Transistors

Single Transistors are made for audio amplifiers.
Transistors

Single Transistors are made for audio amplifiers.

Designed for home and professional audio amplifiers, 2SA2151, 2SC2151A, 2SC6011, and 2SC6011A utilize thinner-die technology technique to promote power-up by minimizing thermal resistance and maximizing voltage avalanche breakdown rating. Power-handling capacity of TO-3P package (160 W) contributes to smaller space for circuit design. While suitable for multi-channel applications for AV...

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Instrument Displays

Display Modules are readable in high ambient light.

Model NL2432HC17-04B 2.7 in. transreflective display module features reflective ratio of 35% and brightness level of 100 cd/mÂ-² in transmissive mode. With contrast ratios of 150:1 in transmissive mode and 15:1 in reflective mode, NL2432HC22-41B 3.5 in. display has luminence level of 200 cd/m² and reflective ratio of 15%. Both amorphous silicon TFT LCD modules have mode for using...

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Transistors

Power MOSFET is suited for lighting applications.

Offered in DPAK/IPAK and TO-220FP packages, STD11NM60N reduces conduction losses and optimizes efficiency of lighting applications by achieving RDS ON-resistance of 450 mOhm, max. Diode dv/dt capability and avalanche performance allow users to keep operating temperatures within typical working range. Built on MDmesh(TM) technology, 600 V device features energy-optimized driver circuit that...

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Transistors

P-Channel MOSFET optimizes low-voltage power management.

Measuring 1.0 x 1.5 x 0.65 mm, FDZ191P PowerTrench® MOSFET is capable of operating down to 1.5 V and meets all green and RoHS standards. Wafer-level chip scale package enables thermal resistance of 83°C/W and RDS(on) of 67 mW @ 4.5 V to meet performance requirements necessary for power conversion, charging, and load management in low voltage portable electronics. Package height makes...

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Transistors

UltraFET Devices offer thermal resistance.

Housed in 3 x 3 mm, molded leadless packages, N-Channel UltraFET devices come in 100, 200, and 220 V models. They are suited for primary-side switches in isolated dc/dc converter applications, such as workstations, telecom, and networking equipment. Rated at 200 V, Model FDMC2610 features Miller charge of 3.6 nC and on-resistance of 200 mW. All units are Pb-free and meet or exceed requirements of...

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Bipolar Transistors are offered in multiple package options.
Transistors

Bipolar Transistors are offered in multiple package options.

Designed for low voltage, high-speed switching applications, Low Vce (sat) bipolar junction transistors (BJTs) come in WDFN6, WDFN3, SOT-23, SOT-563, and ChipFET packages. Surface mount devices feature saturation voltage of 45 mV at 1 A and high current gain. Suited for variety of portable applications, transistors offer electrostatic discharge tolerance of more than 8,000 V and are...

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Transistors

GaN HEMTs extend reach of broadband systems.

Respectively rated at 10 and 45 W, CGH40010 and CGH40045 are general-purpose high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) that can be used to optimize efficiency of various broadband applications. They operate at up to 4 GHz with 14 dB of associated power gain and 65% drain efficiency at 28 V. Efficiency, gain, and bandwidth attributes make them suitable components...

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Transistors

Transistors suit general-purpose broadband systems.

Designed for linear and compressed amplifier circuits, 10 W CGH40010 and 45 W CGH40045 high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) suit applications in general-purpose broadband amplifiers and critical communications systems used by police, fire departments, and homeland security. They operate at up to 4 GHz with 14 dB of associated power gain and 65% drain...

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Transistors

Fujitsu to Feature World-class 65-Nanometer Process Technology for Advanced Networking, Mobile Applications at 12th Annual FSA Conference

CS200HP/200A, Part of Fujitsu's Turnkey Services for Customers, at Booth #410 SAN JOSE, Calif., 2006 FSA Suppliers Expo, Oct. 10 // -- Fujitsu Microelectronics America, Inc. (FMA), a leader in advanced technology, will feature its 65-nanometer process technology at the 2006 Fabless Semiconductor Association Suppliers Expo and Conference in San Jose, October 11. Fujitsu will be at booth 410. By...

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Transistors

GaN HEMT is intended for WiMAX applications.

Model CGH27015 15 W packaged gallium nitride high electron mobility transistor (GaN HEMT) produces 2.5 W of average output power and 24% drain efficiency over frequency range of 2.3-2.9 GHz. Device features 14.5 dB of small signal gain, and 2% error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 V.

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Simple Connection MGB with EtherNet/IP

The new MGB with EtherNet/IP is a leap forward in access door safety. Designed for easy installation, flawless performance, and long service life, it is engineered with robust features and cutting-edge technology that places it firmly at the leading edge of the door safety device industry. To learn all about the benefits of the Euchner MGB, see our video.

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