Transistors

DC to DC Power Supplies (Converters)

Vishay to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC® 2012

Vishay Intertechnology to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC® 2012 MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC®) 2012, taking place Feb. 5-9 at the Disney Coronado Springs Resort in Orlando, Fla. In booth 911, the...

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DC to DC Power Supplies (Converters)

Vishay to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC-® 2012

Vishay Intertechnology to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC-® 2012 MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC®) 2012, taking place Feb. 5-9 at the Disney Coronado Springs Resort in Orlando, Fla. In booth 911,...

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Transistors

Vishay Siliconix TrenchFET® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine

MALVERN, Pa. - Dec. 19, 2011 - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge...

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Transistors

Vishay Siliconix TrenchFET-® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine

MALVERN, Pa. - Dec. 19, 2011 - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET-® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge...

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Transistors

Vishay Siliconix TrenchFET® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine

MALVERN, Pa. - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge figure of merit (FOM)...

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Transistors

Vishay Siliconix TrenchFET-® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine

MALVERN, Pa. - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET-® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge figure of merit...

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Transistors

Fujitsu Semiconductor and SuVolta Demonstrate Ultra-Low-Voltage Operation of SRAM Down to ~0.4V

Tokyo - Fujitsu Semiconductor Limited and SuVolta Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating SuVolta's PowerShrink low-power CMOS platform into Fujitsu Semiconductor's low-power process technology. By reducing power consumption, these technologies will make possible the...

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Transistors

Fujitsu Semiconductor and SuVolta Demonstrate Ultra-Low-Voltage Operation of SRAM Down to ~0.4V

Tokyo - Fujitsu Semiconductor Limited and SuVolta Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating SuVolta's PowerShrink low-power CMOS platform into Fujitsu Semiconductor's low-power process technology. By reducing power consumption, these technologies will make possible the...

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Nitronex Partnership with GCS Leads to a Capacity Advantage in Rapidly Growing GaN RF Market
Semiconductors

Nitronex Partnership with GCS Leads to a Capacity Advantage in Rapidly Growing GaN RF Market

Nitronex qualifies NRF1 GaN process at GCS... DURHAM, NC - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has successfully completed qualification of its NRF1 discrete process for volume production at Global Communication Semiconductors...

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Nitronex Partnership with GCS Leads to a Capacity Advantage in Rapidly Growing GaN RF Market
Semiconductors

Nitronex Partnership with GCS Leads to a Capacity Advantage in Rapidly Growing GaN RF Market

Nitronex qualifies NRF1 GaN process at GCS... DURHAM, NC - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has successfully completed qualification of its NRF1 discrete process for volume production at Global Communication Semiconductors...

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Precision Machining Solutions with Over 25 Years of Experience

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