Company News

Richardson RFPD, An Arrow Company

1950 S Batavia Ave., Suite 100, Geneva, IL, 60134, USA

  • 800-737-6937

Latest New Product News from
Richardson RFPD, An Arrow Company

Communication Systems & Equipment, Electrical Equipment & Systems

UltraCMOS® RF SOI Switches deliver IIP3 of +48 dBm linearity.

April 21, 2017

Offering 8 nsec of switching time, UltraCMOS® RF SOI Switches are available in PE42525 and PE426525 models. Supporting 9 kHz to 60 GHz frequency range, units come with HaRP™ technology. Switches provide insertion loss of 1.3 dB, 1.7 dB, 1.9 dB and 2.9 dB and port to port isolation of 41 dB, 38 dB, 37 dB and 36 dB at 26.5 GHz, 45 GHz, 50 GHz and 60 GHz frequency respectively. PE42525 is used... Read More

Electronic Components & Devices

Airfast™ RF LDMOS Transistor is designed for two-way radio applications.

April 14, 2017

Suitable for large-signal and common-source amplifier applications, AFM906NT1 Airfast™ RF LDMOS Transistor is operated in 136 to 941 MHz frequency with 7.5 V of supply voltage. Featuring 20.3 dB power gain at 520 MHz, unit offers +37.8 dBm of P1dB and 6.8 W output power. Product offers 70.8 % efficiency.

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Electronic Components & Devices

SCALE-iDriver™ Integrated Circuits feature short-circuit protection.

April 3, 2017

Available in SID1132K, SID1152K, SID1182K models with 2.5 A, 5.0 A and 8.0 A peak output drive currents respectively, SCALE-iDriver™ Integrated Circuits come with IGBT and MOSFET driver in eSOP package. Suitable for 600 V, 650 V, 1200 V IGBT and MOSFET switches, units feature switching frequency of up to 250 kHz. Operated in -40°C to 125°C temperature range, product comes with 5 ns... Read More

Computer Hardware & Peripherals

WP8548 3G Cellular Module comes with AT and T carrier approval.

March 29, 2017

Offering B1, B2, B5, B6, B8, B19 of 3G UMTS/HSPA frequency bands and 850, 900, 1800, 1900 of 2G EDGE/GSM/GPRS frequency bands, WP8548 3G Cellular Module comes with CE, FCC, PTCRB, GCF, IC, JRF/JPA, NCC approvals. Units are used for sending valuable data to cloud.

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Communication Systems & Equipment

mXTEND™ SMT Multiband Antennas feature fractal geometry design.

February 16, 2017

Available in FR01-S4-250 (5.0 x 5.0 x 5.0 mm), FR01-S4-232 (10.0 x 3.2 x 3.2 mm), FR01-S4-224 (12.0 x 2.4 x 3.0mm) and FR01-S4-224 (24.0 x 12.0 x 2.0mm) space saving designs, mXTEND™ SMT Multiband Antennas are operated in 698-2690 frequency range. Offering multiband performance in wireless/mobile devices, units are designed with miniature, standard, off-the-shelf components.

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Test & Measuring Instruments

CRD-060DD17P-2 Demonstration Board comes with active start-up circuit.

February 13, 2017

Reducing start-up loss, CRD-060DD17P-2 Demonstration Board is operated in 300 V to 1000 V input voltage range. Delivering 48W of power, unit is designed with 1700 V SiC MOSFET. Suitable in auxiliary power supplies and switch mode power supplies, CRD-060DD17P-2 uses ultra-low drain gate capacitive C2M1000170J power transistor.

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Electronic Components & Devices

SAX248 Tunable Bandpass Filter offers 35 µs tuning speed.

January 21, 2017

Suitable for tactical communications applications, SAX248 Tunable Bandpass Filter is operated with 3.3 V supply and consumes < 80 mW DC power. Delivering 3.5% typical, 5% max bandpass bandwidth, 1.5:1 typical VSWR, unit comes in 1.2 x 0.65 x 0.25 in. package. Offering +33 dBm of P1dB and insertion loss of less than 4.5 dB with 0.5 MHz step size, product comes with evaluation board.

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Electronic Components & Devices

GaN RF Transistor are CW and pulse capable.

January 16, 2017

Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.

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Electronic Components & Devices

TGM2635-CP Power Amplifier features copper base.

