Transistors

AWR and austriamicrosystems Introduce Open Access Based SiGe Process Design Kit for Analog Office® RFIC Design Environment

London, England and Unterpremstaetten, Austria - November 3, 2008 - AWR and austriamicrosystems AG today introduced an Open Access based process design kit (PDK) for austriamicrosystems S35 0.35m silicon germanium (SiGe) BiCMOS process technology that is optimized for circuits operating up to 10 GHz and beyond. The design kit lets users take full advantage of the industry-leading fabrication...

Read More »

MOSFETs dissipate 1.4 W of power.

Housed in 2 x 2 x 0.55 mm MLP package, MicroFET FDMA1027 consists of 20 V P-Channel PowerTrench-® MOSFET, while FDFMA2P853 consists of 20 V P-Channel PowerTrench MOSFET with Schottky diode. Units address needs of battery-charging and load-switching as well as boost and dc-dc conversion. Utilizing lead-free terminals, RoHS-compliant devices have been characterized for moisture sensitivity in...

Read More »

GaN-on-Si RF Power Transistor covers 5.1 to 5.8 GHz ranges.

Pb-free and RoHS-compliant, NPTB00004 gallium nitride on silicon (GaN-on-Si) RF power transistor come in plastic over-molded PO150S package with exposed thermal pad and includes frequencies between 5.1-5.2 GHz and 5.7-5.8 GHz. This 28 V, 5 W class high electron mobility transistor (HEMT) achieves 27 dBm average output power at 2% EVM in 5.2 GHz WiMAX systems and 28 dBm average output power at 2%...

Read More »

API Nanotronics Announces $4.7 Million Order from Leading US Defense Contractor Rockwell Collins

NEW YORK, NY--(September 02, 2008) - API Nanotronics Corp. (OTCBB: APIO) ( API ) (the Company ), a leading supplier of electronic components and nanotechnology research and development to the defense and communications sectors, today announced a $4.7 million order from Rockwell Collins for custom communication components. The order, received by API's National Hybrid division, is for a series of...

Read More »

Transistors and Diodes suit space-constrained applications.

Offered in SOT-723, SOT-963, and SOT-1123 packages measuring 1.0 x 0.6 x 0.37 mm, general purpose and bias resistor transistors are lead- and halogen-free, and suitable for mobile handsets. NSR Schottky Diodes, supplied in SOD-923 package, are available up to 500 mA with reverse blocking voltage to 70 V. Housed in SOD-923 package measuring 1.0 x 0.6 x 0.4 mm, NZ9F Series Zener Diodes feature...

Read More »

Bipolar Transistors suit pulsed avionics/radar applications.

Operating over 960-1,215 MHz bandwidth, M/A-COM MAPRST0912-50 is 50 Wpk Class C, silicon bipolar pulse power transistor that has minimum gain of 9.0 dB with 40% minimum collector efficiency on 50 Vdc supply, while M/A-COM MAPRST0912-350 is rated at 350 Wpk with 40 W drive and features minimum gain of 9.4 dB with 45% minimum collector efficiency. With minimum gain of 9 dB with 45% minimum...

Read More »

GaN Power Transistors promote space and power conservation.

Delivered as discrete die-level devices, TGF2023-xx gallium nitride (GaN) power transistors helps conserve power and space in smaller form factor applications. They operate up to 18 GHz, have 55% power added efficiency (PAE), and produce up to 90 W of output power. Areas of use include high-frequency applications such as mobile base station, defense, and space communications systems.

Read More »

HV-HBT Transistors consolidate 3G/4G mobile infrastructure.

Integrating 2 stages into one package, 28 V HBT (heterojunction bipolar transistor) amplifiers AP631 (4 W) and AP632 (7 W) are suited as pre-drivers and drivers for RF section of base station radio. Linearity minimizes additional signal distortion for repeater applications when used in final amplifier stages and reduces backoff power requirements to minimize distortion from high PAR (peak to...

Read More »

HBT Chip has breakdown voltage of 5 V.

Utilizing 110 GHz fT Silicon Germanium processing technology, NESG303100G SiGe Heterojunction Bipolar Transistor (HBT) is suited for both oscillator and LNA applications in 2.4-5.8 GHz mobile communications designs. Features include maximum stable gain of 21.5 dB at 2 GHz and 10.0 dB at 5.2 GHz, noise figure of 0.8 dB at 2 GHz and 0.95 dB at 5.2 GHz, and hFE of 220-380.

Read More »

FET is suited for use as buffer amplifier.

Operating at 12 GHz from 3 V supply, NE3515S02 Hetero-Junction FET delivers P1 dB of +14 dBm with 14 dB linear gain while maintaining noise figure less than 0.5 dB, typ. Designed for DBS LNBs and high dynamic range front end applications, unit is housed in RoHS-compliant S02, hollow plastic surface-mount package with footprint of 3.2 x 3.2 mm that features recessed leads for low inductance.

Read More »

All Topics