Transistors

TGF2021-04-SG - Versatility is Key for New 4W / 4 GHz GaAs RF Transistor
Transistors

TGF2021-04-SG - Versatility is Key for New 4W / 4 GHz GaAs RF Transistor

TriQuint's newest GaAs pHEMT discrete transistor, TGF2021-04-SG, is ideal for a variety of applications due to its versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. The TGF2021-04-SG operates at 12V and produces 4W (P1dB) with 12dB of gain at 4 GHz. It is well suited as a pre-driver in handheld wireless devices, base station systems or other applications up to 4...

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Automotive-Qualified IGBT features solderable front metal.
Transistors

Automotive-Qualified IGBT features solderable front metal.

Designed for high-current, high-voltage automotive inverter modules used in electric vehicles and hybrid electric vehicles as well as medium power drives, 1,200 V Model AUIRG7CH80K6B-M features Solderable Front Metal, which allows dual-sided cooling and enables wire bonds to be eliminated. Available in die form only, device includes square reverse bias safe operating area, up to 175°C max...

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Power MOSFET features low on-resistance ratings.
Transistors

Power MOSFET features low on-resistance ratings.

Model SiB455EDK 12 V, p-channel TrenchFET® Gen III power MOSFET offers on-resistance of 27 mW at 4.5 V, 39 mW at 2.5 V, 69 mW at 1.8 V, and 130 mW at 1.5 V. Measuring 1.6 x 1.6 mm in PowerPAK SC-75 package, unit provides gate-source voltage of 10 V and features typical ESD protection of 1,500 V. Halogen-free in accordance with IEC and RoHS, MOSFET is suited for use as load, PA, and battery...

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Power MOSFET offers on-resistance down to 18 mW.
Transistors

Power MOSFET offers on-resistance down to 18 mW.

Contained in 2 x 2 mm PowerPAK® SC-70 package, SiA433EDJ 20 V p-channel power MOSFET offers on-resistance of 18 mW at 4.5 V, 26 mW at 2.5 V, and 65 mW at 1.8 V. It also offers gate-source voltage of 12 V, suiting it for applications with gate-drive voltage variations due to surges, spikes, noise, or overvoltages. Zener diode provides ESD protection up to 1,800 V. Unit is...

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N-channel MOSFET Transistor operates in temperatures to 225°C.
Transistors

N-channel MOSFET Transistor operates in temperatures to 225°C.

Model CHT-SNMOS80 small-signal N-channel MOSFET transistor, operating in temperatures from -55 to +225°C, has input capacitance of 32 pF and gate leakage limited to 5.6 Â-µA at 225°C. It sinks up to 230 mA at 225°C and can convert 3.3/5 V logic signal to high-voltage open-drain output with turn on/off times lower than 5 nsec. With gate tied to source, unit can be used as 80...

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Transistors

RFMD® Receives First GaN Product Purchase Order from Tier-One Wireless Base Station Manufacturer

GREENSBORO, NORTH CAROLINA - November 12, 2009 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced RFMD® has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process...

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RFMD® Announces Major Gallium Nitride (GaN) Milestones
Transistors

RFMD® Announces Major Gallium Nitride (GaN) Milestones

RFMD Qualifies and Releases First GaN Device Shipments of RF3931 Unmatched Power Transistors Commence to Multiple High Power Amplifier (HPA) Manufacturers GREENSBORO, NORTH CAROLINA - November 11, 2009 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced that RFMD® has qualified and released the...

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Power MOSFET Transistors operate from -55 to +225°C.
Transistors

Power MOSFET Transistors operate from -55 to +225°C.

Available in TO-254 metal can package, 40 V N-channel power MOSFETs, CHT-NMOS4005, CHT-NMOS4010 and CHT-NMOS4020 have input capacitance from 460 pF to 1.4 nF and on-resistance from 0.15-0.40 W. Models CHT-NMOS4005, CHT-NMOS4010, and CHT-NMOS4020 are rated, respectively, for 5, 10, and 20 A maximum drain current. Operated at 225°C, CHT-NMOS4005's gate leakage current remains below 500 nA,...

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Dual High-Voltage IGBT is rated at 4,500 V/150 A.
Transistors

Dual High-Voltage IGBT is rated at 4,500 V/150 A.

Developed for use on 4,160 Vac lines, QID4515001 is 4,500 V/150 A Dual High Voltage IGBT (HVIGBT) with isolation voltage of 10.2 kV rms. Integrated thermal management system incorporates AIN ceramic substrate and copper baseplate. In addition to use in utility power supplies, pulse power, and traction drives, applications for this product include medium voltage industrial drives, auxiliary power...

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Photodiodes

PIN Photodiodes/Phototransistors are automotive-qualified.

Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 Â-µA and...

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