Transistors

Transistors

Bipolar Transistor suits tactical avionics applications.

Designed for 1,030 MHz pulsed applications, M/A-COM MAPRST1030-1KS is 1,000 W peak, class C bipolar transistor in hermetic, ceramic/metal package that tolerates 10:1 load mismatch without damage or loss in performance. Product features 8.0 dB min gain with 45% min collector efficiency on 50 Vdc supply. Power rating enhances range capabilities of avionics systems, and overall properties suit air...

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Bipolar Transistor targets 1,030 MHz avionics applications.
Transistors

Bipolar Transistor targets 1,030 MHz avionics applications.

Suited to operate in IFF/TACAN or similar short pulse formats, M/A-COM MAPRST1030-1KS features minimum gain of 8.0 dB with 45% minimum collector efficiency on 50 Vdc supply. Class C unit is rated for 1,000 W peak and housed in hermetic, ceramic/metal package that can tolerate 10:1 load mismatch without damage or loss in performance.

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Radios

Richardson Electronics to Distribute New FHSS Embedded Wireless Module from Radiotronix

April 11, 2007-LaFox, Illinois...Richardson Electronics (NASDAQ: RELL) today announced a worldwide partnership to distribute a new frequency-hopping spread spectrum (FHSS) embedded wireless module developed by Radiotronix of Oklahoma City. The Wi.232FHSS-250(TM) is the first of a new family of RF embedded modules based on the Analog Devices ADF702x RF Transceiver chips. Radiotronix, a leader in...

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Transistors

Cree's New GaN Transistors Boost WiMAX Power Amplification Efficiency by up to 50 Percent

DURHAM, NC, MARCH 20, 2007 - Cree, Inc. (Nasdaq: CREE) announced today that it is shipping sample quantities of three new gallium nitride (GaN) high electron mobility transistors (HEMT). Optimized for high efficiency, high gain and wide bandwidth, these devices provide exceptional linear power and efficiency for WiMAX and broadband wireless access applications operating between 2.3 GHz and 3.9...

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Air Amplifiers and How They Work
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Air Amplifiers and How They Work

Air amplifiers are pneumatically driven devices that use shop air to provide the motive power for increasing air pressure. This white paper provides an in-depth overview into the air amplifiers and how they work.

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Transistors

SiGe-BiCMOS Technology is offered in 12 V versions.

Suited for fabless design houses and IDMs, 0.35 Â-µm SiGe-BiCMOS process technology allows integration of 2.7, 3.3, 5, and 12 V devices on single chip without any process changes. Devices allow high operating voltages for high-frequency operations, particularly NPNs with BVceo of 14 V and ft/fmax of 15/32 GHz, and RF-PLDMOS with BVds of 18 V and ft/fmax of 11/28 GHz. Products aid in...

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Transistors

Digital Transistors consume only 2.82 mm² board area.

Tailored for use in switching, inverter, interface, and driver circuits, FJY30xx (NPN) and FJY40xx (PNP) Series integrate external resistor bias network into small form factor package, eliminating need for external resistor. Units are lead-free and meet MSL 1 qualification for moisture-sensitivity levels. Available in 1.7 x 0.98 x 0.78 mm SOT523F package, transistors are suited for use in cell...

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Transistors

GaN Transistors boost WiMAX power amplification efficiency.

Supplied in 3 x 3 mm plastic overmold QFN package, RoHS-compliant gallium nitride (GaN) high electron mobility transistors (HEMTs) suit WiMAX and broadband wireless access applications. Models CGH27015S/CGH35015S/CGH35030F supply 2.5, 2.5+, and 4 W average output, respectively, and offer either 28% or 23% drain efficiency. CGH27015S is specified over 2.3-2.9 GHz range, while other models cover...

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Transistors

FET Module comes in 56-pin, 8 x 8 mm MLP package.

Suited for use in high-current synchronous buck applications supporting Intel's DrMOS Vcore dc-dc converter standard, Model FDMF8700 FET plus driver multi-chip module is designed to thermally and electrically minimize parasitic effects at high frequencies. Product provides driver-to-FET optimization and full power-component integration. It meets requirements of joint IPC/JEDEC standard J-STD-020C...

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Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in X-band
Transistors

Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in X-band

TOKYO-Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of gallium arsenide (GaAs) FET widely used in microwave solid-state amplifiers for radar and satellite microwave communications in the 8GHz to 12GHz X-band frequency range. The new transistor achieves an output power of 81.3W at 9.5GHz,...

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Darlington Transistors target audio amplifiers.
Transistors

Darlington Transistors target audio amplifiers.

Housed in TO-3P package, Models STD03N and STD03P provide built-in thermal compensation diode on same die, which eliminates any delay for thermal compensation operation and any delay between thermal sensing at heat source and response at compensation area. Through decreased thermal resistance, units can achieve high power levels and withstand high voltages.

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Do You Have Unique Lifting Needs?
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Do You Have Unique Lifting Needs?

EZRig Cranes offers lifting solutions that are engineered for robust performance, providing the ultimate in portability. Designed for real-world lifting needs, our products are small and light with options and features that make them ideal for a broad range of applications. See our video to learn how an EZRig Crane can simplify your lifting requirements.

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