Mobile Fast Cycle RAM uses DDR burst mode operation.

Press Release Summary:

Compliant with Mobile RAM Revision 4 specifications, 256 Mbit Model MB82DDS08314A consists of Pseudo Static RAM with SRAM interface based on FCRAM technology. It provides multiplexed address/data interface and data transfer speed of 1 GB/s. Device offers various power-down modes from full-sleep mode to partial shutdown for power conservation. Operating on 1.7-1.95 V, Model MB82DDS08314A features 135 MHz burst frequency, max initial access time of 45 ns, and max clock access time of 6 ns.

Original Press Release:

Fujitsu Introduces New Low-Power 256Mbit FCRAM(TM) for Mobile Applications

commpliant with COSMORAM Rev 4, Provides High Speed and Low Power

SUNNYVALE, Calif., Dec. 4 /-- Fujitsu Microelectronics America, Inc. (FMA) today announced a new 256Mbit Mobile Fast Cycle RAM (FCRAM), a Pseudo Static RAM (PSRAM) with an SRAM interface based on Fujitsu's proprietary FCRAM core technology. The high-speed operation and low power consumption of the new MB82DDS08314A make it an ideal design choice for mobile applications such as cellular handsets.

The new FCRAM uses double data rate (DDR) burst mode operation and is fully compliant with the common specifications for Mobile RAM (COSMORAM) Revision 4. The new FCRAM also features a multiplexed address/data interface, high-speed data transfer reaching 1GBytes/s, and rapid initial access time, which is enabled by a very short latency mode.

The MB82DDS08314A minimizes device pin counts by multiplexing address and data buses. Smaller pin counts eliminate the need for complicated board designs.

"High-end mobile phones require feature-rich functions such as digital still cameras, video cameras, and digital terrestrial broadcasting streaming. With the growing popularity of high-performance smart phones, high-density, high-speed FCRAMs are essential. The Fujitsu FCRAM family provides very high- speed data rates to enhance the mobile phone feature on the existing PSRAM- based platform," said Tong Swan Pang, product marketing manager of Fujitsu Microelectronics America.

The Fujitsu 256Mbit FCRAM offers various power-down modes from full-sleep mode to partial shutdown to efficiently manage power conservation depending on the needs of the user. This prolongs battery life for mobile phones.

Fujitsu has a strong history of delivering solutions to meet the needs of high-speed memory applications. Fujitsu pioneered the Pseudo SRAM for mobile phones and is a major contributor to the market. The company introduced its burst mode Mobile FCRAM family of 32Mbit and 64Mbit devices in May 2003, followed by a 128Mbit device in August 2003.

The Fujitsu MB82DBS08314A Ready for Users Requiring Large RAM
In addition to the new DDR burst Mobile FCRAM, Fujitsu also is introducing the MB82DBS08314A, which is compliant with the conventional COSMORAM Rev.3. This FCRAM provides an ideal solution for customers who need large RAM density with an existing SDR PSRAM interface.

Engineering samples will be available in January 2007, and volume production will begin in April 2007. Both devices are available in packages, as well as in chip and wafer form.

Main Specifications
Part Number MB82DDS08314A MB82DBS08314A
COSMORAM Revision Revision 4 Revision 3
Memory Density 256Mbit
Supply Voltage 1.7 to 1.95V
I/O Configuration x32-bit Address Data Multiplex Bus
Burst Frequency 135MHz 108MHz
Interface DDR SDR
Data Transfer Rate 1GBytes/s 400MBytes/s
Initial Access Time
(max) 45ns 70ns
Clock Access Time
(max) 6ns 7ns

About Fujitsu Microelectronics America, Inc.
Fujitsu Microelectronics America, Inc. (FMA) leads the industry in innovation. FMA provides high-quality, reliable semiconductor products and services for the networking, communications, automotive, security and other markets throughout North and South America. For more information please see or address e-mail to

Click here to download chip photos of the new MB82DDS08314A FCRAM relevant to this press release:

NOTE: FCRAM is a trademark of Fujitsu Limited. All other company and product names mentioned herein are trademarks or registered trademarks of their respective companies.

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