Transistors

IGBTs feature strip layout for operation up to 50 kHz.
Transistors

IGBTs feature strip layout for operation up to 50 kHz.

PowerMESH STGP20NC60V and STGW20NC60V are 30 A, 600 V n-channel IGBTs offered in TO-220 or TO-247 packages, respectively. Optimized Crss/Ciss ratio avoids cross-conduction phenomena and low gate charge. Equivalent Model STGW20NC60VD comes in TO-247 package with co-packaged freewheeling diode. Rated 50 A, 600 V, Model STGW40NC60V comes in TO-247 package. All offer 150°C max operating...

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Transistors

IGBTs target TIG welder applications.

Models APT200GN60J and APT200GN60JDQ4 insulated gate bipolar transistors use Field Stop Trench Gate Technology and are offered in industry standard SOT-227 package. Units operate up to 30 kHz hard-switched and are 10 Â-µs short circuit rated. In addition to being used in output inverter of aluminum TIG welders, devices can be used in any application requiring low conduction losses at high...

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Transistors

Depletion-Mode MOSFET features 700 V breakdown voltage.

With 42 ohm max on-resistance, DN2470 N-channel MOSFET minimizes power dissipation as well as voltage drops and is free from thermal runaway and thermally induced secondary breakdown. Depletion-mode allows construction of normally on solid-state relays and 2 terminal constant current sources. Breakdown voltage provides protection against high-voltage transients in NC solid-state relays, SMPS...

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MOSFET features 7.5 nC Miller charge.
Transistors

MOSFET features 7.5 nC Miller charge.

Model FDS3572 is an 80 V N-channel MOSFET in SO-8 packaging for fast switching. It features low RDS(on) of 16 milliohms, total gate charge of 31 nC at VGS=10 V, and QRR of 70 nC for low reverse recovery losses. Unit is suited for pre-regulated, full- or half-bridge dc/dc converter circuit applications. Device can also be used as synchronous rectifier to replace higher voltage Schottky rectifiers...

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Hybrid Transistor suits PFC and high-power applications.
Electrical Transmitters

Hybrid Transistor suits PFC and high-power applications.

Supplied in screw-mounted ISOTOP package, 4-terminal STE50DE100 hybrid emitter-switched bipolar transistor sustains collector-source voltage of 1,000 V and collector currents up to 50 A. Power dissipation is 160 W at 25˚C and max operating junction temperature is 150˚C. Due to cascode configuration and dedicated bipolar technology, device offers square reverse bias safe operating area, enabling...

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Transistors

Power Modules feature 12 mm profile.

Suited for low power applications, Power Modules in SP3 package offer minimum parasitic inductance, solderable pins for mounting to PCB, and base plate for thermal resistance. Current ratings range from 11-54 A at Tc=80°C for voltages of 500-1,200 V for MOSFET, FREDFET, and CoolMOS modules. Current ratings range from 10-50 A at Tc=80°C for voltages of 600-1,700 V for PT, NPT, and...

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IGBT Modules minimize power loss in industrial applications.
Transistors

IGBT Modules minimize power loss in industrial applications.

With optimized on-state loss (VCE(sat)) versus turn-off switching loss (Eoff), 50 A Model FMG2G50US120 and 75 A Model FMG2G75US120 feature full, 10 Â-µsec short-circuit withstand time and square reverse biased safe operating area. Model FMG2G75US120 provides max variation of 0.1 V from 25-125°C. Both 1,200 V modules are available in 2-PAK module packaging and are UL certified.

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Transistors

Boost/Buck Chopper Circuits feature SOT-227 package.

COOLMOS(TM) and IGBT Transistors use MOSFETs in plastic SOT-227 package, which provides 2,500 V isolation and screw-on terminals, allowing assembly onto PC board and heatsink. High-voltage transistors combined with fast recovery diodes offer solution to applications requiring high current and high switching frequency up to 200 kHz. Applications include power factor correction converters, DC motor...

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Transistors

Power Modules suit high voltage, zero current switching.

Rated 1,000 and 1,200 V, MOSFET Modules are offered in single switch configuration with currents from 86-160 A and phase leg configuration with currents of 37-49 A. Modules are integrated in SP6 package, which exhibits minimum internal parasitic resistance and inductance. Power devices allow operating in ZCS mode in range of 100-200 kHz for Power MOS 7® PT IGBTs and Fast NPT IGBTs, and...

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Transistors

MOSFET Modules feature current ratings from 13-160 A.

Offered in low profile SP4 and SP6 packages, PowerMOS 7® 1000 and 1200 V MOSFETs and FREDFETs allow operating in hard switching mode in range of 100-200 kHz. They are offered in single switch, Buck, Boost, Dual common source, phase leg, and full bridge configurations. Applications include power factor correction, motor control, UPS, and power supplies operating from 400 Vac mains and above.

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Precision Machining Solutions with Over 25 Years of Experience
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Precision Machining Solutions with Over 25 Years of Experience

Quality, customer service, and unbeatable value are the hallmarks of Hogge Precision. Since 1989 we have built a reputation as the go-to precision machining source, servicing many demanding industries. For CNC machining and screw machining, there are few manufacturers that can match our capabilities and expertise. See our video to learn more.

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