Transistors

Trench IGBTs minimize power dissipation.

Trench IGBTs minimize power dissipation.

Designed to reduce power dissipation up to 30% in UPS and solar inverter applications up to 3 kW, 600 V Insulated Gate Bipolar Transistors utilize field stop trench technology to minimize conduction and switching losses, and are optimized for switching at 20 kHz. Co-packaged with ultrafast soft recovery diodes, series has lower collector-to-emitter saturation voltage and total switching energy...

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RF Power Transistor suits high peak-to-average applications.

RF Power Transistor suits high peak-to-average applications.

Designed using SIGANTIC-® NRF1 process, NPT1004 delivers 45 W at 28 V for high PAR and pulsed applications. Device combines broadband DC to 4 GHz GaN-on-Si high electron mobility transistor with thermally enhanced plastic package to offer solution for light thermal load power applications. RoHS-compliant transistor delivers 5 W average power for 2.5-2.5 GHz WiMAX applications and 4.5 W for...

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Toshiba Announces Low Voltage, Low Resistance Power MOSFETs for Notebook PC Battery Protection Circuit Module Applications

Broad Line-up provides High Power Output with Low R(DS)(ON) in Small, Thin Packages IRVINE, Calif., Feb. 27 - Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, announced a broad selection of power MOSFETs in its Low Voltage, Low Resistance Series targeted for applications in lithium-ion batteries in...

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Digi-Key Corporation Now Stocking SiC RF Power MESFETs from Cree

Thief River Falls, Minnesota and and Durham, North Carolina - March 4, 2008 - Electronic component distributor Digi-Key Corporation and Cree, Inc. (Nasdaq: CREE), a leader in wide bandgap transistors and radio frequency integrated circuits (RFICs), announced today that Cree's silicon carbide (SiC) Metal-Semiconductor Field-Effect Transistors (MESFETs) are now in stock and ready for shipment from...

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NEC Succeeds in Fabrication of CNT Transistor Using Coating Process; Confirms Feasibility of Environmentally Friendly Electronic Devices Using CNTs

Tokyo, Japan, Feb 13, 2008 - NEC Corporation today announced the successful development of a carbon nanotube (CNT) transistor using a coating process. The basic operation of the new transistor with advanced characteristics has been verified, confirming its application in the printed electronics field. Main features of the new CNT transistors (1) Based on an NEC device model, design guidelines...

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IGBT Modules efficiently minimize design space.

Offering 85-253 Vac input voltage and 1.5-3 A output current, SLA6800MP and SMA6800MP series withstand voltages to 500 V (MOSFET breakdown voltage) and 600 V (IGBT breakdown voltage). This results in Inverter Power Module suited for controlling 3-phase motor inverters used to drive motors of residential and commercial appliances. IC consists of necessary power elements, 6 MOSFETS or 6 IGBTs, and...

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Power MOSFETs are designed to exhibit minimal RDS(ON).

Power MOSFETs are designed to exhibit minimal RDS(ON).

With on resistance from 2.1-5.5 mW, 30-40 V MOSFETs help optimize power dissipation and efficiency of high-power automotive systems. RoHS-compliant products utilize Pb-free terminals and meet automotive industry Q101 standard. These MOSFETs are also characterized for moisture sensitivity in accordance with Pb-free reflow requirements of joint IPC/JEDEC standard J-STD-020. Series, comprised of 11...

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Gate Driver IC includes ground fault protection.

Gate Driver IC includes ground fault protection.

Featuring extra channel for PFC switch or inverter brake, 3-phase Model IRS26302D is suited for medium power appliance motor control applications. Device integrates power MOSFET/IGBT gate drivers with 3 high-side and 3 low-side referenced output channels to provide 200/350 mA drive current at up to 20 V MOS gate drive capability, operating up to 600 V. Negative Vs immunity circuitry is...

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FET Modules are based on Intel® specification for DrMOS.

Integrating 1 driver IC, 3 power MOSFETs, and 1 Schottky diode, Models FDMF8704 and FDMF8704V come in 8 x 8 mm MLP package. Suited for applications such as servers that need to maximize efficiency, Model FDMF8704 is capable of operating at 1 MHz, eliminating passive components to reduce board space, while Model FDMF8704V features built-in voltage regulator block for applications with only 12 V...

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Video: Intel Marks 60th Anniversary of the Transistor

SANTA CLARA, Calif., Dec. 11 -- Intel Corporation on Dec. 16 celebrates the 60th anniversary (http://www.intel.com/pressroom/kits/events/60th_anniversary) of the transistor, the building block of today's digital world. Invented by Bell Labs and considered one of the most important inventions of the 20th century, transistors are found in many consumer electronics and are the fundamental component...

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