Product News: Electronic Components & Devices
SiC Schottky Diodes improve electrical power conversion.
Press Release Summary:
November 28, 2012 - Targeting high-power, high-voltage, industrial applications, 1,200 V Schottky diodes are based on SiC material and technology. This increases breakdown field strength and thermal conductivity, attributes which let designers create devices with optimized characteristics encompassing zero reverse recovery, temperature independent behavior, and voltage capability. Offered in SMT backside solderable D(3), common cathode TO-247, and YO-247 packages, diodes come in 10, 20, and 30 A ratings.
Original Press Release
Microsemi's New SiC Schottky Diodes Improve Electrical Power Conversion Efficiency
Press release date: November 15, 2012
ALISO VIEJO, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today introduced a new family of 1200 volt (V) Schottky diodes based on silicon carbide (SiC) material and technology. The new diodes are targeted at a wide range of industrial applications including solar inverters, welding, plasma cutters, fast vehicle charging, oil exploration, and other high power, high voltage applications where power density, higher performance and reliability are important.
SiC offers a number of benefits compared to silicon material (Si) including a higher breakdown field strength and improved thermal conductivity. These attributes allow designers to create devices with better performance characteristics encompassing zero reverse recovery, temperature independent behavior, higher voltage capability, and higher temperature operation to achieve new levels of performance, efficiency and reliability.
In addition to the inherent benefits of the device, Microsemi is the only manufacturer to offer a SiC Schottky diode in a large surface mount backside solderable D(3 )package allowing designers to achieve increased power density and lower manufacturing costs.
"We applied our more than 25 years of power semiconductor device design and manufacturing know-how to deliver a family of SiC diodes that offers unparalleled levels of performance, reliability and overall quality," said Russell Crecraft, general manager of Microsemi's Power Products Group. "Next-generation power conversion systems require higher power densities, higher operating frequencies and higher efficiencies--and our new silicon carbide devices help system designers meet those needs."
The new 1200V SiC Schottky diode product portfolio includes:
-- APT10SCD120BCT (1200V, 10A, common cathode TO-247 package)
-- APT20SCD120B (1200V, 20A, TO-247 package)
-- APT30SCD120B (1200V, 30A, TO-247 package)
-- APT20SCD120S (1200V, 20A, D(3) package)
-- APT30SCD120S (1200V, 30A, D(3 )package) Microsemi's new SiC Schottky diodes are in production now.
For more information, or to obtain a sample, please contact your local distributor or Microsemi sales representative.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.
CONTACT: Gwen Carlson, Director of Corporate Communications, +1-949-380-6135, Beth P. Quezada, Communications Specialist, +1-949-380-6102, firstname.lastname@example.org