MOSFETs suit high-frequency switching applications.
October 30, 2002 - PowerTrench® 100/150 V MOSFETs come in SO-8 packages and offer low total gate charge. They are effective in conventional and high-density isolated DC/DC power supplies. Typical applications include telecom brick designs, which are optimized by using 100 V MOSFET in half- or full-bridge topologies, and 150 V MOSFET in forward topologies. Range of MOSFETs provides choice of RDS(on) vs gate charge trade-offs to benefit each application's operating conditions.
New 100V and 150V SO-8 MOSFETs Set New Efficiency Standards in DC/DC Conversion Applications
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Fairchild Semiconductor Corp.
82 Running Hill Rd.
South Portland, ME, 4106
Press release date: October 11, 2002
San Jose, Calif.-October 11, 2002- Fairchild Semiconductor International (NYSE: FCS) introduces the first six products in a new family of medium-voltage, PowerTrench® MOSFETs in SO-8 packages tailored specifically for applications requiring efficient, high-frequency switching. The flagship products offer not only the lowest total gate charge and Miller charge essential for fast switching, they also have the lowest RDS(on) in their class. For example, the FDS3672 has 12% lower RDS(on)max and 35% lower Miller charge than the closest competitor. This very versatile technology is avalanche-rated and extensively tested. The new 100/150V MOSFETs are especially effective in both conventional and high-density isolated DC/DC power supplies for communications and industrial markets.
Typical applications for these products include popular telecom brick designs, which are optimized by using the 100V MOSFET in half- or full-bridge topologies, and the 150V MOSFET in forward topologies. This range of 100V (FDS3672, FDS3682, FDS3692, FDS3992) and 150V (FDS2572, FDS2582) MOSFETs provides a choice of RDS(on) vs. gate charge trade-offs to benefit each application's particular operating conditions.
To further improve switching characteristics in power supply designs, the internal gate resistance of the new MOSFETs is greatly reduced, allowing the benefits of the low gate charge to be realized. Low gate resistance and careful tuning of the gate-to-source and Miller capacitances is important for limiting the effects of potentially destructive drain-to-gate coupling that occurs during fast voltage transitions on the MOSFET drain.
"By offering the lowest RDS(on) and the lowest gate charge, these products are the industry's best SO-8-packaged, 100V and 150V MOSFETs," said David Grey, Fairchild's Technical Marketing Manager. "They have the optimal combination of characteristics for DC/DC power supply designs and have been evaluated in a number of common topologies for efficiency gains over previous technologies. These MOSFETs are complementary to Fairchild's PWM controllers, enabling design of complete isolated and non-isolated power supplies."
Availability: Samples and production quantities are available now
Delivery: 8 weeks ARO
For more information, contact Fairchiild Semiconductor's Customer Support Center at (888) 522-5372, fax (972) 910-8036, or visit Fairchild's website at www.fairchildsemi.com.
Datasheets of these products in PDF format are available at: http://www.fairchildsemi.com/pf/FD/FDS2572.html
Fairchild Semiconductor International:
Fairchild Semiconductor International (NYSE: FCS) is a leading global supplier of high performance products for multiple end markets. With a focus on developing leading edge power and interface solutions to enable the electronics of today and tomorrow, Fairchild's components are used in computing, communications, consumer, industrial and automotive applications. Fairchild's 10,000 employees design, manufacture and market power, analog & mixed signal, interface, logic, and optoelectronics products from its headquarters in South Portland, Maine, USA and numerous locations around the world. Please contact us on the web at www.fairchildsemi.com.