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Normally-Off 100V GaN Transistors come in low-inductance package.

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May 30, 2014 - Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance.

GaN Systems Launches Five New Normally-Off 100V GaN Transistors in Optimised Low Inductance and Thermally-Efficient Packaging


GaN Systems Corp.
2723 South State Street, Suite 150
Ann Arbor, MI, 48104
USA



Press release date: May 1, 2014

Optimised for highspeed design; low on resistance and Total Gate Charge

OTTAWA, Ontario – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, has announced a family of normally-off 100V GaN transistors that spans 20-80A with very low on resistance. GS61002P, GS61004P, GS61006P and GS61008P are respectively 20A/21mΩ, 40A/11mΩ, 60A/8mΩ and 80A/5mΩ parts while GS71008P is an 80A/5mΩ half bridge device.

The new enhancement mode parts feature a reverse current capability, source-sense for optimal high speed design and exceptionally low Total Gate Charge (QG) and Reverse Recovery Charge (QRR). RoHS compliant, the devices are delivered in GaN Systems’ near chipscale, embedded GaNPX package which minimises inductance and optimises thermal performance.

Girvan Patterson, President of GaN Systems comments: "We believe we are the first company to have such a wide range of parts available for are sampling now. Applications include high speed DC-DC converters, low voltage AC motor drives, inverters and switched mode power supplies.”

About GaN Systems
GaN Systems is the first place systems designers go to realize all the benefits of gallium nitride in their power conversion and control applications.  To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching solutions for a variety of markets.  Its unique Island Technology® addresses today’s cost, performance, and manufacturability challenges of gallium nitride resulting in devices that are smaller and more efficient than traditional design approaches.  The Company also leverages existing multi‐sourced manufacturing processes due to its transportable, fabless model, and makes it easy to incorporate gallium nitride into any design.  GaN Systems is run by a seasoned semiconductor team with decades of industry experience and a track record of repeated success.  The Company is leading the widespread adoption of gallium nitride into the power conversion industry. For more information, please visit: www.gansystems.com

More Information
Tracy Lamb
Corporate Communications
GaN Systems
+1 (613) 686-1996 ext. 149 (office)
tlamb@gansystems.com
www.gansystems.com

For press enquiries:
Nick Foot
PR Director
BWW Communications
Tel.: +44 1491-636393
nick.foot@bwwcomms.com
www.bwwcomms.com
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