Transistors

Transistors

Microwave Transistors target telecommunications applications.

Designed for 1,800-2,300 MHz frequency range, CGH21120F transistors provide over 110 W peak CW power at 70% efficiency, with gain of 16 dB at 28 V. Model CGH25120F is optimized for 2,300 - 2,700 MHz range. Both single, input-prematched GaN HEMT transistors can be used for DCS; PCS, both GSM and CDMA; W-CDMA; and LTE, providing more than 120 W saturated power. With high degree of digital...

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Transistors

TrenchFET® Power MOSFET features backside insulation.

Supplied in chipscale MICRO FOOT® package, Si8422DB has 2-mil backside coating that insulates top of 1.55 x 1.55 x 0.64 mm package to electrical shorts created by temporary contact with moving parts in applications with thin height requirements. This 20 V, n-channel MOSFET can be placed where other items may be directly above it and is optimized for power amplifier, battery, and load...

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Transistors

Toshiba Adds Family of High-Voltage Power Mosfets Using Advanced π-MOS Vii Process Technology for AC/DC and Ballast Applications

500V and 600V MOSFETs Combine Advanced Process Technology with Optimized Planar Cell Structure to Increase Power Density and Efficiency IRVINE, Calif., January 20, 2009 - Toshiba America Electronic Components, Inc. (TAEC)* today introduced a new series of high-voltage ð-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and...

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Transistors

RF Power Transistor suits commercial aerospace applications.

Optimized for HF to UHF communications, 50 V Model MRF6V4300N meets requirements of radar, avionics, and air traffic management systems. Unit delivers RF output power of 300 W CW from 10-600 MHz, and at 450 MHz, device has gain of 22 dB and 60% efficiency. Housed in RoHS-compliant, over-molded plastic package, LDMOS RF power transistor features low thermal resistance of 0.24°C/W, which...

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Transistors

Low VCE(SAT) Dual Transistors come in 3 x 2 mm package.

Low VCE(SAT) transistors are packaged in TLM832D(TM) Tiny Leadless Module, which has power dissipation of 1.65 W and is optimized for space conservation. Specific models include CTLM3410-M832D (Dual, NPN); CTLM7410-M832D (Dual, PNP); and CTLM3474-M832D (Complementary NPN and PNP) devices. Featuring typical VCE(SAT) of 20 mV (NPN) and 25 mV (PNP) at 50 mA, all devices are rated at 40 Volts VCBO,...

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Transistors

Microwave Transistor suits military applications.

Consisting of single, unmatched GaN HEMT die, Series CGH40120F microwave transistor provides minimum of 120 W of saturated output power at 28 V, in compact, industry-standard, flanged ceramic-metal package. It is suited for general purpose military applications such as electronic warfare, tactical communications, radar, instrumentation, and direct video broadcast.

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Transistors

HVVFET Power Transistors suit UHF band radar applications.

Operating across 420-470 MHz band, HVV0405-175 offers UHF radar system designers fully qualified 175 W RF power transistor with 25 dB max gain. Part No. HVV0912-150, rated at 150 W, operates from 960-1,215 MHz, is designed for ground-based Distance Measuring Equipment (DME) systems, and delivers 20 dB power gain. Both parts use High Voltage Vertical Field Effect Transistor (HVVFET(TM))...

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Miscellaneous Software

AWR and austriamicrosystems Introduce Open Access Based SiGe Process Design Kit for Analog Office® RFIC Design Environment

London, England and Unterpremstaetten, Austria - November 3, 2008 - AWR and austriamicrosystems AG today introduced an Open Access based process design kit (PDK) for austriamicrosystems S35 0.35m silicon germanium (SiGe) BiCMOS process technology that is optimized for circuits operating up to 10 GHz and beyond. The design kit lets users take full advantage of the industry-leading fabrication...

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Transistors

MOSFETs dissipate 1.4 W of power.

Housed in 2 x 2 x 0.55 mm MLP package, MicroFET FDMA1027 consists of 20 V P-Channel PowerTrench® MOSFET, while FDFMA2P853 consists of 20 V P-Channel PowerTrench MOSFET with Schottky diode. Units address needs of battery-charging and load-switching as well as boost and dc-dc conversion. Utilizing lead-free terminals, RoHS-compliant devices have been characterized for moisture sensitivity in...

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Transistors

GaN-on-Si RF Power Transistor covers 5.1 to 5.8 GHz ranges.

Pb-free and RoHS-compliant, NPTB00004 gallium nitride on silicon (GaN-on-Si) RF power transistor come in plastic over-molded PO150S package with exposed thermal pad and includes frequencies between 5.1-5.2 GHz and 5.7-5.8 GHz. This 28 V, 5 W class high electron mobility transistor (HEMT) achieves 27 dBm average output power at 2% EVM in 5.2 GHz WiMAX systems and 28 dBm average output power at 2%...

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