MOSFET saves space in battery-management applications.

Press Release Summary:

Model FDZ299P P-channel MOSFET, with PowerTrench® technology, is housed in 1.5 x 1.5 mm BGA package. It reduces parasitic system power drain by providing low-loss switching with max steady-state current of 4.6 A. RDS(on) at 4.5 V Vgs is 55 mOhm, and 80 mOhm at 2.5 V Vgs. Package height of 0.8 mm fits under RF shields and internal subassemblies and displays. Applications include cell phones, PDAs, portable music players, GPS receivers, and digital cameras.

Original Press Release:

Fairchild's Low-Voltage P-Channel MOSFET in BGA Packaging Provides Top Performance and Up to 75% Size Reduction in Battery Management Applications

San Jose, Calif.-May 20, 2003- Fairchild Semiconductor International (NYSE:FCS) today announced the FDZ299P, the industry's best solution when combining electrical and thermal performance with size. This new P-Channel MOSFET's high-performance PowerTrench® technology is housed in an ultra-small, 1.5 X 1.5mm BGA (ball grid array) package- offering a 75% size reduction compared to standard SSOT-6 or TSSOP-6 MOSFETs currently used in similar applications. This makes the FDZ299P an ideal solution for power management applications such as cell phones, PDAs, portable music players, GPS receivers, and digital cameras. Fairchild's FDZ299P, at 80mohm x 2.25mm2 = 180, offers a 75% better Footprint Figure of Merit (FFOM) when compared to a standard TSSOP-6 device with an FFOM of 80mohm X 9.0mm2 = 720. A MOSFET's FFOM (RDS(On) x footprint size in mm2) is a critical parameter for evaluating performance. The FDZ299P also reduces parasitic system power drain by providing low-loss switching (maximum steady-state current of 4.6A). The package height of the FDZ299P (maximum 0.8 mm) allows this product to be used under RF shields and internal sub-assemblies and displays, fulfilling the industry growing demand for products with thinner, low-profile packages. In addition to packaging advantages, this new device provides extremely low RDS(on) (55 mohm @ VGS = -4.5V and 80 mohm @ VGS = -2.5V) and low gate charge (@VGS =4.5V, Qg =9 nC). "Typical MOSFETs in standard packages of comparable size cannot dissipate above 150mW or handle a steady-state current above 350mA," said Chris Winkler, Fairchild's Market Development Manager for portable products applications. "The FDZ299P, with its 1.7W of dissipation, leads the way when it comes to thermal performance and current handling capability." The addition of this MOSFET BGA further expands Fairchild's innovative package offering that includes FLMP, MicroPak(TM), and DQFN packaging.

Electrical and Thermal Performance: 1.5 X 1.5mm BGA vs. SSOT-6 New Advanced Packages Established Packages Parameter FDZ299P FDC640P / FDC640P Package Type 1.5 x 1.5mm BGA SSOT-6 / TSSOP-6 BVdss 20V 20V VGS max 12V 12V Id max (steady-state) 4.2 4.5A RDS(on) @ 4.5V Vgs 55mOhm 53mOhm RDs(on) @ 2.5V Vgs 80mOhm 80mOhm Rpheta-JA degees CW 72 78 Watts (max) 1.7W 1.6W Package Size 2.25 mm2 9.0 mm2

Price: US $0.66 (1000 pcs.) Availability: Now Delivery: 8 weeks ARO For more information, contact Fairchild Semiconductor's Customer Support Center at (888) 522-5372, fax (972) 910-8036, or visit Fairchild's website at www.fairchildsemi.com. Fairchild Semiconductor International: Fairchild Semiconductor International (NYSE: FCS) is a leading global supplier of high performance products for multiple end markets. With a focus on developing leading edge power and interface solutions to enable the electronics of today and tomorrow, Fairchild's components are used in computing, communications, consumer, industrial and automotive applications. Fairchild's 10,000 employees design, manufacture and market power, analog & mixed signal, interface, logic, and optoelectronics products from its headquarters in South Portland, Maine, USA and numerous locations around the world. Please contact us on the web at www.fairchildsemi.com.