Vishay to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC® 2012
Vishay Intertechnology to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC® 2012 MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC®) 2012, taking place Feb. 5-9 at the Disney Coronado Springs Resort in Orlando, Fla. In booth 911, the...
Read More »Vishay to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC-® 2012
Vishay Intertechnology to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC-® 2012 MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC®) 2012, taking place Feb. 5-9 at the Disney Coronado Springs Resort in Orlando, Fla. In booth 911,...
Read More »Vishay Siliconix TrenchFET® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine
MALVERN, Pa. - Dec. 19, 2011 - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge...
Read More »Vishay Siliconix TrenchFET-® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine
MALVERN, Pa. - Dec. 19, 2011 - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET-® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge...
Read More »Access Hardware: Medical Solutions
This guide will provide a closer look at solutions for medical equipment and devices
Read More »Vishay Siliconix TrenchFET® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine
MALVERN, Pa. - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge figure of merit (FOM)...
Read More »Vishay Siliconix TrenchFET-® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine
MALVERN, Pa. - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET-® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge figure of merit...
Read More »Fujitsu Semiconductor and SuVolta Demonstrate Ultra-Low-Voltage Operation of SRAM Down to ~0.4V
Tokyo - Fujitsu Semiconductor Limited and SuVolta Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating SuVolta's PowerShrink low-power CMOS platform into Fujitsu Semiconductor's low-power process technology. By reducing power consumption, these technologies will make possible the...
Read More »Fujitsu Semiconductor and SuVolta Demonstrate Ultra-Low-Voltage Operation of SRAM Down to ~0.4V
Tokyo - Fujitsu Semiconductor Limited and SuVolta Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating SuVolta's PowerShrink low-power CMOS platform into Fujitsu Semiconductor's low-power process technology. By reducing power consumption, these technologies will make possible the...
Read More »Nitronex Partnership with GCS Leads to a Capacity Advantage in Rapidly Growing GaN RF Market
Nitronex qualifies NRF1 GaN process at GCS... DURHAM, NC - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has successfully completed qualification of its NRF1 discrete process for volume production at Global Communication Semiconductors...
Read More »Nitronex Partnership with GCS Leads to a Capacity Advantage in Rapidly Growing GaN RF Market
Nitronex qualifies NRF1 GaN process at GCS... DURHAM, NC - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has successfully completed qualification of its NRF1 discrete process for volume production at Global Communication Semiconductors...
Read More »Precision Machining Solutions with Over 25 Years of Experience
Quality, customer service, and unbeatable value are the hallmarks of Hogge Precision. Since 1989 we have built a reputation as the go-to precision machining source, servicing many demanding industries. For CNC machining and screw machining, there are few manufacturers that can match our capabilities and expertise. See our video to learn more.
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