Richardson RFPD, An Arrow Company

Latest R-REF01-HB Reference Design Offers Isolated Power Supplies for Low and High Side Switching Transistors
Electrical Equipment & Systems

Latest R-REF01-HB Reference Design Offers Isolated Power Supplies for Low and High Side Switching Transistors

Richardson RFPD, Inc. has launched R-REF01-HB, a half-bridge gate drive power supply reference design with 2.5 kV continuous input-to-output isolation and high gate drive currents. It is configurable with various topologies such as LLC half-bridge, asymmetric duty cycle half-bridge, full-bridge and 3-phase B6 bridge. The product features 15 V to 42 V supply, shoot-through protection and...

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New Buck Converter Evaluation Board Features Universal GaN Half-Bridge with Open Loop Control
Architectural & Civil Engineering Products

New Buck Converter Evaluation Board Features Universal GaN Half-Bridge with Open Loop Control

Richardson’s GS61008P-EVBHF Buck Converter Evaluation Board is embedded with GS61008P E-Mode GaN transistor and a PE29101 gate driver. The board is used to evaluate GaN systems and is suitable for applications such as DC–DC conversion, AC–DC conversion, wireless power charging, and LiDAR. Having switching times of less than 1 ns, PE29101 driver is capable of up to 40 MHz. Unit comes with...

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Communication Systems & Equipment

1205/BBM3K5OEL Power Amplifier Features Built-In Protection Circuits

Richardson’s 1205/BBM3K5OEL Solid State Power Amplifier offers 500–2700 MHz operating frequency range with operating voltage of 28 V and power output CW of 30 W. Having small signal gain of 48 dB and signal gain flatness of ±1.0 dB, the unit comes in 6.0 x 3.0 x 1.0 in. dimensions. These amplifiers are suitable for broadband mobile jamming, communications and bench test applications and...

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IMS Evaluation Platform features low thermal resistance.
Architectural & Civil Engineering Products

IMS Evaluation Platform features low thermal resistance.

Insulated Metal Substrate Evaluation Platform consists of GSP65MB-EVB motherboard and two IMS evaluation modules. The motherboard is available in two power levels 3 kW (GSP65R25HB-EVB) and the 6 kW (GSP65R13HB-EVB) whereas the evaluation modules can be configured as half-bridge or a full-bridge on motherboard. Module comes with GaN E-HEMTs, gate drivers, isolated DC/DC supply and decoupling...

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AFT31150N RF Power LDMOS Transistor offers 2700-3100 MHz operating range.
Electronic Components & Devices

AFT31150N RF Power LDMOS Transistor offers 2700-3100 MHz operating range.

AFT31150N RF Power LDMOS Transistor is suitable for applications operating in 2700–3100 MHz frequency range such as S-band radar systems, maritime radar and weather radar applications. Having a thermal resistance of 0.042 °C/W and P1dB of +51.8 dBm, unit provides a power gain of 17.0 dB at 3100 MHz with an efficiency of 50%. Product is tested to operate up to a maximum of 32 VDD operations and...

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HMC8205BF10 Power Amplifier is integrated with DC blocking capacitors.
Communication Systems & Equipment

HMC8205BF10 Power Amplifier is integrated with DC blocking capacitors.

HMC8205BF10 GaN Power Amplifier is suitable for military jammers, wireless infrastructure and radar applications. Units deliver +45.5 dBm with 35% PAE across 0.3 GHz to 6 GHz bandwidth. Amplifier feature 28 dB of small signal gain, 20 dB of power gain for Psat and gain flatness of ± 2 dB. Product is operated on 50 V of supply voltage at 1300 mA and comes in 10-lead LDCC package.

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