N-Channel Power MOSFET (100 V) offer optimized on-resistance.
January 8, 2013 -
Respectively, SiB456DK and SiA416DJ TrenchFET® power MOSFETs come in thermally enhanced PowerPAK® SC-75 1.6 x 1.6 mm and PowerPAK SC-70 2 x 2 mm packages and offer on-resistance of less than 200 and 100 mΩ. Respective on-resistance times gate charge values for SiA416DJ are 540 mΩ-nC at 10 V and 455 mΩ-nC at 4.5 V, while values for SiB456DK are 611 mΩ-nC at 10 V and 558 mΩ-nC at 4.5 V. MOSFETs are optimized for boost converters, low-power DC/AC inverters, and primary side switching.
|Original Press release |
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
New Vishay Siliconix 100 V N-Ch TrenchFET Power MOSFETs Featuring ThunderFET Technology Offer Industry-Low On-Resistance Down to 83 mohm in 1.6 mm by 1.6 mm and 2 mm by 2 mm Footprint Areas
MALVERN, Pa. – Vishay Intertechnology, Inc. (NYSE: VSH) today released two new 100 V n-channel TrenchFET® power MOSFETs that extend Vishay's ThunderFET® technology to smaller package sizes. The SiB456DK and SiA416DJ are the industry's first 100 V n-channel devices in the compact, thermally enhanced PowerPAK® SC-75 1.6 mm by 1.6 mm and PowerPAK SC-70 2 mm by 2 mm footprint areas to offer on-resistance of less than 200 mΩ and 100 mΩ, respectively.
The MOSFETs released today are optimized for boost converters, low-power DC/AC inverters, and primary side switching in miniature DC/DC converters for telecom bricks, point-of-load applications, and LED lighting in portable equipment. For designers, the devices' ultra-compact PowerPAK SC-75 and PowerPAK SC-70 packages save PCB space in these applications, while their low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency. In addition, the MOSFETs' on-resistance rating down to 4.5 V simplifies gate drives.
In applications where on-resistance is more critical than size, the 2 mm by 2 mm SiA416DJ offers a maximum on-resistance of 83 mΩ at 10 V and 130 mΩ at 4.5 V, and a low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — of 540 mΩ-nC at 10 V and 455 mΩ-nC at 4.5 V. For applications where size is more critical, the 1.6 mm by 1.6 mm SiB456DK features maximum on-resistance of 185 mΩ at 10 V and 310 mΩ at 4.5 V, and an FOM of 611 mΩ-nC at 10 V and 558 mΩ-nC at 4.5 V.
The SiB456DK and SiA416DJ are 100 % Rg and UIS tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
Samples and production quantities of the new MOSFETs are available now, with lead times of 12 to 14 weeks for large orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.15 per piece. Follow ThunderFET power MOSFETs at http://twitter.com/vishayindust.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET, ThunderFET, and PowerPAK are registered trademarks of Siliconix incorporated.