MOSFETs suit power factor correction applications.

Press Release Summary:

Models FCP11N60 and FCPF11N60 utilize SuperFET(TM) technology, which implements compensation region using multi-epitaxy layer to improve on-resistance. Both models provide di/dt of 1,430 A/µsec max, resulting from wide body-diode profile. Other characteristics include RDS(on) of 0.32 ohm, low effective output capacitance of Coss=35nC, and optimized gate charge levels of Qg=40nC. Models FCP11N60 and FCPF11N60 are available in TO-220 and TO-220F packaging, respectively.

Original Press Release:

Fairchild Semiconductor's New High-Voltage SuperFET(TM) MOSFETs Offer Advanced Performance for Efficiency and Reliability in Switch Mode Power Supplies and Power Factor Correction Applications

South Portland, Maine- February 24, 2004 - Fairchild Semiconductor (NYSE: FCS) announces two high-voltage MOSFETs utilizing Fairchild's new SuperFET(TM) technology to significantly reduce system power loss, increasing efficiency and reliability in SMPS (Switch Mode Power Supply) and PFC (Power Factor Correction) applications. Fairchild's proprietary SuperFET technology implements a compensation region using a multi epitaxy layer to improve on-resistance. The new FCP11N60 and the FCPF11N60 SuperFET MOSFETs feature low Figure of Merit (FOM = RDS(on) x Qgd), with the FCP11N60 device offering the best available FOM compared to products of the same RDS(on) level. Both the FCP11N60 and FCPF11N60 provide best-in-class di/dt (1430 A/us, max) resulting from the devices' wide body-diode profile to ensure increased ruggedness, ultra-low RDS(on) (0.32 ohm, typical), and low effective output capacitance (Coss=35nC, typical). Providing the same on-resistance as standard planar MOSFETs in TO-3P packages, Fairchild's new TO-220 and TO-220F packaged MOSFETs provide improved power density. The FCP11N60 and the FCPF11N60 offer optimized gate charge levels (Qg=40nC, typical) for reduced gate driver power rating and switching power losses. "Fairchild's line of SuperFET high-voltage MOSFETs offers designers comparatively low output capacitance in the same stored energy, which is especially beneficial in SMPS applications," said Taehoon Kim, vice-president of Fairchild's High Power Product Group. The new FCP11N60 and the FCPF11N60 are available in TO-220 and TO-220F packaging, respectively. This lead-free (Pb-free) product meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020B and is compliant with the European Union requirements, which will take effect in 2005. The introduction of SuperFET MOSFETs complements Fairchild's solutions for SMPS and DC/DC conversion applications such as PFC/PWM controllers, bridge rectifiers, and optocouplers. For more information about these products, please visit: www.fairchildsemi.com/pf/FC/FCP11N60.html and www.fairchildsemi.com/pf/FC/FCPF11N60.html. For information on other Fairchild products, design tools, and sales contacts, please visit www.fairchildsemi.com. Price: FCP11N60 (TO-220): US$ 3.04 and FCPF11N60 (TO-220F): US$ 3.19 (both per 1K pcs). Availability: Now Delivery: 16 weeks from ARO About Fairchild Semiconductor: Fairchild Semiconductor (NYSE: FCS) is a leading global supplier of high performance products for multiple end markets. With a focus on developing leading edge power and interface solutions to enable the electronics of today and tomorrow, Fairchild's components are used in computing, communications, consumer, industrial and automotive applications. Fairchild's 10,000 employees design, manufacture and market power, analog & mixed signal, interface, logic, and optoelectronics products from its headquarters in South Portland, Maine, USA and numerous locations around the world. Please contact us on the web at www.fairchildsemi.com.