Fairchild Semiconductor's MLP-Packaged MicroFET(TM) Products Deliver Superior Power Dissipation in a Small Form Factor
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Seven new products add to industry's broadest portfolio of MicroFET(TM) products targeting low-voltage applications
SAN JOSE, Calif.-May 29, 2007-Fairchild Semiconductor (NYSE: FCS) introduces seven new MicroFET(TM) products, adding to the industry's largest offering of small-form-factor devices that target low-voltage applications in the <30V and <20V ranges. By combining Fairchild's advanced PowerTrench® and packaging technologies in one device, the MicroFET offers performance and space advantages over conventional MOSFETs. The MicroFET's 2mm x 2mm x 0.8mm molded leadless package (MLP), for example, is 55 percent smaller and 20 percent lower in height than 3mm x 3mm x 1.1mm SSOT-6-packaged MOSFETs typically used in low-voltage designs. The MicroFET also provides excellent power dissipation and conduction loss characteristics compared to conventional MOSFETs in SC-70 packages. The combined benefits of compact packaging and high performance make MicroFET devices ideal for battery charging, load switching, boost and DC/DC conversion and many other low-power, space-constrained power-management applications.
"Fairchild's MicroFET products specifically address the ever-growing need for enhanced thermal performance required by ultra-compact, low-profile portable applications," said Chris Winkler, marketing director for Fairchild's Communication Products. "This introduction of seven devices in state-of-the-art packaging offers engineers an even wider selection of MicroFET products that save space while improving thermal and electrical performance in their low-voltage applications."
Four of the new MicroFET products, the FDMA1023PZ, FDMA520PZ, FDMA530PZ and FDMA1025P, offer various configurations that combine single and dual P-channel PowerTrench MOSFETs and ESD-protecting zener diodes. For additional system performance, the FDMA1023PZ offers guaranteed RDS(ON) ratings at gate voltages (VGS) as low as 1.5V. These devices are especially suited for charging and load-switching applications.
The other three products being introduced offer N- or P-channel MOSFET/Schottky diode combinations. The FDFMA2P029Z and FDFMA2P857 devices combine a P-channel MOSFET with a Schottky diode that is optimized for enhanced forward voltage (VF) and reversed leakage (IR) to maximize efficiency. These two devices are ideal for charging applications where reduced thermal resistance is critical. The third device, the FDFMA2N028Z, uses an N-channel MOSFET and Schottky diode combination, a configuration that is well-suited to boost applications.
These products are available in lead (Pb)-free packages that meet or exceed the requirements of the joint ICP/JEDEC standard J-STD-020C and are compliant with the European Union regulations now in effect.
Availability: Now
Delivery: 12 weeks ARO
Contact Information: To contact Fairchild about this product, please go to: www.fairchildsemi.com/cf/sales_contacts/.
For information on other products, design tools and sales contacts, please visit: www.fairchildsemi.com.
About Fairchild Semiconductor:
Fairchild Semiconductor (NYSE: FCS) is the global leader in power analog and power discrete technologies delivering energy-efficient solutions for all electronic systems. Recognized as The Power Franchise®, Fairchild provides leading-edge silicon and packaging technologies, manufacturing strength and system expertise. In 2007, Fairchild celebrates its "50/10" anniversary, commemorating 10 years as a new company and 50 years in the industry. Known as the "Father of Silicon Valley," Fairchild developed the planar transistor in 1958-and with it a new industry. Today, Fairchild is an application-driven, solution-based semiconductor supplier providing online design tools and design centers worldwide as part of its comprehensive Global Power Resource(TM). Please contact us on the web at www.fairchildsemi.com.
