Schottky Diodes offer 100 or 200 mA forward current ratings.
August 27, 2009 -
Housed in 0201 DSN2 chip level package measuring 0.6 x 0.3 x 0.3 mm, 30 V NSR0xF30NXT5G Series is optimized for low forward voltage drop of 370 mV at 10 mA, while NSR0xL30NXT5G Series is designed for low reverse current of 2.0 µA at 10 V reverse voltage. Solderable metal contacts under package enable 100% utilization of package area. Operating from -40 to +125°, RoHS-compliant devices are suited for mobile handsets, MP3 players, and digital cameras.
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Original Press release
ON Semiconductor, LLC
5005 E. McDowell Rd.
Phoenix, AZ, 85008
USA
ON Semiconductor Introduces Industry's Smallest Packaged, Best Space Performance Schottky Barrier Diodes for Portable Applications
New chip-level packaged Schottky diodes achieve 100 percent space utilization and offer best-in-class electrical performance
Phoenix, Ariz. - August 19, 2009 - ON Semiconductor (Nasdaq: ONNN), a leading global supplier of high performance, energy efficient, silicon solutions, has introduced four new 30 volt (V) Schottky barrier diodes. Housed in an ultra-small 0201 Dual Silicon No-lead (DSN2) chip level package, the new Schottky barrier diodes offer portable electronics designers both the industry's smallest Schottky diode and best-in-class space-performance.
These new Schottky diodes are available with low forward voltage or low reverse current at forward current ratings of either 100 milliamp (mA) or 200 mA - the latter being the industry's smallest 200 mA rated parts. The new devices provide an ideal solution for the increasing number of applications where board space is restricted such as mobile handsets, MP3 players and digital cameras.
"By combining industry-leading performance in small, space-saving packages, ON Semiconductor has once again demonstrated both our technical capability and understanding of our customers' needs," said Dan Huettl, director and general manager of ON Semiconductor's Small Signal and Transistor Group. "As the growth and evolution of the portable equipment market continues at a rapid pace, it is important that we - as a leading manufacturer of discrete components - keep pace to assist our customers in bringing exciting new products to market as quickly as possible."
The Devices
The Schottky diodes feature solderable metal contacts under the package that enable 100 percent utilization of the package area for active silicon. The new 0201 DSN-2 package - which measures a mere 0.6 mm x 0.3 mm x 0.3 mm - provides a three times the board space savings compared to the popular SOD-923 (also known as 0402) which measures 1.0 mm x 0.6 mm x 0.4 mm. Providing the lowest leakage currents on the market, the news devices help designers address power losses, efficiency and switching speeds. The new Schottky diodes have a significant performance per board area advantage versus competing parts housed in traditional plastic molded packages. Class-leading power management characteristics also serve to help to prolong battery life in portable equipment applications.
The NSR0xF30NXT5G series devices are optimized for low forward voltage drop (Vf), 370 millivolts (mV) at 10 mA, which further reinforces the advanced, high-performance specification of the series. The NSR0xL30NXT5G series devices are designed for low reverse current (Ir), 2.0 microamps (µA) at 10 V reverse voltage and offer very low leakage, extending battery life. With ESD ratings of Human Body Model: Class 3B and Machine Model: Class C coupled with low thermal resistance the two series help support design engineers challenged with incorporating ever-increasing amounts of circuitry into small spaces.
The Schottky diodes are RoHS compliant and have an operating temperature range of -40°C to +125°C, making them suitable for use in equipment that is used in harsh indoor and outdoor environments. The introduction of the new devices in the DSN2 housing underlines ON Semiconductor's technical capabilities and the expansion of its product range into space-efficient chip level packages that meet the latest customer requirements.
DEVICES Vf(V) If (mA) Pkg Features
NSR01F30NXT5G 30 100 DSN2 0201 Low Vf
NSR02F30NXT5G 30 200 DSN2 0201 Low Vf
NSR01L30NXT5G 30 100 DSN2 0201 Low Ir
NSR02L30NXT5G 30 200 DSN2 0201 Low Ir
For additional technical information contact Edwin Romero at Edwin.Romero@onsemi.com or visit http://www.onsemi.com
About ON Semiconductor
With its global logistics network and strong product portfolio, ON Semiconductor (Nasdaq: ONNN) is a preferred supplier of high performance, energy efficient, silicon solutions to customers in the power supply, automotive, communication, computer, consumer, medical, industrial, mobile phone, and military/aerospace markets. The company's broad portfolio includes power, analog, DSP, mixed-signal, advance logic, clock management, non-volatile memory and standard component devices. Global corporate headquarters are located in Phoenix, Arizona. The company operates a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit http://www.onsemi.com.
ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein.
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