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Transistors

Power Transistors (30 V) are optimized for power density.

Able to achieve 1.6 mW (typ) RDS(ON) in 5 x 6 mm PowerFLAT(TM) package, STL150N3LLH6 utilizes STripFET(TM) VI DeepGATE(TM) technology and increases energy efficiency for power converters in products such as computers and telecom/networking equipment. Gate charge lets engineers use higher switching frequencies and specify smaller passive components, such as inductors and capacitors. Another SMT...

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Gate Drivers control power semiconductor applications.

Gate Drivers control power semiconductor applications.

Incorporating isolated power supplies and protection features required for safe operation of power stages, IGBT and SCR Gate Drivers include isolated analog feedback of critical power stage parameters, DC bus voltage, output current, and device temperature. IGBT gate drivers control 2-6 IGBTs at currents in excess of 1,400 A, while SCR gate drivers control up to 12 SCRs, making them suited for ac...

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Vishay's TrenchFET® Gen III Family of Power MOSFETs Selected as Finalist in EDN's 19th Annual Innovation Awards

MALVERN, PENNSYLVANIA - February 12, 2009 - Vishay Intertechnology, Inc. today announced that its TrenchFET® Gen III family of power MOSFETs was selected from hundreds of nominations to be a finalist for this year's EDN Innovation Awards in the Power Semiconductors category. Instituted in 1990, EDN magazine's Innovation Awards honor the people, products, and technologies that have shaped the...

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Microwave Transistors target telecommunications applications.

Designed for 1,800-2,300 MHz frequency range, CGH21120F transistors provide over 110 W peak CW power at 70% efficiency, with gain of 16 dB at 28 V. Model CGH25120F is optimized for 2,300 - 2,700 MHz range. Both single, input-prematched GaN HEMT transistors can be used for DCS; PCS, both GSM and CDMA; W-CDMA; and LTE, providing more than 120 W saturated power. With high degree of digital...

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How to Choose the Right Adhesive Tape for Your Application
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How to Choose the Right Adhesive Tape for Your Application

With a considerable number of adhesive materials, applications and methods, there are many options to consider when choosing an adhesive tape. As NADCO® is a leading manufacturer of custom tapes and labels; we took our years of experience to create this handy selection guide on choosing the right adhesive tape for your application.

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TrenchFET® Power MOSFET features backside insulation.

Supplied in chipscale MICRO FOOT-® package, Si8422DB has 2-mil backside coating that insulates top of 1.55 x 1.55 x 0.64 mm package to electrical shorts created by temporary contact with moving parts in applications with thin height requirements. This 20 V, n-channel MOSFET can be placed where other items may be directly above it and is optimized for power amplifier, battery, and load switching...

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RF Power Transistor suits commercial aerospace applications.

Optimized for HF to UHF communications, 50 V Model MRF6V4300N meets requirements of radar, avionics, and air traffic management systems. Unit delivers RF output power of 300 W CW from 10-600 MHz, and at 450 MHz, device has gain of 22 dB and 60% efficiency. Housed in RoHS-compliant, over-molded plastic package, LDMOS RF power transistor features low thermal resistance of 0.24-

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Low VCE(SAT) Dual Transistors come in 3 x 2 mm package.

Low VCE(SAT) transistors are packaged in TLM832D(TM) Tiny Leadless Module, which has power dissipation of 1.65 W and is optimized for space conservation. Specific models include CTLM3410-M832D (Dual, NPN); CTLM7410-M832D (Dual, PNP); and CTLM3474-M832D (Complementary NPN and PNP) devices. Featuring typical VCE(SAT) of 20 mV (NPN) and 25 mV (PNP) at 50 mA, all devices are rated at 40 Volts VCBO,...

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Microwave Transistor suits military applications.

Consisting of single, unmatched GaN HEMT die, Series CGH40120F microwave transistor provides minimum of 120 W of saturated output power at 28 V, in compact, industry-standard, flanged ceramic-metal package. It is suited for general purpose military applications such as electronic warfare, tactical communications, radar, instrumentation, and direct video broadcast.

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HVVFET Power Transistors suit UHF band radar applications.

Operating across 420-470 MHz band, HVV0405-175 offers UHF radar system designers fully qualified 175 W RF power transistor with 25 dB max gain. Part No. HVV0912-150, rated at 150 W, operates from 960-1,215 MHz, is designed for ground-based Distance Measuring Equipment (DME) systems, and delivers 20 dB power gain. Both parts use High Voltage Vertical Field Effect Transistor (HVVFET(TM))...

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Oilfield Improvements® Wheeled Rod Guide® Couplings Celebrate 35th Anniversary
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Oilfield Improvements® Wheeled Rod Guide® Couplings Celebrate 35th Anniversary

For over 35 years our Wheeled Rod Guide Couplings, have been at work in oil fields across the globe. Our products are engineered to extend the service life of sucker rods and tubing, delivering cutting-edge innovation that enhances oilfield operation, maximizes output, and enhancing overall operations. To learn about the advantages of using Wheeled Rod Guide Couplings in your wells, see our video.

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