Transistors

New Transistor Series with Fine Patterning Process Technology
Transistors

New Transistor Series with Fine Patterning Process Technology

50V/200mA General Transistor Series New transistor series with fine patterning process technology 50V/200mA General Transistor Series Overview This series is the Panasonic's new eco-friendly 50V/200mA transistors series for general use achieved with fine patterning process technology. Added ML3 to the package lineup, this series contribute to the miniaturization of customers products. Features o...

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TGF2021-08-SG - Greater Output Power Expands Appeal of New RF Transistors
Transistors

TGF2021-08-SG - Greater Output Power Expands Appeal of New RF Transistors

TriQuint has added a 7W device, the TGF2021-08-SG, to its 4 GHz GaAs pHEMT discrete transistor family, offering more output power across the same 20 MHz to 4 GHz range. Like its 4W cousin, the TGF2021-08-SG operates at 12V and is well suited for both wideband and narrowband operation. The 7W TGF2021-08-SG is ideal as a pre-driver and for use in handheld devices as well as base stations or other...

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TGF2021-04-SG - Versatility is Key for New 4W / 4 GHz GaAs RF Transistor
Transistors

TGF2021-04-SG - Versatility is Key for New 4W / 4 GHz GaAs RF Transistor

TriQuint's newest GaAs pHEMT discrete transistor, TGF2021-04-SG, is ideal for a variety of applications due to its versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. The TGF2021-04-SG operates at 12V and produces 4W (P1dB) with 12dB of gain at 4 GHz. It is well suited as a pre-driver in handheld wireless devices, base station systems or other applications up to 4...

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Automotive-Qualified IGBT features solderable front metal.
Transistors

Automotive-Qualified IGBT features solderable front metal.

Designed for high-current, high-voltage automotive inverter modules used in electric vehicles and hybrid electric vehicles as well as medium power drives, 1,200 V Model AUIRG7CH80K6B-M features Solderable Front Metal, which allows dual-sided cooling and enables wire bonds to be eliminated. Available in die form only, device includes square reverse bias safe operating area, up to 175°C max...

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Power MOSFET features low on-resistance ratings.
Transistors

Power MOSFET features low on-resistance ratings.

Model SiB455EDK 12 V, p-channel TrenchFET® Gen III power MOSFET offers on-resistance of 27 mW at 4.5 V, 39 mW at 2.5 V, 69 mW at 1.8 V, and 130 mW at 1.5 V. Measuring 1.6 x 1.6 mm in PowerPAK SC-75 package, unit provides gate-source voltage of 10 V and features typical ESD protection of 1,500 V. Halogen-free in accordance with IEC and RoHS, MOSFET is suited for use as load, PA, and battery...

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Power MOSFET offers on-resistance down to 18 mW.
Transistors

Power MOSFET offers on-resistance down to 18 mW.

Contained in 2 x 2 mm PowerPAK® SC-70 package, SiA433EDJ 20 V p-channel power MOSFET offers on-resistance of 18 mW at 4.5 V, 26 mW at 2.5 V, and 65 mW at 1.8 V. It also offers gate-source voltage of 12 V, suiting it for applications with gate-drive voltage variations due to surges, spikes, noise, or overvoltages. Zener diode provides ESD protection up to 1,800 V. Unit is...

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N-channel MOSFET Transistor operates in temperatures to 225°C.
Transistors

N-channel MOSFET Transistor operates in temperatures to 225°C.

Model CHT-SNMOS80 small-signal N-channel MOSFET transistor, operating in temperatures from -55 to +225°C, has input capacitance of 32 pF and gate leakage limited to 5.6 Â-µA at 225°C. It sinks up to 230 mA at 225°C and can convert 3.3/5 V logic signal to high-voltage open-drain output with turn on/off times lower than 5 nsec. With gate tied to source, unit can be used as 80...

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Transistors

RFMD® Receives First GaN Product Purchase Order from Tier-One Wireless Base Station Manufacturer

GREENSBORO, NORTH CAROLINA - November 12, 2009 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced RFMD® has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process...

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RFMD® Announces Major Gallium Nitride (GaN) Milestones
Transistors

RFMD® Announces Major Gallium Nitride (GaN) Milestones

RFMD Qualifies and Releases First GaN Device Shipments of RF3931 Unmatched Power Transistors Commence to Multiple High Power Amplifier (HPA) Manufacturers GREENSBORO, NORTH CAROLINA - November 11, 2009 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced that RFMD® has qualified and released the...

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Power MOSFET Transistors operate from -55 to +225°C.
Transistors

Power MOSFET Transistors operate from -55 to +225°C.

Available in TO-254 metal can package, 40 V N-channel power MOSFETs, CHT-NMOS4005, CHT-NMOS4010 and CHT-NMOS4020 have input capacitance from 460 pF to 1.4 nF and on-resistance from 0.15-0.40 W. Models CHT-NMOS4005, CHT-NMOS4010, and CHT-NMOS4020 are rated, respectively, for 5, 10, and 20 A maximum drain current. Operated at 225°C, CHT-NMOS4005's gate leakage current remains below 500 nA,...

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