Press Release Summary:
Targeting high-voltage integrated LED driver devices, modular BCD (Bipolar, CMOS DMOS) process technologies feature voltage spectrum running from 12-60 V to support multiple LED applications. Technology portfolio spans process nodes from 0.6-0.18 micron, with various digital core modular options for varying digital control circuit gate densities. CyberShuttle(TM) prototyping service supports 0.25 and 0.18 micron processes for preliminary function verification.
Original Press Release:
TSMC Announces Process Technologies for Integrated LED Drivers
Integration Features Lowers Overall Systems Component Counts
HSINCHU, Taiwan, R.O.C.-- Taiwan Semiconductor Manufacturing Company, Ltd. (TWSE: 2330, NYSE: TSM) today unveiled modular BCD (Bipolar, CMOS DMOS) process technologies targeting high voltage integrated LED driver devices.
The new BCD technologies feature a voltage spectrum running from 12 to 60 volts to support multiple LED applications including LCD flat panel display backlighting, LED displays, general lighting and automotive lighting. The technology portfolio spans process nodes from 0.6-micron to 0.18-micron with a number of digital core modular options for varying digital control circuit gate densities. The CyberShuttle(TM) prototyping service supports the 0.25-micron and 0.18-micron processes for preliminary function verification.
The new processes provide a number of integration features that reduce a system's component counts. The robust high voltage DMOS capability provides MOSFET switch integration to reduce the bill of materials (BOM). The integrated component options include high voltage bipolar transistors, high voltage, high precision capacitors, high resistance poly and Zener diodes to reduce external passive component count and significantly reduce circuit board area.
The DMOS process supports foundry's leading Rdson performance (i.e.; 72 mohm per mm2 at BV>80 volts for a specific 60V NLDMOS) and its high current driving capability optimizes device sizes that enhance power efficiency. A robust safe operating area (SOA) makes it ideal for both power switch and driver design. Fine detailed characterization also provides a useful reference to optimize the design budget for optimum chip size.
On the CMOS side, a 5-volt capability supports analog Pulse Width Modulation (PWM) controller design elements and the 2.5-volt and 1.8-volt logic cores are optional modules for higher-level digital integration. In addition, logic compatible one-time programmable (OTP) and multi-time programmable (MTP) memory options are available for enhanced digital programming design.
"The new BCD technologies for LED drivers are very leading edge in driving device integration. The associated PDKs feature highly accurate SPICE models that really enhance the potential for easy single chip design," points out George Liu, Director, Industrial Business Development. "In addition, mismatching models help optimize current mismatching performance in multi-channel LED driver designs."
TSMC is the world's largest dedicated semiconductor foundry, providing the industry's leading process technology and the foundry's largest portfolio of process-proven libraries, IP, design tools and reference flows. The Company's total managed capacity in 2008 exceeded 9 million 8-inch equivalent wafers, including capacity from two advanced 12-inch -GigaFabs(TM), four eight-inch fabs, one six-inch fab, as well as TSMC's wholly owned subsidiaries, WaferTech and TSMC (China), and its joint venture fab, SSMC. TSMC is the first foundry to provide 40nm production capabilities. Its corporate headquarters are in Hsinchu, Taiwan. For more information about TSMC please visit http://www.tsmc.com/.