Richardson RFPD, An Arrow Company

Communication Systems & Equipment

High-Power MMIC Amplifiers are fabricated using GaAs pHEMT process.

Suitable for test and measurement, EW, ECM and radar applications, High-Power MMIC Amplifiers are available in MAAP-011247-DIE (2 W) and MAAP-011248-DIE (1 W) models with 13.5 and 14 dB gain respectively. Operating from DC to 22 GHz, units are matched to 50 Ω across the band. Housed in 2.99 x 1.5 x 0.1 mm package, MAAP-011247-DIE provides 500 mA bias current at 15 V whereas MAAP-011248-DIE with...

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C3M0075120K SiC Power MOSFET provides 58 pF output capacitance.
Electronic Components & Devices

C3M0075120K SiC Power MOSFET provides 58 pF output capacitance.

Housed in four-lead TO-247-4 package with separate driver source pin, C3M0075120K C3M™ SiC Power MOSFET features 8 mm creepage distance between drain and source. Offering continuous drain current of 30.8 A and 1200 V drain source voltage, unit comes with 220 nC reverse-recovery charge and 18 ns reverse-recovery time. MOSFET provides 75 mΩ and 51 nC of Rds (on) total gate charge (Qg)...

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UltraCMOS® RF SOI Switches deliver IIP3 of +48 dBm linearity.
Electrical Equipment & Systems

UltraCMOS® RF SOI Switches deliver IIP3 of +48 dBm linearity.

Offering 8 nsec of switching time, UltraCMOS® RF SOI Switches are available in PE42525 and PE426525 models. Supporting 9 kHz to 60 GHz frequency range, units come with HaRP™ technology. Switches provide insertion loss of 1.3 dB, 1.7 dB, 1.9 dB and 2.9 dB and port to port isolation of 41 dB, 38 dB, 37 dB and 36 dB at 26.5 GHz, 45 GHz, 50 GHz and 60 GHz frequency respectively. PE42525 is used in...

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SCALE-iDriver™ Integrated Circuits feature short-circuit protection.
Electrical Equipment & Systems

SCALE-iDriver™ Integrated Circuits feature short-circuit protection.

Available in SID1132K, SID1152K, SID1182K models with 2.5 A, 5.0 A and 8.0 A peak output drive currents respectively, SCALE-iDriver™ Integrated Circuits come with IGBT and MOSFET driver in eSOP package. Suitable for 600 V, 650 V, 1200 V IGBT and MOSFET switches, units feature switching frequency of up to 250 kHz. Operated in -40°C to 125°C temperature range, product comes with 5 ns...

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Richardson RFPD Introduces Lineup of Power IGBTs in New VINco E3 Package from Vincotech
Electronic Components & Devices

Richardson RFPD Introduces Lineup of Power IGBTs in New VINco E3 Package from Vincotech

Low-profile package for motion control, solar and UPS applications March 28, 2017 – Geneva, Ill.: Richardson RFPD, Inc. announced today the availability from stock and full design support capabilities for a family of power IGBTs in the new VINco E3 package from Vincotech. The VINco E3 package features SLC (SoLid Cover) technology in an industry-standard lowprofile package. It enables engineers...

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Construction Equipment and Supplies

Richardson RFPD at APEC 2017

March 7, 2017 – Geneva, Ill.: Richardson RFPD, Inc. today announces its attendance and participation at the 2017 Applied Power Electronics Conference and Exposition (APEC). The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, including manufacturers,...

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