Transistors

Transistors

API Nanotronics Announces $4.7 Million Order from Leading US Defense Contractor Rockwell Collins

NEW YORK, NY--(September 02, 2008) - API Nanotronics Corp. (OTCBB: APIO) ( API") (the "Company"), a leading supplier of electronic components and nanotechnology research and development to the defense and communications sectors, today announced a $4.7 million order from Rockwell Collins for custom communication components. The order, received by API's National Hybrid division, is for a series of...

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Rectifiers (Diodes)

Transistors and Diodes suit space-constrained applications.

Offered in SOT-723, SOT-963, and SOT-1123 packages measuring 1.0 x 0.6 x 0.37 mm, general purpose and bias resistor transistors are lead- and halogen-free, and suitable for mobile handsets. NSR Schottky Diodes, supplied in SOD-923 package, are available up to 500 mA with reverse blocking voltage to 70 V. Housed in SOD-923 package measuring 1.0 x 0.6 x 0.4 mm, NZ9F Series Zener Diodes feature...

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Transistors

Bipolar Transistors suit pulsed avionics/radar applications.

Operating over 960-1,215 MHz bandwidth, M/A-COM MAPRST0912-50 is 50 Wpk Class C, silicon bipolar pulse power transistor that has minimum gain of 9.0 dB with 40% minimum collector efficiency on 50 Vdc supply, while M/A-COM MAPRST0912-350 is rated at 350 Wpk with 40 W drive and features minimum gain of 9.4 dB with 45% minimum collector efficiency. With minimum gain of 9 dB with 45% minimum...

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Transistors

GaN Power Transistors promote space and power conservation.

Delivered as discrete die-level devices, TGF2023-xx gallium nitride (GaN) power transistors helps conserve power and space in smaller form factor applications. They operate up to 18 GHz, have 55% power added efficiency (PAE), and produce up to 90 W of output power. Areas of use include high-frequency applications such as mobile base station, defense, and space communications systems.

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Transistors

HV-HBT Transistors consolidate 3G/4G mobile infrastructure.

Integrating 2 stages into one package, 28 V HBT (heterojunction bipolar transistor) amplifiers AP631 (4 W) and AP632 (7 W) are suited as pre-drivers and drivers for RF section of base station radio. Linearity minimizes additional signal distortion for repeater applications when used in final amplifier stages and reduces backoff power requirements to minimize distortion from high PAR (peak to...

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Transistors

HBT Chip has breakdown voltage of 5 V.

Utilizing 110 GHz fT Silicon Germanium processing technology, NESG303100G SiGe Heterojunction Bipolar Transistor (HBT) is suited for both oscillator and LNA applications in 2.4-5.8 GHz mobile communications designs. Features include maximum stable gain of 21.5 dB at 2 GHz and 10.0 dB at 5.2 GHz, noise figure of 0.8 dB at 2 GHz and 0.95 dB at 5.2 GHz, and hFE of 220-380.

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Transistors

FET is suited for use as buffer amplifier.

Operating at 12 GHz from 3 V supply, NE3515S02 Hetero-Junction FET delivers P1 dB of +14 dBm with 14 dB linear gain while maintaining noise figure less than 0.5 dB, typ. Designed for DBS LNBs and high dynamic range front end applications, unit is housed in RoHS-compliant S02, hollow plastic surface-mount package with footprint of 3.2 x 3.2 mm that features recessed leads for low inductance.

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Transistors

IGBT Modules lend to power efficient designs.

Comprised of 3 types, MIPAQ(TM) modules promote efficient power inverter designs in UPS, industrial drives, solar power plants, and air conditioning systems. All MIPAQ products feature IGBT (Insulated Gate Bipolar Transistor) 6-pack configuration. MIPAQ base module integrates shunts; MIPAQ sense module offers additional current measurement feature that is fully digital with galvanically isolated...

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Transistors

High-Voltage IGBT promotes power and motor control.

Offering accelerated switching and minimal conduction losses, short-circuit rated XPT is designed for parallel operation. Merging of IXYS cell design with XPT (Xtreme light Punch Through) wafer technology optimizes static and dynamic behavior as well as reliable operation during power turn-off testing. With low Vce(sat) of 1.8 V at 25°C, 1,200 V XPT IGBTs are rated at 10, 15, 35, and 50 A...

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Single-Phase High-Voltage ICs suit motor drive applications.
Electronic Drivers

Single-Phase High-Voltage ICs suit motor drive applications.

Available in 8-lead SOIC, IRS260xD Series power MOSFET and IGBT drivers are designed for sinusoidal and trapezoidal motor control. Model IRS2607D high- and low-side driver features outputs in phase with inputs. With 540 nsec internal dead-time, IRS2608D half-bridge driver offers high-side output in phase with HIN input and low-side output out of phase with LIN input, while IRS2609D features...

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