS(on) for a P-Channel MOSFET


For Mobile Computing, P-Channel Gen III MOSFET Offers RDS(on) Down to 0.0016 Ω at -10 V in PowerPAK® SO-8 Package

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today extended its offering of TrenchFET® p-channel Gen III power MOSFETs with a new device that offers the lowest on-resistance ever for a p-channel MOSFET. Designed to increase efficiency in mobile computing devices, the -20 V Vishay Siliconix Si7157DP offers on-resistance of 0.0016 Ω and 0.0020 Ω at -10 V and -4.5 V ratings, respectively.

The Si7157DP is optimized for load and battery switches in power management applications for notebook computers. Today's designers are under pressure to make these devices thinner and lighter, which means reducing battery sizes and, consequently, their run times. At the same time, features such as graphics and WiFi increase battery usage, making power efficiency a paramount goal.

The industry-low on-resistance of the Si7157DP allows designers to achieve lower voltage drops and conduction losses in their circuits, enabling more efficient use of power and longer battery run times — especially in peak load conditions — while its compact 6.15 mm by 5.15 mm PowerPAK® SO-8 package footprint area saves valuable PCB space. The device's lower voltage drop at peak currents also provides a larger voltage margin over the UVLO (undervoltage lockout) level, helping prevent undesired undervoltage lockout conditions with the load.

The Si7157DP is 100 % Rg- and UIS-tested. The MOSFET is halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU. Like other Vishay Siliconix p-channel Gen III MOSFETs, the Si7157DP is built on the latest process technology that packs one billion transistor cells into each square inch of silicon. More information on the company's lineup of p-channel Gen III MOSFETs is available at http://www.vishay.com/mosfets/geniii-p/.

Samples and production quantities of the new p-channel MOSFET are available now, with lead times of 12 to 16 weeks for larger orders. Pricing for U.S. delivery only starts at $0.35 per piece in 100,000-piece quantities.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

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