Company News

Richardson RFPD, An Arrow Company

1950 S Batavia Ave., Suite 100, Geneva, IL, 60134, USA

  • 800-737-6937

Latest New Product News from
Richardson RFPD, An Arrow Company

Electronic Components & Devices

SiC Power MOSFETs are housed in TO-263-7L surface mount package.

Jul 01, 2017

Available in C3M0065100J (65 mΩ) and C3M0120100J (120 mΩ) configurations with output capacitance of 60 pF and 40 pF respectively, Silicon Carbide Power MOSFETs are suitable for renewable energy, EV battery charging, HV DC/DC converters, and switch mode power supplies applications. Featuring C3M™ technology and N-channel enhancement mode, units offer reverse recovery time of 14 ns... Read More

Communication Systems & Equipment

ADF4356 Wideband Synthesizer feature RF output mute function.

Jun 22, 2017

Suitable for wireless infrastructure, microwave point-to-point links, electronic test and measurement, and satellite terminals applications, 6.8 GHz ADF4356 Wideband Synthesizer is integrated with VCO that provides an output ranging from 3400 MHz to 6800 MHz. Operating at -40°C to +85°C temperature range with 3.3 V analog and digital power, units deliver phase noise of -113 dBc/Hz at 100 kHz... Read More

Electronic Components & Devices

RF Power GaN Transistor is housed in NI-360H-2SB ceramic flanged package.

Jun 17, 2017

Operating from 1 MHz to 2700 MHz frequency with +50 Vdc voltage, AFG24S100HR5 RF Power GaN Transistor is suitable for CW, pulse and wideband RF applications such as public mobile radios, ISM and wireless cellular infrastructure. Delivering gain of 16.0 dB CW, 18.0 dB pulse with 64.2% CW, 66.8% pulse efficiency in 2500 MHz narrowband test circuit, unit offers thermal resistance of 0.86ºC/W and... Read More

Controls & Controllers

RF Front-End Module offers less than 800 ns switching time.

Jun 03, 2017

Designed for ZigBee, thermostats, lighting, sensors, range extenders and Thread and Bluetooth Smart applications, SKY66112-11 RF Front-End Module is operated in 2400–2483 MHz frequency range with 1.8 V to 3.6 V supply voltage. Featuring single-ended transmit/receive interface and < 1 μA sleep mode current, unit is housed in 3.5 mm x 3.0 mm x 1.0 mm MCM package. Module provides an integrated... Read More

Controls & Controllers

Phase and Amplitude Controller provides 6-bit attenuation.

May 20, 2017

Consisting of digital step attenuator, phase shifter and RX/TX switching, PE19601 Monolithic Phase and Amplitude Controller is designed for electronically scanned array weather and military radar applications. Having +17 dBm up to 12 GHz maximum power handling capacity and covering 31.5 dB attenuation range in 0.5 dB steps, unit offers serial interface for controlling attenuation. With +40 dBm... Read More

Electronic Components & Devices

HMC-C582 Power Amplifier offers gain flatness of ±1.5 dB.

May 12, 2017

Housed in hermetic 1.75 x 1.62 x 0.525 in. module with replaceable SMA connectors, HMC-C582 GaAs MMIC pHEMT Power Amplifier is operated between 0.01 GHz and 20 GHz. Providing 24 dB of gain, up to 36 dBm output IP3 and 26 dBm output power at 1 dB gain compression, unit’s inputs and outputs are matched to 50 Ω. Suitable for electronic warfare, electronic countermeasures, radar and fiber optic... Read More

Electronic Components & Devices

SAX239 Tunable Bandpass Filter offers tuning speed of 40 µs.

May 09, 2017

Featuring low insertion loss <4.5 dB and fast-tuning across the band to 1.0 MHz resolution, SAX239 Tunable Bandpass Filter consumes less than 100 mW DC power. With serial tuning control, unit comes in 1.2 x 1.2 x 0.25 in. size. Offering step sizes of 1.0 MHz in 30–88 MHz or 2.0 MHz in 90–520 MHz range, product is suitable for tactical communication applications and jet fighter. Units... Read More

Communication Systems & Equipment, Electronic Components & Devices

High-Power MMIC Amplifiers are fabricated using GaAs pHEMT process.

May 03, 2017

Suitable for test and measurement, EW, ECM and radar applications, High-Power MMIC Amplifiers are available in MAAP-011247-DIE (2 W) and MAAP-011248-DIE (1 W) models with 13.5 and 14 dB gain respectively. Operating from DC to 22 GHz, units are matched to 50 Ω across the band. Housed in 2.99 x 1.5 x 0.1 mm package, MAAP-011247-DIE provides 500 mA bias current at 15 V whereas MAAP-011248-DIE... Read More

Electronic Components & Devices

C3M0075120K SiC Power MOSFET provides 58 pF output capacitance.

Apr 25, 2017

Housed in four-lead TO-247-4 package with separate driver source pin, C3M0075120K C3M™ SiC Power MOSFET features 8 mm creepage distance between drain and source. Offering continuous drain current of 30.8 A and 1200 V drain source voltage, unit comes with 220 nC reverse-recovery charge and 18 ns reverse-recovery time. MOSFET provides 75 mΩ and 51 nC of Rds (on) total gate charge (Qg)... Read More

Communication Systems & Equipment, Electrical Equipment & Systems

UltraCMOS® RF SOI Switches deliver IIP3 of +48 dBm linearity.

