Transistors

Freescale RF Technology Breaks the 1 kW Barrier with 50 V RF Power LDMOS

New standards set for RF power transistors designed specifically for industrial, scientific, broadcast and pulsed applications MUNICH, Germany (Freescale Technology Forum) - Oct. 16, 2007 - Freescale Semiconductor has expanded its portfolio of 50V LDMOS RF power transistors with three devices that set new standards for efficiency, gain, and thermal resistance when compared to competing bipolar...

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Chipset can scale to address applications from 50-500 W.

Chipset can scale to address applications from 50-500 W.

Featuring IRS2092 integrated audio driver IC with protected PWM switching and IR's full complement of digital audio MOSFETs, chipset is suitable for Class D audio amplifiers. Based on half bridge topology, IRS2092 Audio IC integrates four essential functions for Class D design implementation including error amplifier, PWM comparator, gate driver, and robust protection circuitry. IC may be paired...

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IGBT Modules have 100-240 Vac input voltage.

Providing power module for controlling 3-phase inverters used to drive motors of residential and commercial appliances, Series SCM1100M can withstand voltages up to 600 V and feature 5-15 A output current. IC consists of 6 IGBTs, 3 pre-drive ICs, and 6 flyback diodes needed to configure main circuit of inverter, as well as bootstrap circuit (3 bootstrap diodes and 3 boot resistors) as highside...

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Current Sense Ignition IGBT suist automotive applications.

Eliminating need for high-current sense resistor, FGB3040CS minimizes power dissipation and reduces heat in automotive applications. It also eliminates gate-to-emitter input resistor, simplifying IGBT gate control. EcoSPARK-® technology enables die size small enough to fit into D-Pak, and Kelvin ground promotes current sense accuracy. Also available, ignition IGBTs FGD2N40L and ISL9V2540S3S...

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IGBT Modules come in compact SP3 packages.

IGBT Modules come in compact SP3 packages.

Designed for motor control applications, power modules feature 3-phase IGBT bridge using NPT IGBTs for 20-50 kHz frequency applications and Trench Field Stop IGBTs for 5-20 kHz applications. Current ratings are in range of 30-50 A for 600 V and 15-25 A for 1,200 V NPT IGBTs and 20-75 A for 600 V and 25-35 A for 1,200 V Trench Field Stop IGBTs. Units have 12 mm profile and 40.8 x 73.4 mm...

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Cree SiC MESFETs Cut Size, Boost Performance of New MILMEGA UHF Amplifiers

DURHAM, NC, AUGUST 28, 2007 - Cree, Inc., a leader in silicon carbide (SiC) devices, today announced that MILMEGA is using Cree MESFETs to provide the RF power in its new line of UHF power amplifiers. SiC MESFETs provide greater power density than conventional semiconductor materials, allowing Cree customers to achieve greater efficiency and pack more capabilities into a smaller form factor....

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IGBT suits 50-400 Hz industrial applications.

Featuring saturation voltage of 1.1 V typ, Model FGH30N60LSD is designed to optimize system efficiency while meeting low-frequency requirements. IGBT can be combined with FCH47N60F SuperFET(TM) FRFET-®, which offers operating frequency of up to 250 kHz an on-resistance of 0.062 W (typ), for additional energy efficiency in applications that use both low- and high-frequency switches. MOS-gated...

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Driver Transistor suits Mode-S avionics transmitters.

Designed to complement MDS Series of high power transistors for Mode-S avionics applications, Model MDS150 provides 150 W of output power at 1,030/1,090 MHz with Mode-S pulsing. Class C biased, bipolar transistor runs on 50 V, enabling it to be used with existing power supplies running on 50-52 V. Die utilizes gold metallization and integral emitter ballast resistors.

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IGBTs suit high switching frequency applications.

IGBTs suit high switching frequency applications.

Employing NPT technology, Thunderbolt HS(TM) insulated gate bipolar transitor (IGBT) Series is available as single devices or packaged with DQ Series Combi diode. Parameter distribution, combined with positive temperature coefficient, facilitate parallelling of Thunderbolt HS IGBTs, while switching loss enables operation at switching frequencies over 100 kHz. Rated at 600 V and 2.8 V typ...

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Darlington Transistors feature optimized thermal stability.

Housed in TO-3P package, Models STD01N/P and STD02N/P are designed specifically for home and professional audio amplifier markets. Units provide built-in thermal compensation diode on same die, eliminating any delay for thermal compensation operation and any delay between thermal sensing at heat source and response at compensation area.

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