Microsemi Corporation

IGBT Modules come in compact SP3 packages.
Controls & Controllers

IGBT Modules come in compact SP3 packages.

Designed for motor control applications, power modules feature 3-phase IGBT bridge using NPT IGBTs for 20-50 kHz frequency applications and Trench Field Stop IGBTs for 5-20 kHz applications. Current ratings are in range of 30-50 A for 600 V and 15-25 A for 1,200 V NPT IGBTs and 20-75 A for 600 V and 25-35 A for 1,200 V Trench Field Stop IGBTs. Units have 12 mm profile and 40.8 x 73.4 mm...

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Power Modules replace transistors in radar applications.
Controls & Controllers

Power Modules replace transistors in radar applications.

Operating at 800, 700, and 550 W, respectively, Models 1214-800P, 1214-700P1, and 1214-550P Power Solution Modules can be used to replace up to four 220 W transistors in high power L-Band pulsed radar applications. Plug and play capable, Class C modules feature 1,200-1,400 MHz frequency coverage, 300 Â-µs medium pulse format, 8 db/min high power gain, 50% collector efficiency and 50 W in, 50...

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MOSFETs/FREDFETs suit high-power switch mode applications.

POWER MOS 8(TM) MOSFETs and FREDFETs simplify filtering and paralleling of multiple devices. Featuring RoHS-compliant construction, devices are avalanche energy-rated and exhibit oscillation immunity. MOS 8 FREDFETs have all features of MOS 8 MOSFETs and add faster body diode recovery speed of less than 250 ns. There are 10 MOSFET and 5 FREDFET devices with power ratings from 19-75 A and voltage...

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RF Power Products operate at frequencies up to 30 MHz.
Construction Equipment and Supplies

RF Power Products operate at frequencies up to 30 MHz.

Designed for Class C, D, and E applications operating from 1-30 MHz, flangeless-packaged RF MOSFET Power Products feature 250 V operation and 600 W continuous wave output power. Model DRF100 RF Driver IC has 8 A output for driving 500-1,200 V RF MOSFETs. Model DRF1200 is comprised of DRF100 RF driver IC along with 1,000 V RF MOSFET output. Coplanar lead arrangement facilitates circuit layout and...

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Pulsed Power Transistor targets avionics applications.
Electronic Components & Devices

Pulsed Power Transistor targets avionics applications.

Providing 500 W of output power, extended length messaging Model MDS 500L offers 55% collector efficiency and 3:1 load mismatch tolerance for Mode-S applications in 1,030-1,090 MHz frequency range. Pulsing is rated at 32 Â-µsec ON/18 µsec OFF x 48 repeated at 23 msec. Performance is based on bipolar silicon chip design that also provides max fast rise time of 80 nsec and Vcc of 50 V....

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Pulse Transistor suits S-band radar applications.
Electronic Components & Devices

Pulse Transistor suits S-band radar applications.

Housed in hermetically sealed package, class C Model 2731-100M provides 100 W peak power, 40% collector efficiency, and 8.0 dB power gain flatness. Unit performs over 2.7-3.1 GHz frequency range with 250 Â-µs pulse width and 10% duty cycle. Providing VSWR 2:1 load mismatch and Vcc of +36 V, transistor is suited for air traffic control and military radar applications.

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Electronic Components & Devices

Microsemi to Demo Silicon Carbide Technology at 2006 IEEE MTT-S International Symposium

IRVINE, Calif., June 8, 2006 (PRIMEZONE) - Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors, is featuring a next-generation Wide Band Gap Silicon Carbide technologydemonstration at the 2006 IEEE MTT-S International Microwave Symposium and Exhibition in San Francisco's Moscone Center,...

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Communication Systems & Equipment

Microsemi RF/Microwave Technology on Display at 2006 IEEE MTT-S International Symposium

IRVINE, Calif., June 8, 2006 (PRIMEZONE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors, is displaying its latest microwave and RF power products and wireless LAN power amplifiers at the 2006 IEEE MTT-S International Microwave Symposium and Exhibition in San Francisco's Moscone...

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