New Transistors Products

Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in X-band

TOKYO-Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of gallium arsenide (GaAs) FET widely used in microwave solid-state amplifiers for radar and satellite microwave communications in the 8GHz to 12GHz X-band frequency range. The new transistor achieves an output power of 81.3W at 9.5GHz,...

Darlington Transistors target audio amplifiers.

Housed in TO-3P package, Models STD03N and STD03P provide built-in thermal compensation diode on same die, which eliminates any delay for thermal compensation operation and any delay between thermal sensing at heat source and response at compensation area. Through decreased thermal resistance, units can achieve high power levels and withstand high voltages.

Single Transistors are made for audio amplifiers.

Designed for home and professional audio amplifiers, 2SA2151, 2SC2151A, 2SC6011, and 2SC6011A utilize thinner-die technology technique to promote power-up by minimizing thermal resistance and maximizing voltage avalanche breakdown rating. Power-handling capacity of TO-3P package (160 W) contributes to smaller space for circuit design. While suitable for multi-channel applications for AV...

Display Modules are readable in high ambient light.

Model NL2432HC17-04B 2.7 in. transreflective display module features reflective ratio of 35% and brightness level of 100 cd/m-² in transmissive mode. With contrast ratios of 150:1 in transmissive mode and 15:1 in reflective mode, NL2432HC22-41B 3.5 in. display has luminence level of 200 cd/m-² and reflective ratio of 15%. Both amorphous silicon TFT LCD modules have mode for using backlight...

Stainless Steel Baskets For Medical and Pharmaceutical Applications

This white paper provides an in-depth overview into stainless steel baskets for medical and pharmaceutical applications.

Power MOSFET is suited for lighting applications.

Offered in DPAK/IPAK and TO-220FP packages, STD11NM60N reduces conduction losses and optimizes efficiency of lighting applications by achieving RDS ON-resistance of 450 mOhm, max. Diode dv/dt capability and avalanche performance allow users to keep operating temperatures within typical working range. Built on MDmesh(TM) technology, 600 V device features energy-optimized driver circuit that...

P-Channel MOSFET optimizes low-voltage power management.

Measuring 1.0 x 1.5 x 0.65 mm, FDZ191P PowerTrench-® MOSFET is capable of operating down to 1.5 V and meets all green and RoHS standards. Wafer-level chip scale package enables thermal resistance of 83-

UltraFET Devices offer thermal resistance.

Housed in 3 x 3 mm, molded leadless packages, N-Channel UltraFET devices come in 100, 200, and 220 V models. They are suited for primary-side switches in isolated dc/dc converter applications, such as workstations, telecom, and networking equipment. Rated at 200 V, Model FDMC2610 features Miller charge of 3.6 nC and on-resistance of 200 mW. All units are Pb-free and meet or exceed requirements of...

Bipolar Transistors are offered in multiple package options.

Designed for low voltage, high-speed switching applications, Low Vce (sat) bipolar junction transistors (BJTs) come in WDFN6, WDFN3, SOT-23, SOT-563, and ChipFET packages. Surface mount devices feature saturation voltage of 45 mV at 1 A and high current gain. Suited for variety of portable applications, transistors offer electrostatic discharge tolerance of more than 8,000 V and are...

GaN HEMTs extend reach of broadband systems.

Respectively rated at 10 and 45 W, CGH40010 and CGH40045 are general-purpose high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) that can be used to optimize efficiency of various broadband applications. They operate at up to 4 GHz with 14 dB of associated power gain and 65% drain efficiency at 28 V. Efficiency, gain, and bandwidth attributes make them suitable components...

Transistors suit general-purpose broadband systems.

Designed for linear and compressed amplifier circuits, 10 W CGH40010 and 45 W CGH40045 high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) suit applications in general-purpose broadband amplifiers and critical communications systems used by police, fire departments, and homeland security. They operate at up to 4 GHz with 14 dB of associated power gain and 65% drain...

Come Alive Organics' Premium Organic Agave Provides a Healthier Choice

Come Alive Organics distributes all-natural, proprietary flavored agave for the food and beverage industry while helping children across the globe. Learn more about our agave products and our one sweet cause in this video and two-page PDF.