Press Release Summary:
Manufactured using InGaP HBT process technology, 2 GHz Model RF5602 features 32-34 dB small signal gain, integrated input power detector, and 3.3-5 V operation. Error vector magnitude performance is 2% at 26 dBm output power, 2% at 25 dBm, and 3% at 23.5 dBm. Optimized for use as final RF amplifier in 802.16 e/d and 802.11 b/g/n applications, device is also suited for 2.4 GHz ISM band applications, PCS communications systems, and WiBro 2.3-2.4 GHz applications.
Original Press Release:
RFMD® Introduces High Efficiency Linear Power Amplifier Designed for WiFi and WiMAX Applications
BOSTON, June 9, 2009 -- IEEE MTT-S -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today introduced the RF5602 high-power, high-efficiency and high-linearity power amplifier (PA). The RF5602 is a 2 GHz linear PA designed for medium power applications including consumer premises equipment (CPE) and access point (AP) applications for WiFi and WiMAX.
Rohan Houlden, general manager of RFMD's Wireless Connectivity business unit, said, "RFMD's expanding product portfolio for WiFi and WiMAX applications provides global customers the breadth and flexibility they require to accommodate the rapidly growing demand for wireless connectivity. The RF5602 leverages RFMD's PA leadership and design expertise to deliver high output power while meeting customer requirements for linearity and low current consumption, thus easing customer implementation of traditional power supply, transmit efficiency and thermal performance concerns."
Manufactured using RFMD's advanced Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT) semiconductor process technology, the RF5602 is optimized for use as the final RF amplifier in 802.16 e/d and 802.11 b/g/n applications. The RF5602 is also applicable for 2.4 GHz ISM band applications, PCS communications systems, and WiBro 2.3 GHz - 2.4 GHz applications.
The RF5602 provides strong linearity and delivers world-class error vector magnitude (EVM) performance.
-- 2% EVM at 26 dBm output power, 5.0V
-- 2% EVM at 25 dBm output power, 4.2V
-- 3% EVM at 23.5 dBm output power, 3.3V
Additional technical features include:
-- 3.3 to 5 V Supply Operation
-- Integrated input power detector on die
-- 32 dB to 34 dB small signal gain
RFMD is exhibiting at the IEEE MTT-S International Microwave Symposium 2009, June 9-11, at the Boston Convention and Exhibition Center, Boston, MA, in Booth 2412.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.