QWI Enabled Laser Diode Technology from Intense Ltd. Featured at Photonics West |
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Intense
4 Stanley Boulevard
Glasgow, United Kingdom
Press release date: December 18, 2007
Professor John Marsh, CTO, to Address Impact of QWI Enabled Technology at Conference; Intense Ltd. to Showcase New QWI Enabled Products at Exhibition
Glasgow, United Kingdom -- 18 December 2007 -- Intense Ltd., developer of next generation semiconductor lasers, will feature the latest advances in QWI enabled diode lasers at SPIE's Photonics West, January 22-24, 2008, in San Jose, California. Professor John Marsh, Ph.D., Intense's CTO, will deliver two technical presentations on QWI technology in semiconductor lasers and its ability to deliver new levels of power and reliability. The presentations will be held in Hall 1, Opto Town Square, Demo Area 1:
o "High Power Fibre Coupled QWI Modules," Wednesday, January 23, 2007, 10:30 a.m., Professor John Marsh, Ph.D. Learn how Intense uses Quantum Well Intermixing to enhance the power and reliability of high power fibre coupled 8xx and 9xx nm modules in its new series of QWI enabled single emitter diodes.
o "QWI Enabled Single Mode Diodes," Thursday, January 24, 2007, 1:30 p.m., Professor John Marsh, Ph.D. Discover how Quantum Well Intermixing enables Intense's new Series 6000 and Series 6100 single mode lasers to run at 200 mW at 830 nm and 980 nm. With 17 million operating hours recorded, these QWI enabled lasers demonstrate exceptional reliability.
In addition, three technical presentations by Intense's technical team are scheduled:
o "High-Reliability, High-Power Arrays of 808-nm Single-Mode Diode-Lasers Employing Various Quantum Well Structures," Dr. Stewart McDougall, Technology Development Director, Intense Ltd. Session: OPTO 2008, Wednesday, 23 January 2007, 8:10 a.m. - 10:00 a.m., Novel In-Plane Semiconductor Lasers VII, Session 8: High Brightness.
o "High-Power Coupled Tapered-Laser Arrays with 100% Fill-Factor Emission Facet," Daniel Yanson, Ph.D., Principal Engineer, Intense Ltd. Session: OPTO 2008, Thursday 24 January 2007, 8:10 am - 10:10 am, Novel In-Plane Semiconductor Lasers VII, Session 12: High Power.
o "Spectral Slicing of Femtosecond Pulses Using Semiconductor Modulator Arrays," Daniel Yanson, Ph.D., Principal Engineer, Intense. Ltd with Michael Jost and Ian McKenzie, European Space Research and Technology Center. Session: LASE 2008, Thursday, 24 January 2007, 4:00 - 5:00 pm Free-Space Laser Communication Technologies XX, Session 6: Modulation Techniques. High Power Single Mode Diodes, Bars and Stacked Arrays
Intense will exhibit at Photonics West in Booths #5041 and #5044 in the Main Hall Foyer. They will showcase their expanded line of QWI enabled laser diodes, including high power visible and IR laser diodes, bars and stacked arrays, fiber lasers, and individually addressable arrays. Intense will feature the Series 6000 high brightness, QWI enabled single mode laser diodes. The Series 6000 lasers are available in 830 nm and 980 nm wavelengths with up to 200 mW of kink-free power. These high beam quality lasers have low astigmatism and a Gaussian far field. They are ideally suited for defense applications, such as targeting, range finding, and illumination.
The Hermes' family of high power bars and stacked arrays will also be on display. Available in wavelengths from 8xx nm to 9xx nm, Hermes lasers are qualified to military specifications. The bars and arrays feature superior power, high reliability, and innovative, robust packaging. Quantum Well Intermixing: Brightness, Reliability, Efficiency
Utilizing its patented Quantum Well Intermixing (QWI) technology, Intense creates innovative laser products that enable unrivalled levels of power, brightness, and reliability. State-of-the-art, high volume manufacturing processes deliver exceptional performance in high power visible and IR laser diodes, high power bars and stacked arrays, high power fiber lasers, and individually addressable arrays. Intense's patented Quantum Well Intermixing process increases the quantum well bandgap of a semiconductor laser in a controlled and highly precise manner so that active and passive sections can be created in the same laser cavity. Passive non-absorbing mirrors (NAMs) are created at the facet regions of the cavities to avoid catastrophic optical mirror damage (COMD), a problem frequently encountered in typical laser devices.
About Intense
Intense Ltd., headquartered in Glasgow, UK, is a leading provider of single and multimode monolithic laser array products and high power laser diodes. The company's patented innovations in Quantum Well Intermixing (QWI) and Asymmetric Waveguides (AW) generate uniquely high power, brightness, and reliability. This, combined with state-of-the-art, high volume manufacturing facilities in the UK and US, delivers unsurpassed product quality and value to customers in the print and imaging, defense, industrial, display, and medical markets. For more information, visit http://www.intenseco.com.
For further information, contact: Chris Baker VP Sales & Marketing Intense Ltd. 4 Stanley Blvd, Hamilton Intl Technology Park Blantyre, Glasgow G72 0BN UK +44 (0) 1698 827000 Email: chris_baker@intenseco.com Web: http://www.intenseco.com
US Contact: Kevin Laughlin VP HPL Global Business Development Intense Ltd. 1200A Airport Road North Brunswick, NJ 08902 USA (732) 249-2228 Email: kevin_laughlin@intenseco.com
PR Office: Shari Worthington, President Telesian Technology Inc. 49 Midgley Lane Worcester, MA 01604 USA (508) 755 5242 Email: sharilee@telesian.com
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