Apr 21, 2017

Offering 8 nsec of switching time, UltraCMOS® RF SOI Switches are available in PE42525 and PE426525 models. Supporting 9 kHz to 60 GHz frequency range, units come with HaRP™ technology. Switches provide insertion loss of 1.3 dB, 1.7 dB, 1.9 dB and 2.9 dB and port to port isolation of 41 dB, 38 dB, 37 dB and 36 dB at 26.5 GHz, 45 GHz, 50 GHz and 60 GHz frequency respectively. PE42525 is used... Read More

Electronic Components & Devices

Airfast™ RF LDMOS Transistor is designed for two-way radio applications.

Apr 14, 2017

Suitable for large-signal and common-source amplifier applications, AFM906NT1 Airfast™ RF LDMOS Transistor is operated in 136 to 941 MHz frequency with 7.5 V of supply voltage. Featuring 20.3 dB power gain at 520 MHz, unit offers +37.8 dBm of P1dB and 6.8 W output power. Product offers 70.8 % efficiency.

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Electronic Components & Devices

SCALE-iDriver™ Integrated Circuits feature short-circuit protection.

Apr 03, 2017

Available in SID1132K, SID1152K, SID1182K models with 2.5 A, 5.0 A and 8.0 A peak output drive currents respectively, SCALE-iDriver™ Integrated Circuits come with IGBT and MOSFET driver in eSOP package. Suitable for 600 V, 650 V, 1200 V IGBT and MOSFET switches, units feature switching frequency of up to 250 kHz. Operated in -40°C to 125°C temperature range, product comes with 5 ns... Read More

Computer Hardware & Peripherals

WP8548 3G Cellular Module comes with AT and T carrier approval.

Mar 29, 2017

Offering B1, B2, B5, B6, B8, B19 of 3G UMTS/HSPA frequency bands and 850, 900, 1800, 1900 of 2G EDGE/GSM/GPRS frequency bands, WP8548 3G Cellular Module comes with CE, FCC, PTCRB, GCF, IC, JRF/JPA, NCC approvals. Units are used for sending valuable data to cloud.

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Communication Systems & Equipment

mXTEND™ SMT Multiband Antennas feature fractal geometry design.

Feb 16, 2017

Available in FR01-S4-250 (5.0 x 5.0 x 5.0 mm), FR01-S4-232 (10.0 x 3.2 x 3.2 mm), FR01-S4-224 (12.0 x 2.4 x 3.0mm) and FR01-S4-224 (24.0 x 12.0 x 2.0mm) space saving designs, mXTEND™ SMT Multiband Antennas are operated in 698-2690 frequency range. Offering multiband performance in wireless/mobile devices, units are designed with miniature, standard, off-the-shelf components.

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Test & Measuring Instruments

CRD-060DD17P-2 Demonstration Board comes with active start-up circuit.

Feb 13, 2017

Reducing start-up loss, CRD-060DD17P-2 Demonstration Board is operated in 300 V to 1000 V input voltage range. Delivering 48W of power, unit is designed with 1700 V SiC MOSFET. Suitable in auxiliary power supplies and switch mode power supplies, CRD-060DD17P-2 uses ultra-low drain gate capacitive C2M1000170J power transistor.

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Electronic Components & Devices

SAX248 Tunable Bandpass Filter offers 35 µs tuning speed.

Jan 21, 2017

Suitable for tactical communications applications, SAX248 Tunable Bandpass Filter is operated with 3.3 V supply and consumes < 80 mW DC power. Delivering 3.5% typical, 5% max bandpass bandwidth, 1.5:1 typical VSWR, unit comes in 1.2 x 0.65 x 0.25 in. package. Offering +33 dBm of P1dB and insertion loss of less than 4.5 dB with 0.5 MHz step size, product comes with evaluation board.

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Electronic Components & Devices

GaN RF Transistor are CW and pulse capable.

Jan 16, 2017

Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.

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Electronic Components & Devices

TGM2635-CP Power Amplifier features copper base.

Dec 16, 2016

Suitable for military, commercial X-band radar systems and satellite communications system application, TGM2635-CP Power Amplifier is designed in 10-lead 19.05 mm x 19.05 mm bolt down package. Providing 100 W saturated power with 22.5 dB signal gain, unit features DC blocked RF ports for system integration. Operating in 7.9 to 11 GHz frequency, unit offers VD = 28 V, IDQ = 1.3 A, VG = -2.6 V... Read More

Materials & Material Processing

GaAs MMIC Double Balanced Mixer requiring no matching circuitry.

Dec 09, 2016

Applicable in point-to-point and point-to multipoint radios, VSAT, sensors and military end use, HMC557A and HMC773A GaAs MMIC Double Balanced Mixer uses optimized balun structures to provide good LO to RF and LO to IF isolation. Applied as up-converter or down-converter from 2.5GHz to 7.0GHz, HMC557A comes in 24-lead, ceramic 4mm x 4mm LCC package. HMC773A comes in 24-lead, ceramic 3mm x 3mm... Read More

Electronic Components & Devices

C3M0065100K MOSFETS provide notch between drain and source pins.

Dec 02, 2016

With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at... Read More