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GaN HEMTs target 1.2-1.4 GHz L-band radar systems.

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GaN HEMTs target 1.2-1.4 GHz L-band radar systems.
GaN HEMTs target 1.2-1.4 GHz L-band radar systems.
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August 27, 2013 - Based on 50 V, 0.4 GaN on SiC foundry process, Models CGHV14250and CGHV14500 optimize performance of band-specific applications ranging from UHF to 1,800 MHz. Model CGHV14250 features 330 W typical output power, 18 dB power gain, and 77% typical drain efficiency, while Model CGHV14500 provides 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Available in ceramic/metal flange and pill packages, both transistors feature 0.3 dB pulsed amplitude droop.

Cree Releases Two New GaN HEMTs for L-Band Radar Systems


(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)

Cree, Inc.
4600 Silicon Dr
Durham, NC, 27703
USA



Acrobat PDF  Additional information provided by manufacturer

Press release date: August 22, 2013

Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2–1.4GHz L-Band radar amplifier systems: the 250W CGHV14250 and the 500W CGHV14500. Featuring the highest known L-Band efficiency performance at 85C, high power gain performance, and wide bandwidth capabilities, the new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800MHz, including: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems.

Based on Cree’s 50V 0.4 GaN on SiC foundry process, Cree’s new GaN HEMTs for L-Band radar systems provide engineers with excellent power and small signal performance, are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility.

The 250W CGHV14250 features 330W typical output power, 18dB power gain, and 77% typical drain efficiency. The 500W CGHV14500 features 500W typical output power, 17dB power gain, and 70% typical drain efficiency. Both the 250W and 500W GaN HEMTs feature 0.3dB pulsed amplitude droop.

To view a video demonstration of the CGHV14500, please visit: http://www.youtube.com/watch?v=1GFAxg7IfFM. To access datasheets for the new 250W and 500W GaN HEMTs, please visit: http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGHV14250.pdf and http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGHV14500.pdf. Large-scale models are available at Agilent ADS and AWR Microwave, and stock will be available at Digikey by September.

For additional information, please visit www.cree.com/rf or contact Sarah Miller, Marketing and Export, Cree RF Components, at sarah_miller@cree.com or 919-407-5302.
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User comments about this story

Large signal model for CGHV14500

Hi,
I have question about one of your product, " L-Band High Power transistor, " CGHV14500"",
Is there a model and S-parameter for CGHV14500,
If yes, so, How can I find it, I can't find the model and the S-parameter in your website, (www.cree.com)
Please help me about this,
thanks.

By majid on Dec 16, 2013 11:36

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