Richardson RFPD, An Arrow Company

GaN RF Transistor are CW and pulse capable.
Electronic Components & Devices

GaN RF Transistor are CW and pulse capable.

Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.

Read More »
TGM2635-CP Power Amplifier features copper base.
Communication Systems & Equipment

TGM2635-CP Power Amplifier features copper base.

Suitable for military, commercial X-band radar systems and satellite communications system application, TGM2635-CP Power Amplifier is designed in 10-lead 19.05 mm x 19.05 mm bolt down package. Providing 100 W saturated power with 22.5 dB signal gain, unit features DC blocked RF ports for system integration. Operating in 7.9 to 11 GHz frequency, unit offers VD = 28 V, IDQ = 1.3 A, VG = -2.6 V...

Read More »
GaAs MMIC Double Balanced Mixer requiring no matching circuitry.
Electronic Components & Devices

GaAs MMIC Double Balanced Mixer requiring no matching circuitry.

Applicable in point-to-point and point-to multipoint radios, VSAT, sensors and military end use, HMC557A and HMC773A GaAs MMIC Double Balanced Mixer uses optimized balun structures to provide good LO to RF and LO to IF isolation. Applied as up-converter or down-converter from 2.5GHz to 7.0GHz, HMC557A comes in 24-lead, ceramic 4mm x 4mm LCC package. HMC773A comes in 24-lead, ceramic 3mm x 3mm LCC...

Read More »
C3M0065100K MOSFETS provide notch between drain and source pins.
Electronic Components & Devices

C3M0065100K MOSFETS provide notch between drain and source pins.

With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at...

Read More »
High-Power SMT Attenuators have impedance at 50 ohms.
Electronic Components & Devices

High-Power SMT Attenuators have impedance at 50 ohms.

Sutable for applications requiring low noise, inductance and parasitic capacitance like military and aerospace fields, High-Power SMT Attenuators offer virtual flat loss over broad frequency spectrum. Product is stable over temperature and time with balanced Pi design for even current distribution and accurate attenuation from DC to 20GHz. Features Tantalum nitride resistors, attenuation of...

Read More »
Daughterboard Evaluation Kits for performance of GaN E-HEMTs.
Computer Hardware & Peripherals

Daughterboard Evaluation Kits for performance of GaN E-HEMTs.

Used for evaluating GaN E-HEMT performance half-bridge topology circuits, Daughterboard Evaluation Kits works for GS665MB-EVB universal motherboards and custom made system designs. Kits consists of 2 GaN Systems 650 V GaN E-HEMTs with half-bridge gate drivers, isolated power supplies and optional heatsink. Features uniform footprint and form factor, current shunt position for switching test and...

Read More »
UltraCMOS Image Reject Mixer features double-balanced high LO-RF isolation.
Electronic Components & Devices

UltraCMOS Image Reject Mixer features double-balanced high LO-RF isolation.

Operated with single-ended signals on the Radio Frequency (RF) and LO ports, PE41901 Image Reject Mixer can be used as either upconverter or downconverter. Reducing LO leakage by including LO path 90° coupler and RF port baluns on single die, unit improves LO-RF isolation. Manufactured on UltraCMOS process, product is suitable for Ku-band earth terminals like Very Small Aperture Terminal block...

Read More »

All Topics