Fully Tested Power Amplifier IC is optimized for WiMAX.
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Press Release Summary:
Integrating 3-stage PA and power detector in 4 x 4 mm QFN package, RF5633 works from 5 V supply and is fully DC and RF tested. It delivers EVM of 2.5% with output power of 28 dBm from 3.4-3.6 GHz or 27 dBm from 3.6-3.8 GHz and features InGaP HBT semiconductor technology. External match enables tuning for output power over multiple bands, and bias may be controlled to accommodate 22 dB gain step. Other features include 34 dB gain as well as internal input and inter-stage matching.
Original Press Release:
RFMD® Introduces Fully Tested WiMAX Power Amplifier
ANAHEIM, Calif. -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the availability of the RF5633, a WiMAX 3.3 GHz - 3.8 GHz power amplifier IC. The RF5633 is optimized for WiMAX systems, however it can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, wireless infrastructure, and WiFi-based wireless high definition interface (WHDI) for wireless video distribution networks.
The RF5633 integrates a 3-stage PA and power detector in an industry-leading 4mm x 4mm QFN package, significantly minimizing design-in footprint requirements. Additionally, the RF5633 works from a standard 5V supply, eliminating the need for additional power supplies and enhancing ease of use for product development engineers. The RF5633 is also fully DC and RF tested, including EVM at the rated output power, maximizing application yields and accelerating time-to-market. The RF5633 features InGaP HBT semiconductor technology and is packaged in a leadless chip carrier with a backside ground.
The RF5633 delivers EVM of 2.5% with an output power of 28dBm in the 3.4 GHz - 3.6GHz frequency range, or 27dBm in the 3.6 - 3.8GHz frequency range. The bias of the PA may be controlled to accommodate a 22dB gain step to increase the dynamic range of the system. The RF5633 offers high gain of 34dB and high linear output power, with best-in-class efficiency. The RF5633 maintains linearity over a wide range of temperatures and power outputs while the external match enables tuning for output power over multiple bands. The RF5633 also features internal input and inter-stage matching, a power-down mode and power detection.
The RF5633 offers global customers a broadly applicable power amplifier IC featuring the powerful combination of industry-leading RF performance with best-in-class product size and superior ease of use.
Availability and Pricing
The RF5633 is immediately available in mass production quantities. Pricing is available upon request by contacting an RFMD sales representative or by visiting www.rfmd.com/purchase.
About RFMD
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
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RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.
RF Micro Devices, Inc.
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