Embedded 0.18 µm BCD Process supports 12-30 V power applications.
September 6, 2013 -
Supporting 12–30 V range, 0.18 µm embedded Bipolar-CMOS-DMOS (eBCD) technology features BCD high-voltage power devices embedded in 0.18 µm standard logic process. Solution is fully compatible with standard CMOS processes and uses high density logic devices (1.8 V) and high performance analog devices (5 V) with low flicker noise. Traits make process suited for PMICs, DC/DC converters and regulators, low-distortion audio amplifiers, and battery management ICs for mobile/consumer markets.
|Original Press Release |
1, Hyangjeong-dong, Hungduk-gu
MagnaChip to Offer Premium 0.18um Embedded BCD Process
SEOUL, South Korea and CUPERTINO, Calif. -- MagnaChip Semiconductor Corporation ("MagnaChip Semiconductor") (NYSE: MX), a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products, today announced that it now offers a new 0.18um embedded Bipolar-CMOS-DMOS (eBCD) technology. This new process features BCD high voltage power devices embedded into a 0.18um standard logic process. The advantages of this new BCD process include minimal mask additions and support of high voltage ranges (12V~30V), which make the process well suited for applications such as PMICs, DC-DC converters and regulators, low-distortion audio amplifiers, and battery management ICs for the mobile and consumer markets.
This new BCD process is fully compatible with standard CMOS processes and uses high density logic devices (1.8V) and high performance analog devices (5V) with industry-leading low flicker noise. This process will support premium features available on standard logic processes, including multiple time programmable memory (MTP), one time programmable memory (OTP), fuse-based trim capabilities, high K metal-insulator-metal capacitors, copper wire bonding compatibility, thick low-cost aluminum top metallization, and low-cost redistribution layer (RDL) process options.
High-performance 12V to 30V Lateral-DMOS power devices are fully isolated from the substrate and features low Rsp (specific on resistance) for the applications where power device area and efficiency are critical. The isolation of the high voltage devices from the substrate is achieved without the use of costly epitaxial layers and buried layers, and sacrificing latch-up performance while minimizing substrate injection.
"We are very pleased to offer our new 0.18um embedded BCD process solution with features that support 12~30V power applications while minimizing manufacturing processing costs," said Namkyu Park, Senior Vice President of Marketing for MagnaChip's Semiconductor Manufacturing Services Division. "Our modular based BCD process enables us to quickly support our customers' unique manufacturing requirements for a variety of high voltage applications in a very timely fashion."
About MagnaChip Semiconductor
Headquartered in South Korea, MagnaChip Semiconductor is a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products for high volume consumer applications. MagnaChip Semiconductor believes it has one of the broadest and deepest range of analog and mixed-signal semiconductor platforms in the industry, supported by its 30-year operating history, a large portfolio of registered and pending patents, and extensive engineering and manufacturing process expertise. For more information, please visit www.magnachip.com.
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