Transistors

Transistors

Discrete IGBTs replace 200-300 V MOSFETs.

Offered in TO-220, TO-247, D2, and D3 packages, 300 V IGBTs use Power MOS 7® Technology and are designed to replace 200-300 V MOSFETs in switching applications to 200 kHz. Also suited for plasma display panel applications, products offer IC2 values of 26, 32, 60, and 83 A depending on model. Additional applications include DC-DC converters for Telecom, DC-AC inverters for alternate energy...

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Bipolar Transistor suits induction heating applications.
Transistors

Bipolar Transistor suits induction heating applications.

Model FGL60N100BNTD is a 1,000 V/60 A Insulated Gate Bipolar Transistor that combines trench technology and non-punch through technology. It offers switching speeds of 130 ns and low saturation voltage of 2.5 V at 60 A. Avalanche immunity protects unit from field failure caused by break down avalanche during off-state. Available in TO-264 package, lead-free transistor meets or exceeds...

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MOSFETs suit automotive applications.
Transistors

MOSFETs suit automotive applications.

PowerTrench® N-Channel, 30 V MOSFETs, Models FDD044AN03L, FDU044AN03L, FDD068AN03L, and FDU068AN03L are offered in D-PAK and I-PAK packaging for surface or through-hole mount designs. At 3.9 mOhms max, Models FDD044AN03L and FDU044AN03L offer lowest RDS(on) at 30 V available in TO-252 and TO-251 packages, respectively. All four are qualified to AEC-Q101 standard. Applications include motor...

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N-Channel MOSFET suits high-current DC/DC converters.
Transistors

N-Channel MOSFET suits high-current DC/DC converters.

Model STD150NH02L will support drain to source voltage of 24 V and max drain current of 150 A. At these ratings, on-resistance is 0.0035 Ohm. At 10 V, typical RDS(on) is 0.003 Ohm and at 5 V it is 0.005 Ohm. Low gate charge helps reduce switching losses, and low thermal resistance facilitates current handling. MOSFET is manufactured using 0.6 Â-µm process, which utilizes metallization and...

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Transistors

Insulated Gate Bipolar Transistors suit UPS applications.

Rated from 16-60 A as discrete IGBTs or co-packs with internal fast recovery diode, C2-Class IGBTs have negative temperature dependence on saturation voltage. They are suited for off-line power conversion applications requiring 600 V devices with switching frequencies up to 200 kHz. Packaging options include TO-220, surface-mountable TO-263 and TO-268, TO-247, and PLUS247. Products are also...

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Transistors

High Voltage MOSFETs can be used in harsh environments.

Available in hermetic, discrete packages, POWER MOS 7® transistors utilize metal on polysilicon gate structure. Products offer low gate charge (Qg) and 0.038-3.0 ohms On-Resistance, which results in maximum current carrying capacities from 4.0-54 A. Offered with breakdown voltages from 200-1,000 V, devices are suited for DC/DC converters, Power Factor Correction (PFC) pre-regulators,...

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Low Voltage MOSFET suits power management applications.
Transistors

Low Voltage MOSFET suits power management applications.

Model FDJ129P P-channel MOSFET features PowerTrench® technology in compact SC75 Flip Leaded Molded Package. Power dissipation is 1.8 W and max steady-state current rating is 4.2 A. Unit reduces system power drain by providing low-loss switching, with max pulsed current of 16 A. FLMP packaging eliminates wire-bonds to provide extremely low electrical resistance. It also provides low thermal...

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Planar MOSFETs suit multi-market applications.
Transistors

Planar MOSFETs suit multi-market applications.

Series C and V2 QFET® planar MOSFETs combine DMOS and planar stripe structure technologies. They offer reduced on-state loss by lowering on-resistance and reduced switching loss by lowering gate charge and output capacitance. Products come in standard surface-mount and through-hole type packages and are suitable for power supplies, power factor correction, DC/DC converters, plasma display...

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Solder Redefined
Sponsored

Solder Redefined

Indium Corporation has developed a new twist on traditional solder by developing a composite with a reinforced matrix internal structure. The result is a solder with increased strength and reliability. Check out this video to learn more about the mechanics behind the groundbreaking technology.

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