Richardson RFPD, An Arrow Company

AFT31150N RF Power LDMOS Transistor offers 2700-3100 MHz operating range.
Electronic Components & Devices

AFT31150N RF Power LDMOS Transistor offers 2700-3100 MHz operating range.

AFT31150N RF Power LDMOS Transistor is suitable for applications operating in 2700–3100 MHz frequency range such as S-band radar systems, maritime radar and weather radar applications. Having a thermal resistance of 0.042 °C/W and P1dB of +51.8 dBm, unit provides a power gain of 17.0 dB at 3100 MHz with an efficiency of 50%. Product is tested to operate up to a maximum of 32 VDD operations and...

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HMC8205BF10 Power Amplifier is integrated with DC blocking capacitors.
Communication Systems & Equipment

HMC8205BF10 Power Amplifier is integrated with DC blocking capacitors.

HMC8205BF10 GaN Power Amplifier is suitable for military jammers, wireless infrastructure and radar applications. Units deliver +45.5 dBm with 35% PAE across 0.3 GHz to 6 GHz bandwidth. Amplifier feature 28 dB of small signal gain, 20 dB of power gain for Psat and gain flatness of ± 2 dB. Product is operated on 50 V of supply voltage at 1300 mA and comes in 10-lead LDCC package.

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RF Power LDMOS Transistor handles VSWR of more than 20:1.
Electronic Components & Devices

RF Power LDMOS Transistor handles VSWR of more than 20:1.

Available in AFV10700H / AFV10700HS models in bolt-down and solder-down styles, RF Power LDMOS Transistor is housed in NI-780 air cavity package. Operating in 960-1215 MHz frequencies, unit is suitable for defense and commercial pulse applications such as friend or foe (IFF), secondary surveillance radars and ADS-B transponders. Transistor offers a power density of 700 W in 1.3 x 2.6 in. 50-ohm...

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MAAL-011139 Amplifier provides a gain of 21.5 dB flat gain.
Communication Systems & Equipment

MAAL-011139 Amplifier provides a gain of 21.5 dB flat gain.

MAAL-011139 Low Noise Amplifier is used as input stage for fiber-to-the-home (FTTH) and 75 Ω infrastructure applications. Biased from 3 to 5 V, amplifier supports both upstream (5-204 MHz) and downstream (45-1218 MHz) CATV operation. With 1 dB and 1.5 dB of noise figure in 75 Ω CATV, 5–1218 MHz and 50 Ω system, 5-2000 MHz respectively, unit provides adjustable 20-85 mA current and return...

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RF Power LDMOS Transistor offers thermal resistance of 0.15º C/W.
Electronic Components & Devices

RF Power LDMOS Transistor offers thermal resistance of 0.15º C/W.

RF Power LDMOS Transistor is offered in MRF13750H/ MRF13750HS in bolt-down and solder-down styles. Suitable for applications such as 915 MHz industrial heating and welding systems and 1300 MHz particle accelerators, unit supports full dynamic range from 0 to 750 W. Housed in NI-1230 air-cavity ceramic package, transistor can handle a VSWR of 10:1. Product is internally input-matched and delivers...

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BMOD0189P051B2A 51 V Module is equipped with heat sinks.
Controls & Controllers

BMOD0189P051B2A 51 V Module is equipped with heat sinks.

BMOD0189P051B2A 51 V Module comes with integrated fan and provides active balancing. Suitable for hybrid vehicles, rail, heavy industrial equipment and UPS system applications, product offers redundant over-voltage alarm. Unit features advanced capacitor management system and 2.85 V cell technology. Module is compliant with shock (IEC 60068-2-27 and 2-29) and vibration (ISO 16750-3, Tables 12 and...

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