Transistors

IMEC Increases Performance of High-K Metal Gate Planar CMOS and FinFETs

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING - WASHINGTON, DC WASHINGTON, DC, USA - DECEMBER 11, 2007 - At today's IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node. Low threshold voltage (Vt) is achieved by applying a...

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Intel's Fundamental Advance in Transistor Design Extends Moore's Law, Computing Performance

Abstract: Built using an entirely new transistor formula that alleviates the wasteful electricity leaks that threaten the pace of future computer innovation, Intel Corporation today unveiled 16 server and high-end PC processors. In addition to increasing computer performance and saving energy use, these processors also eliminate eco-unfriendly lead and, in 2008, halogen materials. Santa Clara, CA...

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Vishay Semiconductor Products Now Available from Digi-Key

Malvern, Pennsylvania and Thief River Falls, Minnesota - December 18, 2007 Vishay Intertechnology, Inc. (NYSE: VSH) and Digi-Key Corporation are pleased to announce that Vishay's extensive portfolio of semiconductor products, which includes MOSFETs, diodes, rectifiers, RF transistors, optoelectronics, and selected ICs, is now available from Digi-Key. With this major enhancement to its line card,...

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RFMD® Extends Leadership In Wireless Front Ends with Introduction of New Enabling Technologies

NEW YORK, Nov. 15-- RF Micro Devices, (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, will announce at its analyst day today the introduction of new technologies developed by RFMD to enable unprecedented levels of functional integration in RF applications. The new technologies include hermetically sealed wafer level...

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Nitronex's 5W GaN on Si RF Power Transistor Ready for Volume Production

Nitronex's 5W GaN on Si RF Power Transistor Ready for Volume Production

GaN pre-driver completes full amplifier line-up... Durham, N.C. (November 12, 2007) - Nitronex, the global leader in gallium nitride on silicon (GaN on Si) RF power transistors for the wireless infrastructure, broadband and military markets, has developed a 28V, 5W class high electron mobility transistor (HEMT) designed for broadband applications from DC - 6.0 GHz. Designed using Nitronex's...

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Mouser Electronics Signs Distribution Agreement with IXYS Corporation

Inventory Includes Full Portfolio of Semiconductor Products Mansfield, Texas, USA - November 12, 2007 - Mouser Electronics, Inc., known for its rapid introduction of the newest products, today announced it has signed a distribution agreement with IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors and mixed-signal ICs. Mouser will stock the full line of IXYS power MOSFETs, IGBTs,...

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Analog FET Pre-Driver addresses automotive motor control.

Analog FET Pre-Driver addresses automotive motor control.

Supplied in Pb-free packaging, MC33927 enables precision control of 3-phase motor speed, torque, and power in automotive and industrial applications. This field effect transistor (FET) pre-driver supports 6-58 V range, offers programmable dead time delay from 0 to more than 10.5 -µsec, and is capable of 0-100% PWM control of load. Product interfaces to 5.0 or 3.0 V MCU via 6 direct input control...

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VELOX Semiconductor Awarded Advanced Technology Funding

VELOX Semiconductor Awarded Advanced Technology Funding

Company Will Develop 1200 Volt, 100 Amp, Gallium Nitride-on-Silicon Transistors for Automotive and Power Supply Applications October 9, 2007 - Somerset, NJ - VELOX Semiconductor, a leading manufacturer of Gallium Nitride (GaN) transistors and diodes, announces an ATP (Advanced Technology Program) award from the U. S. Department of Commerce's National Institute of Standards and Technology (NIST)....

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Gate Driver IC provides 4 A current driving capability.

Featuring high-side driver operation with negative VS swings up to -9.8 V and common-mode dv/dt noise canceling circuit, Model FAN7371 provides noise immunity and is suited for driving MOSFETs and IGBTs in applications up to 600 V. Unit provides under-voltage lockout for VBS and built-in 25 V shunt regulator. For optimal efficiency, driver offers floating channel designed for bootstrap operation...

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VELOX Semiconductor Awarded ATP Development Funds

VELOX Semiconductor Awarded Advanced Technology Funding o Company Will Develop 1200 Volt, 100 Amp, Gallium Nitride-on-Silicon Transistors for Automotive and Power Supply Applications October 9, 2007 - Somerset, NJ - VELOX Semiconductor, a leading manufacturer of Gallium Nitride (GaN) transistors and diodes, announces an ATP (Advanced Technology Program) award from the U. S. Department of...

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