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CMOS DDR2 SDRAMs offer 400 MHz clock rate, 800 Mbps/pin data rate.

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CMOS DDR2 SDRAMs offer 400 MHz clock rate, 800 Mbps/pin data rate.
CMOS DDR2 SDRAMs offer 400 MHz clock rate, 800 Mbps/pin data rate.
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March 18, 2014 - Supplied in 60-ball, 8 x 10 x 1.2 mm and 84-ball, 8x 12.5 x 1.2 mm FBGA packages, AS4C32M16D2 (512 Mb) and AS4C64M16D2/AS4C128M8D2 (1 Gb) are respectively internally configured as 4 banks of 8M words x 16 bits and8 banks of 8M x 16 bits/16M x 8 bits. Features include programmable read or write burst lengths of 4 or 8, auto precharge function, refresh functions, and programmable mode register. All models have synchronous interface and operate from single +1.8 V (0.1 V) supply.

Alliance Memory Introduces New High-Speed CMOS Double Data Rate 2 (DDR2) Synchronous DRAMs with 512-Mb and 1-Gb Densities in 60-Ball (x8) and 84-Ball (x16) FBGA Packages


Alliance Memory, Inc.
551 Taylor Way, Suite #1
San Carlos, CA, 94070
USA



Press release date: March 10, 2014

SAN CARLOS, Calif. — Alliance Memory today introduced a new line of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) with densities of 512 Mb (AS4C32M16D2) and 1 Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages.

The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in automotive, industrial, consumer, and networking products requiring high memory bandwidth. The AS4C32M16D2 is internally configured as four banks of 8M words x 16 bits. The AS4C64M16D2 and AS4C128M8D2 are internally configured as eight banks of 8M x 16 bits and 16M x 8 bits, respectively. The DDR2 SDRAMs offer a synchronous interface, operate from a single + 1.8-V ( 0.1 V) power supply, and are lead (Pb)- and halogen-free.

The AS4C32M16D2, AS4C64M16D2, and AS4C128M8D2 feature a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin, and they are offered in commercial (0 C to +85 C), industrial (-40 C to + 95 C), and automotive (-40 C to +105 C) temperature ranges. The DDR2 SDRAMs provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Device Specification Table:
Part # Density Configuration Package Temp. range
AS4C32M16D2-25BCN 512 Mb 32M x 16 bit 84-ball FBGA 0 to +85 C
AS4C32M16D2-25BIN 512 Mb 32M x 16 bit 84-ball FBGA -40 to +95 C
AS4C32M16D2-25BAN 512 Mb 32M x 16 bit 84-ball FBGA -40 C to +105 C
AS4C64M16D2-25BCN 1 Gb 64M x 16 bit 84-ball FBGA 0 to +85 C
AS4C64M16D2-25BIN 1 Gb 64M x 16 bit 84-ball FBGA -40 to +95 C
AS4C64M16D2-25BAN 1 Gb 64M x 16 bit 84-ball FBGA -40 C to +105 C
AS4C128M8D2-25BCN 1 Gb 128M x 8 bit 60-ball FBGA 0 to +85 C
AS4C128M8D2-25BIN 1 Gb 128M x 8 bit 60-ball FBGA -40 to +95 C
AS4C128M8D2-25BAN 1 Gb 128M x 8 bit 60-ball FBGA -40 C to +105 C

Samples of the new DDR2 SDRAMs are available now, with lead times of six to eight weeks for production quantities. Pricing for U.S. delivery starts at $1.30 per piece.

About Alliance Memory Inc.
Alliance Memory Inc. is a worldwide provider of legacy memory products for the communications, computing, industrial, and consumer markets. The company supports a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, synchronous DRAMs (SDR) and double data rate synchronous DRAMs (DDR SDRAM). Alliance Memory is a privately held company with headquarters in San Carlos, Calif., and regional offices in Germany, France, the United Kingdom, Italy, Sweden, and South East Asia. More information about Alliance Memory is available online at www.alliancememory.com.
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