Transistors

Power Switch is rated for 2,200 V breakdown voltage.
Switches

Power Switch is rated for 2,200 V breakdown voltage.

With 150 kHz maximum switching frequency and 3 A maximum rated current, STC03DE220HV ESBT (emitter-switched bipolar transistor) allows designers to use single-switch flyback topology in universal-input converters operating from 90-690 Vac. Unit can achieve equivalent on-resistance of 0.33 W from collector to source. Suited for SMPS applications, it enables designers to build quasi-resonant...

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Transistors

RF Power Transistor targets UHF broadcast applications.

Designed for TV transmitters utilizing analog/digital modulation formats, MRF6VP3450H delivers more than 450 W peak power at P1 dB with 50% efficiency across UHF band. Using DVB-T 64 QAM OFDM signal at 90 W average output power, typical 860 MHz 50 V performance is 28% drain efficiency and 23 dB gain, with adjacent channel power ratio at 4 MHz offset of -62 dBc in 4 kHz bandwidth. Rugged 50 V...

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IGBTs target induction heating applications.
Transistors

IGBTs target induction heating applications.

Using Field Stop structure and avalanche-rugged Trench gate technology, 1,200 V Models FGA20N120FTD and FGA15N120FTD offer optimal tradeoffs between conduction losses and switching losses, maximizing efficiency. Built-in fast-recovery diode is optimized for Zero Voltage Switching technology. Utilizing lead-free terminals, both models have been characterized for moisture sensitivity in accordance...

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Transistors

Bipolar Junction Transistors feature low saturation voltage.

Offering saturation voltages of 0.5 and 0.23 V, respectively, Models FJD5555 and FJD5553 are suited for electronic ballast, power supply, and industrial designs. Both feature breakdown voltage of 1,050 V, which is important for lighting applications that require safe operating areas. Housed in DPAK 64 mm-² package, transistors utilize lead-free terminals and have been characterized for moisture...

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Transistors

IGBTs target energy-saving ballasts and converters.

Utilizing lifetime-control techniques, PowerMESH(TM) STGxL6NC60D Series minimizes energy loss during turn off, allowing designers to use IGBT technology in energy-sensitive circuits such as 70-150 W lighting ballasts operating well above 20 kHz. Switching performance also allows designers to use IGBTs with hard-switching topologies as well as with resonant circuits. Lower turn-off energy enables...

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Phototransistors come in miniature surface mount packages.
Electromagnetic Field (EMF) Sensors / Detectors / Transducer

Phototransistors come in miniature surface mount packages.

Phototransistors in miniature surface mount packages for automatic mounting and position sensing equipment. LAS VEGAS, NV (May 6, 2008) - Providing design engineers with a family of infrared detectors with a variety of viewing angles, TT electronics OPTEK Technology has expanded its line of surface mount phototransistors. The infrared photodetector product line includes both silicon...

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Transistors

Phototransistors are compatible with lead-free reflow soldering.

Featuring 2µs Rise and Fall Times and ±60° Angle of Half Intensity, Devices are 100% Compatible with Current TEMT Series for Easy Replacement MALVERN, PENNSYLVANIA - April 4, 2008 - Vishay Intertechnology, Inc. (NYSE: VSH) continues to broaden its optoelectronics portfolio with the release of a new series of wide-angle phototransistors in a PLCC-2 surface mount package that is compatible with...

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Transistors

IGBT Modules range from 75-200 A.

Consisting of eight 600 and 1,200 V models, Half-Bridge IGBT Series features standard punch-through, Generation 4, and Generation 5 non-punch-through technologies for hard switching operating frequencies up to 60 kHz and greater than 200 kHz in resonant mode. Housed in Int-A-Pak packages, devices are optimized for isolated and non-isolated converters, switches, inverters, and choppers in...

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Trench IGBTs minimize power dissipation.
Transistors

Trench IGBTs minimize power dissipation.

Designed to reduce power dissipation up to 30% in UPS and solar inverter applications up to 3 kW, 600 V Insulated Gate Bipolar Transistors utilize field stop trench technology to minimize conduction and switching losses, and are optimized for switching at 20 kHz. Co-packaged with ultrafast soft recovery diodes, series has lower collector-to-emitter saturation voltage and total switching energy...

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RF Power Transistor suits high peak-to-average applications.
Transistors

RF Power Transistor suits high peak-to-average applications.

Designed using SIGANTIC-® NRF1 process, NPT1004 delivers 45 W at 28 V for high PAR and pulsed applications. Device combines broadband DC to 4 GHz GaN-on-Si high electron mobility transistor with thermally enhanced plastic package to offer solution for light thermal load power applications. RoHS-compliant transistor delivers 5 W average power for 2.5-2.5 GHz WiMAX applications and 4.5 W for...

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