MOSFET provides thermal dissipation.

Press Release Summary:

Optimized for half- or full-bridge inverter designs, 40 V Model FDD8424H integrates P-channel high-side MOSFET and N-channel low-side MOSFET into single device, allowing common drain connection. It offers thermal resistance of 4.1 C/W for N-channel and 3.5 C/W for P-channel. Equipped with Dual DPAK packaging, lead-free device is suited for use in backlighting units for LCD TVs, LCD monitors, motor drives, and lamp drives.


Original Press Release:

Semiconductor's Complementary 40V MOSFET Enables Size, Cost and Reliability Improvements for LCD Designs

SAN JOSE, Calif.-May 8, 2007-Fairchild Semiconductor (NYSE: FCS) introduces the FDD8424H , a complementary 40V MOSFET that provides Dual DPAK packaging and industry-leading thermal dissipation to increase system reliability, reduce board space and decrease overall system cost. Optimized for half- or full-bridge inverter designs, the FDD8424H is ideal for use in backlighting units (BLU) for LCD TVs, LCD monitors, motor drives and lamp drives. Compared to alternative solutions, the FDD8424H in Dual DPAK provides thermal resistance that is five and 10 times lower than solutions using 8-lead and dual SOIC (SO8) packages, respectively. In addition, the integration of a P-channel high-side MOSFET and an N-channel low-side MOSFET into a single package allows a common drain connection within the device, simplifying board layout and reducing design time. "Fairchild's FDD8424H offers display designers the ability to optimize the footprint and the thermal performance of their inverter designs," said Mike Speed, Fairchild's marketing manager for Communications and Consumer Products. "The optimization of RDS(ON) and gate charge (Qg) in a Dual DPAK offers improved switching performance compared to conventional SO8 solutions, resulting in lower heat dissipation and increased efficiency. Also, the FDD8424H provides 12 percent lower case temperature in backlighting inverters while driving eight CCFL lamps." Key features of the FDD8424H include: o-Combination of RDS(ON) and gate charge (Qg) provides excellent switching performance. o-Best-in-class thermal resistance (Theta JC) is 4.1C/W for N-channel, and 3.5 C/W for P-channel. o-Half-bridge solution in one package reduces device footprint and overall system cost. o-Integration of P-channel and N-channel MOSFETs with common drain connection simplifies the layout. This lead (Pb)-free device meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020C and is compliant with European Union regulations now in effect. Price (each, 1000 pcs): US$ 0.69 Availability: Now Delivery: 6 to 8 weeks Contact Information: To contact Fairchild Semiconductor about this product, please go to: www.fairchildsemi.com/cf/sales_contacts/. For information on other products, design tools and sales contacts, please visit: www.fairchildsemi.com. Editors Note: For a datasheet in PDF format, please go to www.fairchildsemi.com/ds/FD/FDD8424H.pdf. About Fairchild Semiconductor: Fairchild Semiconductor (NYSE: FCS) is the global leader in power analog and power discrete technologies delivering energy-efficient solutions for all electronic systems. Recognized as The Power Franchise®, Fairchild provides leading-edge silicon and packaging technologies, manufacturing strength and system expertise. In 2007, Fairchild celebrates its "50/10" anniversary, commemorating 10 years as a new company and 50 years in the industry. Known as the "Father of Silicon Valley," Fairchild developed the planar transistor in 1958-and with it a new industry. Today, Fairchild is an application-driven, solution-based semiconductor supplier providing online design tools and design centers worldwide as part of its comprehensive Global Power Resource(TM). Please contact us on the web at www.fairchildsemi.com. Editorial Contacts: Fairchild Semiconductor Sona Kim, Market Development Program Manager 3001 Orchard Parkway San Jose, CA 95134 (408) 822-2279 Fax: (408) 822-2410 Email: sona.kim@fairchildsemi.com

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