SiC Schottky Diodes serve high-power industrial applications.
October 23, 2013 -
Silicon carbide (SiC) Schottky diodes exhibit breakdown field strength and thermal conductivity that let designers create products with optimized performance characteristics: zero reverse recovery, temperature-independent behavior, high-voltage capability, and high-temperature operation. Diodes include APT10SCD65K (650V, 10A, TO-220 package), APT10SCD65KCT (650V, 10A, common cathode TO-220 package), APT20SCD65K (650V, 20A, TO-220 package), and APT30SCD65B (650V, 30A, TO-247 package).
|Original Press Release |
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Irvine, CA, 92614
Microsemi's New 650V Silicon Carbide Schottky Solution Improves System Performance in High-Power Industrial Applications
New Devices Enable System Efficiency Improvements in a Compact Footprint
ALISO VIEJO, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today expanded its silicon carbide (SiC) Schottky product family with a new line of 650 volt (V) solutions. The new diodes are targeted at high-power industrial applications including solar inverters.
Wide bandgap semiconductors such as SiC feature the most advanced material that is being considered by many power electronics and systems designers in their new designs. SiC offers a number of benefits compared to silicon material including a higher breakdown field strength and higher thermal conductivity. These attributes allow designers to create products with better performance characteristics encompassing zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.
"Microsemi's SiC power semiconductors are ideal for power electronic designers looking to improve system efficiency," said James Kerr, senior product marketing manager for Microsemi's Power Products Group. "Silicon carbide is a game-changing technology for many of our customers. With in-house fabrication capabilities, a comprehensive portfolio of SiC solutions and a roadmap that includes several new SiC products, Microsemi is positioned to capitalize on this growing market opportunity."
Microsemi's new 650V SiC Schottky diode product portfolio includes:
-- APT10SCD65K (650V, 10A, TO-220 package)
-- APT10SCD65KCT (650V, 10A, common cathode TO-220 package)
-- APT20SCD65K (650V, 20A, TO-220 package)
-- APT30SCD65B (650V, 30A, TO-247 package)
These new solutions are also used in the company's power modules, which are used in aerospace, welding, battery charging and other high-power industrial applications.
Microsemi's new 650V SiC Schottky diodes are in production now. For more information, or to obtain a sample, please contact your local distributor or Microsemi sales representative, or email firstname.lastname@example.org and reference "SiC" in the subject line.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
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