Transistors

Transistors

RF Transistor operates from DC to 2.7 GHz.

Model CRF-24010 Class A/B, 48 V silicon carbide MESFET offers minimum gain of 13 dB at 2 GHz, and has IM3 of -31 dBc at peak envelope power of 10 W. It features multi-octave instantaneous bandwidth, making is suitable for broadband large signal applications.

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Infrared Switch suits limited space, non-contact switching.
Miscellaneous Switches

Infrared Switch suits limited space, non-contact switching.

QVE00033 phototransistor infrared transmissive switch with miniature infrared sidelookers is for non-contact switching in disk drives, card detectors, and controllers. Optical switch has temperature resistant black plastic housing and is 7.50 x 4.05 x 5.40 mm. GaAs LED faces silicon phototransistor across 2 mm gap with 0.4 mm aperture. Peak transmission wavelength is infrared at 940 nm and...

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Bipolar Transistors triple power dissipation .
Transistors

Bipolar Transistors triple power dissipation .

MPPS(TM) Bipolar Transistors come in micro leaded packages. Size 3 x 2 mm package accommodates dual die and occupies same PCB area as single die SOT23 package, while 2 x 2 mm size supports single die and takes same space as SOT23 package. Off-board height of both packages is 0.9 mm, making them suitable for add-in card design and flat screen applications.

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A Guide to Quality Control of the SMT Process
Sponsored

A Guide to Quality Control of the SMT Process

The printed circuit board (PCB) manufacturing process begins with cutting-edge equipment capable of accurately picking and placing up to 40,000 components per hour. This innovative equipment keeps error rates extremely low, and those defects that do occur are quickly caught by sensitive laser and optical inspection equipment.

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Transistor/Schottky Diodes feature 3 x 2 mm package.
Rectifiers (Diodes)

Transistor/Schottky Diodes feature 3 x 2 mm package.

Provided in miniature micro leaded package (MLP), Series of MOSFET/Schottky and Bipolar/Schottky combination products offer board space savings of 88% over alternative SM8 packaged products. One NPN and 3 PNP bipolar combination products are offered, featuring true 1 A DC rated, 40 V fast switching Schottky barrier diode. Bipolar transistor's on-state voltage is typically 140 mV at 1 A, and range...

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Transistors

MOSFETs meet requirements of linear applications.

APL502 and APL602 are 600 V linear MOSFETs that provide high power dissipation and high forward biased safe operating area (FBSOA). They are available in TO-265, T-MAX(TM), and ISOTOP® (SOT-227) packages. Military screening and hermetic packaging options are also available. Applications include electronic loads, linear regulators, and class A amplifiers.

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IGBT Module is available in phase-leg topology.
Transistors

IGBT Module is available in phase-leg topology.

MII 400-12E4 Dual Pack IGBT module has ratings of 420 A Ic @ Tc = 25°C and 1200 V VCEs. Using 3rd generation Non-Punch-Through (NPTÂ-³) IGBT chips, module features 20% reduction in saturation voltage along with 20% reduction in switching losses. Associated fast recovery diodes are fabricated utilizing HiPerFRED(TM) technology that provides fast recovery with soft characteristics, low...

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Trench IGBT suits induction heating appliances.
Transistors

Trench IGBT suits induction heating appliances.

FGL60N100D 1000 V trench Insulated Gate Bipolar Transistor (IGBT) provides sufficient voltage margins for both quasi-resonant- and single-ended topologies. Trench technology offers high-speed switching performance up to 50 KHz. Transistor includes built-in fast recovery diode. Conductance specifications include: Vce (sat) = 2.5 V @ Ic = 60 A.

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Transistors

MOSFETs have plastic encapsulated housing.

ISOPLUS 227 package is mechanically interchangeable with SOT-227B package. It uses direct-copper-bonded alumina substrate to reduce weight while maintaining same isolation voltage and thermal fatigue capability of latter package. Products range from IXFE180N10 176A/100V rated MOSFET to IXFE36N100 33A/1000V MOSFET, to buck and boost configured IXFE48N50QD2 and IXFE48N50QD3 units. Both of these...

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IGBTs utilize metal on polysilicon gate structure.
Transistors

IGBTs utilize metal on polysilicon gate structure.

POWER MOS 7(TM) 600 and 1200 V IGBTs are designed to replace 500/600 V and 1000/1200 V MOSFETs, respectively, in switch mode power supply, power factor correction, and other high-power applications. Units operate up to 150 kHz without current de-rating. IGBTs are available in two die sizes for 600 V and one die size for 1200 V, with and without anti-parallel diodes, in 10 die package combinations.

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