Transistors

Power MOSFETs offer VDS range from 8-30 V.

Power MOSFETs offer VDS range from 8-30 V.

Housed in thermally enhanced PowerPAK-® SC-75 package measuring 1.6 x 1.6 x 0.8 mm, 30 V Model SiB408DK and 20 V Model SiB412DK feature on-resistance as low as 40 mW at 10 V and 34 mW at 4.5 V, respectively. RoHS-compliant n-channel TrenchFET-® power MOSFETs are suitable for load, PA, and battery switches in portable electronics. Model SiB408DK can also be used for load switching in notebook...

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RF Power Transistors target TD-SCDMA wireless networks.

Providing 50 W peak RF output power, MRF7P20040H LDMOS FET features drain efficiency of 43% and 18 dB gain at 10 W average output. Multi-stage power amplifier IC, Model MD7IC2050N, provides 70 W peak RF output power, drain efficiency of 35%, and 29 dB gain at 10 W output. Designer can select discrete, 3-stage PA configuration with MRF7P20040H as final amplifier, or MD7IC2050N IC in 2-stage PA...

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Power MOSFET features 6.1 mW RDS(on) in SO-8 package.

Power MOSFET features 6.1 mW RDS(on) in SO-8 package.

Model SiE876DF is 60 V device available in SO-8 PolarPAK-® package that features lead-frame, encapsulated design. Maximum RDS(on) is 6.1 mW at 10 V gate drive while drain-source voltage rating is under 150 V. Incorporating TrenchFET-® silicon which provides low conduction losses, n-channel device includes double-sided cooling for optimal thermal performance in high-current applications. It is...

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Power MOSFET optimizes on-resistance in SO-8 footprint.

Power MOSFET optimizes on-resistance in SO-8 footprint.

Supplied in PowerPAK-® SO-8 package, Siliconix Si7145DP may be used as adaptor switch and for load switching applications in notebook computers and industrial/general systems. This 30 V p-channel power MOSFET offers max on-resistance down to 2.6 mW at 10 V gate drive and 3.75 mW at 4.5 V. On-resistance values help lower conduction losses, promoting power conservation and prolonging battery life...

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Asymmetric Dual Power MOSFET comes in compact package.

Asymmetric Dual Power MOSFET comes in compact package.

Delivered as co-packaged, asymmetric power MOSFET pair, SiZ700DT reduces space required for high- and low-side power MOSFETs in DC/DC converters. Halogen-free solution combines low-side and high-side MOSFET in one 6 x 3.7 x 0.75 mm PowerPAIR(TM) package while obtaining low on-resistance (5.8 mX at 10 V) and high max current (13.9 A at 70-

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Power MOSFET features 1.2 mW RDS(on) at 10 V.

Power MOSFET features 1.2 mW RDS(on) at 10 V.

Model SiR494DP 12 V TrenchFET-® Gen III Power MOSFET, also featuring 1.7 mW at 4.5 V gate drive, offers RDS(on) x gate charge of 85 nC at 4.5 V. Used as low-side MOSFET in synchronous buck converters with input of 3.3-5 V, n-channel MOSFET provides VGS of -

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Power MOSFETs feature 0.270 W RDS(on).

Power MOSFETs feature 0.270 W RDS(on).

Model SiHP18N50C with TO-220, SiHF18N50C with TO-220 FULLPAK, and SiHG20N50C with TO-247 packages provide 500 V rating and 0.270 W maximum RDS(on) at 10 V gate drive. Lead-free MOSFETs also feature gate charge of 65 nC, with gate charge x RDS(on) of 17.75 nC. Peak current handling is 72 A pulsed and 18 A continuous. High single-pulse and repetitive avalanche energy capabilities are included.

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IGBT and MOSFET Drivers feature 32 V max supply voltage.

IGBT and MOSFET Drivers feature 32 V max supply voltage.

With output current up to 2.5 A and 0.5 A, respectively, Models VO3120 and VO3150A each consist of LED optically coupled to integrated circuit with power output stage operating from 15-32 V. Units are suited for directly driving IGBTs with ratings up to 800 V and 50 A for VO3120 and 20 A for VO3150A. Offered in lead-free and RoHS-compliant packages, drivers feature low power consumption of 2.5 mA...

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Toshiba Expands GaN HEMT Product Family with Power Amplifiers for C & Ku-Band SATCOM and X-Band Industrial Applications

High Power, High Gain Devices Include Toshiba's First Production C-Band GaN Amplifier for SATCOM, an Extended Ku-Band Amplifier and an X-Band Amplifier for Industrial Applications IRVINE, Calif., June 9 / / - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the addition of three new gallium nitride (GaN) semiconductor High Electron Mobility...

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GaAs FETs are optimized for power added efficiency.

Gallium arsenide field effect transistors (GaAs FETs) are targeted toward microwave radios and block up-converters. As X-Band GaAs FET for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, TIM1011-8ULA operates in 10.7-11.7 GHz range and has power added efficiency of 39%. For Ku-band, TIM1213-8ULA and TIM1213-8ULA, respectively, operate in...

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