Transistors

Power Controllers

Fairchild Semiconductor to Deliver Solutions for Optimizing System Power in Automotive Applications at Convergence 2006

South Portland, Maine--September 19, 2006--Fairchild Semiconductor (NYSE: FCS), the leading global supplier of products that optimize system power, will demonstrate its leadership position in ignition system products and other solutions for automotive applications at Convergence 2006, being held in Detroit, Michigan, October 16-18. Fairchild's conference exhibit will emphasize its continued...

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Transistors

EMCORE Corporation, Group4 Labs, and Air Force Research Laboratory Announce World's First GaN-on-Diamond Transistor

SOMERSET, N.J., Aug. 1 // -- EMCORE Corporation (NASDAQ:EMKR), a leading provider of compound semiconductor-based components and subsystems for the broadband, fiber optic, satellite, solar power and wireless communications markets, today announced that a team including EMCORE, Group4 Labs and Engineers at the U.S. Air Force Research Labs (AFRL) have demonstrated the world's first successful...

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Transistors

LDMOS Transistor is suited for RF power applications.

Available in RoHS/WEEE-compliant ceramic flanged package, SLD-3091FZ Laterally Diffused Metal Oxide Semiconductor (LDMOS) 30 W transistor promotes design versatility and performance over 10-1,600 MHz range. It is fabricated in XeMOS II(TM) semiconductor process technology and, at 30 W output power (915 MHz), delivers 18 dB gain, 45% drain efficiency, and 28 dBc third order intermodulation...

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Transistors

LDMOS Transistor features thermally efficient packaging.

Housed in RoHS/WEEE compliant plastic encapsulated surface mount package, SLD-1026Z Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor offers performance from 10-2,700 MHz. Transistor operates from 28 V, 50 mA current, and provides 19 dB gain, 35% drain efficiency, and -28 dBc 3rd order intermodulation products at 3 W output power. Product is suited for driver and power amplifiers in...

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Transistors

High-Power Transistors suits cellular/UMTS applications.

Gallium Nitride High Electron Mobility Transistors show peak drain efficiency up to 67% at UMTS and up to 60% at WiMAX frequency bands. Suited for UMTS or 3G base station segment, products achieve gain of 16 dB, power density up to 4 W/mm at 28 V, and 1,000 hr high-temperature reliability. There are 4 models for wireless cellular market that carry ratings from 8-120 W. For WiMAX base stations,...

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MOSFET/IGBT Driver does not require shunt resistor.
Transistors

MOSFET/IGBT Driver does not require shunt resistor.

Supplied in 8-pin DIP, VO3150 combines high-speed optocoupler and 0.5 A MOSFET/IGBT driver in one package. Its 1.0 V max low-level output voltage eliminates need for negative gate drive, and output voltage closely matches positive supply voltage. Able to operate without exhibiting upward voltage drift, product has switching frequency above 16 kHz and isolation voltage of 5,300 Vrms with min of 15...

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IGBT withstands up to 300 mJ of avalanche energy.
Transistors

IGBT withstands up to 300 mJ of avalanche energy.

Offering optimum trade-offs between low conduction loss and switching loss to minimize system's operating temperature, 1,200 V/15 A NPT-Trench IGBT Model FGA15N120ANTD ensures fail-safe operation of systems during abnormal avalanche-mode conditions that affect induction heating appliances. When tested in set evaluation using 1.4 kW/24 kHz IH appliance, trade-offs between device's switching and...

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Pulsed Power Transistor targets avionics applications.
Transistors

Pulsed Power Transistor targets avionics applications.

Providing 500 W of output power, extended length messaging Model MDS 500L offers 55% collector efficiency and 3:1 load mismatch tolerance for Mode-S applications in 1,030-1,090 MHz frequency range. Pulsing is rated at 32 Â-µsec ON/18 µsec OFF x 48 repeated at 23 msec. Performance is based on bipolar silicon chip design that also provides max fast rise time of 80 nsec and Vcc of 50 V....

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Pulse Transistor suits S-band radar applications.
Transistors

Pulse Transistor suits S-band radar applications.

Housed in hermetically sealed package, class C Model 2731-100M provides 100 W peak power, 40% collector efficiency, and 8.0 dB power gain flatness. Unit performs over 2.7-3.1 GHz frequency range with 250 Â-µs pulse width and 10% duty cycle. Providing VSWR 2:1 load mismatch and Vcc of +36 V, transistor is suited for air traffic control and military radar applications.

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Transistors

GaAs FETs support 13.75-14.5 GHz Ku-Band frequency range.

Designed to meet various regional spectrum requirements worldwide, 9 W Model TIM1314-9L features power output of 39.5 dB relative to 1 mW at frequency range of 13.75-14.5 GHz. It is suited for use in Block Upconverter modules in Ku-Band transceivers for Very Small Aperture Terminals. Offering power output of 45.0 dBm, 30 W Model TIM1314-30L is designed for solid-state power amplifiers used in...

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3Sixty Mission Critical Launches New Service Offering UPS as a Service As A Cost Effective Alternative to UPS Equipment Ownership
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3Sixty Mission Critical Launches New Service Offering UPS as a Service As A Cost Effective Alternative to UPS Equipment Ownership

At 3Sixty Mission Critical, we specialize in maintaining the performance and uptime of our customer's mission-critical applications. Our services are comprehensive and designed to take on the entire burden of maintenance. Our "UPS as a service" is just another example of how we develop out of the box solutions to help our customers operate more efficiently; see our video to earn more.

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