CMOS Synchronous DRAM comes in 2M x 32, 4M x 32 configurations.

Press Release Summary:



While AS4C2M32S-7TCN (2M x 32 bit device) comes in 90-ball, 8 x 13 x 1.2 mm TFBGA package, AS4C4M32S-7TCN (4M x 32 bit device) comes in 86-pin, 400 mil plastic TSOP II package. Access times for these SDRAMs are 5.4 and 5.5 nsec, respectively, while clock rates are 143 and 166 MHz. Operation is from single +3.3 V ±0.3 V power supply over 0 to +70°C range. Features include programmable read or write burst lengths. auto pre-charge function, refresh functions, and programmable mode register.



Original Press Release:



Alliance Memory Releases 2M x 32 and 4M x 32 High-Speed CMOS SDRAMs in 90-Ball TFBGA and 86-Pin TSOP II Packages



SAN CARLOS, Calif. – Alliance Memory today extended its 64M and 128M lines of high-speed CMOS synchronous DRAMs (SDRAM) with a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package.



The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth. For these applications, the AS4C2M32S-7TCN and AS4C4M32S-7TCN feature fast access time from clock down to 5.4 ns and fast clock rates to 166 MHz.



Offering a commercial temperature range of 0 °C to 70 °C, the SDRAMs operate from a single +3.3-V (± 0.3 V) power supply and are lead (Pb)- and halogen-free. The devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.



The AS4C2M32S-7TCN and AS4C4M32S-7TCN are the latest in Alliance Memory's full line of high-speed SDRAMs, which includes devices with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages.




































Device Specification Table:

Part number

AS4C2M32S-7TCN

AS4C4M32S-7TCN

Density

64 Mb

128 Mb

Configuration

2M x 32 bit

4M x 32 bit

Access time

5.4 ns

5.5 ns

Clock rate

143 MHz

166 MHz

Package

90-ball TFBGA

86-pin TSOP II



Samples and production quantities of the new SDRAMs are available now, with lead times of eight weeks for large orders. Pricing starts at $0.90 per piece for the AS4C2M32S-7TCN and $1.50 per piece for the AS4C4M32S-7TCN.



About Alliance Memory Inc.

Alliance Memory Inc. is a worldwide provider of legacy memory products for the communications, computing, industrial, and consumer markets. The company supports a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, synchronous DRAMs (SDR) and double data rate synchronous DRAMs (DDR SDRAM). Alliance Memory is a privately held company with headquarters in San Carlos, Calif., and regional offices in Germany, France, the United Kingdom, Italy, Sweden, and South East Asia. More information about Alliance Memory is available online at www.alliancememory.com.







Alliance Memory:

Kim Bagby

CFO

+1 650-610-6800

kim@alliancememory.com  



Agency Contact:

Bob Decker

Redpines

+1 415-409-0233

bob.decker@redpinesgroup.com


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