Transistors

IGBTs utilize metal on polysilicon gate structure.
Transistors

IGBTs utilize metal on polysilicon gate structure.

POWER MOS 7(TM) 600 and 1200 V IGBTs are designed to replace 500/600 V and 1000/1200 V MOSFETs, respectively, in switch mode power supply, power factor correction, and other high-power applications. Units operate up to 150 kHz without current de-rating. IGBTs are available in two die sizes for 600 V and one die size for 1200 V, with and without anti-parallel diodes, in 10 die package combinations.

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MOSFETs feature BGA packaging.
Transistors

MOSFETs feature BGA packaging.

MOSFETs include single and common-drain dual devices in both N-channel and P-channel versions. They have breakdown voltage ratings from 20V to 30V, maximum RDS(on) ratings from 75 milliohms to 2.9 milliohms, and are gate-drive voltage specified, as low as 2.5V. Ball Grid Array (BGA) packaging reduces overall profile of circuit board with 0.76 mm maximum mounted height.

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Transistors

MOSFETs have high voltage depletion mode.

IXTP01N100D and IXTP02N50D MOSFETS are normally on at 0V gate bias and require negative gate bias to block current. IXTP01N100D is 1000V/100mA rated MOSFET with 110 ohm RDS(on) at VGS=0V, while IXTP02N50D is rated at 500V/200mA with RDS(on) of 30 ohms. Both devices are housed in TO-220 package allowing for high power dissipation. Applications include level shifters, current regulators, normally...

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Transistors

MOSFETs feature electrically isolated mounting.

IXUC100N055, IXUC200N055 and IXUC160N075 Trench Power MOSEFETs possess high current ratings of 100, 200 and 160 A, respectively. IXUC100N055 and the IXUC200N055 are rated at VDS (Drain Source Voltage) equal to 55V, while IXUC160N075 has VDS rating of 75V. All are housed in hole-less packages that conform to TO-220 outline. Frame is direct-copper-bonded alumina with 2500V isolation. Maximum...

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