Non-Punch Through IGBTs serve high-performance applications.
March 21, 2013 -
With 25, 50, and 70 A current ratings, 1,200 V non-punch through (NPT) IGBTs are based on Power MOS 8™ technology and can be packaged with Microsemi FREDs or silicon carbide Schottky diodes. Gate charge promotes accelerated switching, while hard switching operation greater than 80 kHz lends to power conversion efficiency. SMT backside solderable D(3) package option is available for these Short Circuit Withstand Time Rated (SCWT) products.
|Original Press release |
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Microsemi Adds Multiple New Devices to Non-Punch through (NPT) IGBT Product Family
New 25A, 50A and 70A IGBTs Designed for High Power, High Performance Industrial Applications
ALISO VIEJO, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced the availability of more than a dozen new devices in its new generation of 1200 volt (V) non-punch through (NPT) IGBTs which include 25A, 50A and 70A current ratings.
Microsemi's NPT IGBT product family is designed for a wide range of industrial applications requiring high power and high performance, with the newest devices well-suited for arc welders, solar inverters, and uninterruptible and switch mode power supplies. All of the devices in this 1200V product family are based on Microsemi's advanced Power MOS 8((TM)) technology, which enables a significant reduction of at least 20 percent in total switching and conduction losses as compared to competitive solutions.
Consistent with all devices in the product family, Microsemi's new NPT IGBT solutions can be packaged with Microsemi's FREDs or silicon carbide Schottky diodes to provide engineers with a highly integrated solution that allows them to streamline product development efforts. Additional features include:
--† Significantly lower gate charge than similar devices, allowing faster switching;
--† Hard switching operation greater than 80 kilohertz to enable efficient power conversion;
--† Easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications; and
--† Short Circuit Withstand Time Rated (SCWT), providing reliable operation in applications requiring short circuit capability.
In addition to the benefits of the device, Microsemi offers NPT IGBTs in a large surface mount backside solderable D(3) package, allowing designers to achieve increased power density and lower manufacturing costs.
Packaging and Availability
Microsemi's 1200V NPT IGBT product family now consists of over 20 devices with current ratings of 25A, 40A, 50A, 70A and 85A. The IGBT products are available in D(3), TO-247, T-MAX, TO-264 and SOT-227 packages.
The new devices are in production now. For more information, or to obtain a sample, please email email@example.com or contact your local distributor or Microsemi sales representative.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.
Director of Corporate Communications
Beth P. Quezada