December 16, 2016

Suitable for military, commercial X-band radar systems and satellite communications system application, TGM2635-CP Power Amplifier is designed in 10-lead 19.05 mm x 19.05 mm bolt down package. Providing 100 W saturated power with 22.5 dB signal gain, unit features DC blocked RF ports for system integration. Operating in 7.9 to 11 GHz frequency, unit offers VD = 28 V, IDQ = 1.3 A, VG = -2.6 V... Read More

Materials & Material Processing

GaAs MMIC Double Balanced Mixer requiring no matching circuitry.

December 9, 2016

Applicable in point-to-point and point-to multipoint radios, VSAT, sensors and military end use, HMC557A and HMC773A GaAs MMIC Double Balanced Mixer uses optimized balun structures to provide good LO to RF and LO to IF isolation. Applied as up-converter or down-converter from 2.5GHz to 7.0GHz, HMC557A comes in 24-lead, ceramic 4mm x 4mm LCC package. HMC773A comes in 24-lead, ceramic 3mm x 3mm... Read More

Electronic Components & Devices

C3M0065100K MOSFETS provide notch between drain and source pins.

December 2, 2016

With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at... Read More

Electronic Components & Devices

High-Power SMT Attenuators have impedance at 50 ohms.

December 1, 2016

Sutable for applications requiring low noise, inductance and parasitic capacitance like military and aerospace fields, High-Power SMT Attenuators offer virtual flat loss over broad frequency spectrum. Product is stable over temperature and time with balanced Pi design for even current distribution and accurate attenuation from DC to 20GHz. Features Tantalum nitride resistors, attenuation of... Read More

Computer Hardware & Peripherals

Daughterboard Evaluation Kits for performance of GaN E-HEMTs.

November 18, 2016

Used for evaluating GaN E-HEMT performance half-bridge topology circuits, Daughterboard Evaluation Kits works for GS665MB-EVB universal motherboards and custom made system designs. Kits consists of 2 GaN Systems 650 V GaN E-HEMTs with half-bridge gate drivers, isolated power supplies and optional heatsink. Features uniform footprint and form factor, current shunt position for switching test... Read More

Materials & Material Processing

UltraCMOS Image Reject Mixer features double-balanced high LO–RF isolation.

November 12, 2016

Operated with single-ended signals on the Radio Frequency (RF) and LO ports, PE41901 Image Reject Mixer can be used as either upconverter or downconverter. Reducing LO leakage by including LO path 90° coupler and RF port baluns on single die, unit improves LO-RF isolation. Manufactured on UltraCMOS process, product is suitable for Ku-band earth terminals like Very Small Aperture Terminal... Read More

Communication Systems & Equipment

System-On-Chip Radio Solution with JESD204B digital interface.

October 31, 2016

Providing tuning range of 100 MHz to 6 GHz, 250 MHz signal bandwidth, AD9371 System-on-chip Radio Solution offers dual transmitters and receivers. Enabling two inputs for observation receiver, unit comes with transmitter synthesis bandwidth up to 250 MHz and receiver bandwidth of 8 MHz to 100 MHz. Supporting frequency division duplex, and time division duplex  (TDD) operation,... Read More

Electrical Equipment & Systems, Electronic Components & Devices

MACOM's MASW-011071 20 W X-Band SPDT Switch housed in 44-lead PQFN plastic package.

October 13, 2016

Fabricated using MACOM’s patented HMIC process, MASW-011071 20 W SPDT switch is designed for X-band high-power and high-performance applications. Integrating a bias network to allow for simplified bias application and switch control, unit can handle greater than 20w CW power at +70 ºC with 8.0–10.5 GHz frequency band. With 1 dB insertion loss and 38 dB isolation performance, MASW... Read More

Electrical Equipment & Systems

High-Speed FET Driver offers high-frequency performance.

October 4, 2016

Designed to control gates of external power devices, PE29100 UltraCMOS® FET Driver delivers outputs capable of switching transition speeds in sub-nanosecond range for hard switching applications up to 33 MHz. Device is based on silicon-on-insulator technology on sapphire substrate, offering performance of GaAs with integration of conventional CMOS. Supplied in flip chip package, driver... Read More

Electronic Components & Devices

Richardson RFPD, Inc. LDMOS transistor designed to decrease amplifier size and BOM.

September 12, 2016

Offering an output of 1500 W CW at 50 V, MRF1K50H eliminates the need for large number of transistors in high-power RF amplifiers. Suitable for applications ranging from laser and plasma sources to particle accelerators, unit operates upto 500 MHz. Product has high drain-source avalanche energy absorption capability and a wide frequency range for input and output, and is adaptable for... Read More

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Richardson RFPD, An Arrow Company