Transistors

P-Channel Power MOSFET Transistors survive high temperatures.
Transistors

P-Channel Power MOSFET Transistors survive high temperatures.

Rated for -55 to +225°C operation, 30 V VENUS series includes CHT-PMOS3002/4/8 rated for 2, 4, and 8 A max drain current. Gate leakage current at 225°C for CHT-PMOS3002 is below 50 nA, while drain off current is as low as 10 Â-µA and turn-on delay time is 30 nsec. Respectively, on-resistance and input capacitance for all products range from 0.4-1.7 W and from 150-450 pF....

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Transistors

Megawatt IGBT is suited for green power applications.

Rated to 2.5 kV and 2,250 A, Part No. T2250AB25E is optimized for power density as well as reliability and efficiency. This press-pack IGBT comes in hermetic ceramic package with double side cooling that results in maximized thermal, power cycling, and power ratings. Mechanically compatible with cooling systems employed for 3,000/4,000 A GTO thyristors, product offers current rating that allows...

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Power MOSFET delivers space savings for small-signal applications.
Transistors

Power MOSFET delivers space savings for small-signal applications.

Housed in 1 x 0.6 x 0.43 mm SOT-923 package, SiM400 is 60 V N-channel power MOSFET that offers on-resistance of 3.9 W at VGS of 10 V, 4.8 W at 4.5 V, and 8 W at 3.5 V. Unit provides ESD protection up to 1,500 V and is lead-free, halogen-free, and RoHS-compliant. It is suited for range of small-signal switching applications including miniaturized motors in digital still/video cameras,...

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Inverter IC targets high efficiency motor drive applications.
Transistors

Inverter IC targets high efficiency motor drive applications.

Gallium Nitride (GaN) based, 106 KB monolithic inverter IC features 6 GaN-based transistors that can be independently driven, allowing high efficiency motor drive. Gate Injection Transistors (GITs) are integrated onto chip's lateral device configuration, independent operation of each is made possible by planar isolation using iron ion implantation that supports breakdown voltage of 900 V between...

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New Transistor Series with Fine Patterning Process Technology
Transistors

New Transistor Series with Fine Patterning Process Technology

50V/200mA General Transistor Series New transistor series with fine patterning process technology 50V/200mA General Transistor Series Overview This series is the Panasonic's new eco-friendly 50V/200mA transistors series for general use achieved with fine patterning process technology. Added ML3 to the package lineup, this series contribute to the miniaturization of customers products. Features o...

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TGF2021-08-SG - Greater Output Power Expands Appeal of New RF Transistors
Transistors

TGF2021-08-SG - Greater Output Power Expands Appeal of New RF Transistors

TriQuint has added a 7W device, the TGF2021-08-SG, to its 4 GHz GaAs pHEMT discrete transistor family, offering more output power across the same 20 MHz to 4 GHz range. Like its 4W cousin, the TGF2021-08-SG operates at 12V and is well suited for both wideband and narrowband operation. The 7W TGF2021-08-SG is ideal as a pre-driver and for use in handheld devices as well as base stations or other...

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TGF2021-04-SG - Versatility is Key for New 4W / 4 GHz GaAs RF Transistor
Transistors

TGF2021-04-SG - Versatility is Key for New 4W / 4 GHz GaAs RF Transistor

TriQuint's newest GaAs pHEMT discrete transistor, TGF2021-04-SG, is ideal for a variety of applications due to its versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. The TGF2021-04-SG operates at 12V and produces 4W (P1dB) with 12dB of gain at 4 GHz. It is well suited as a pre-driver in handheld wireless devices, base station systems or other applications up to 4...

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Automotive-Qualified IGBT features solderable front metal.
Transistors

Automotive-Qualified IGBT features solderable front metal.

Designed for high-current, high-voltage automotive inverter modules used in electric vehicles and hybrid electric vehicles as well as medium power drives, 1,200 V Model AUIRG7CH80K6B-M features Solderable Front Metal, which allows dual-sided cooling and enables wire bonds to be eliminated. Available in die form only, device includes square reverse bias safe operating area, up to 175°C max...

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Power MOSFET features low on-resistance ratings.
Transistors

Power MOSFET features low on-resistance ratings.

Model SiB455EDK 12 V, p-channel TrenchFET® Gen III power MOSFET offers on-resistance of 27 mW at 4.5 V, 39 mW at 2.5 V, 69 mW at 1.8 V, and 130 mW at 1.5 V. Measuring 1.6 x 1.6 mm in PowerPAK SC-75 package, unit provides gate-source voltage of 10 V and features typical ESD protection of 1,500 V. Halogen-free in accordance with IEC and RoHS, MOSFET is suited for use as load, PA, and battery...

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Power MOSFET offers on-resistance down to 18 mW.
Transistors

Power MOSFET offers on-resistance down to 18 mW.

Contained in 2 x 2 mm PowerPAK® SC-70 package, SiA433EDJ 20 V p-channel power MOSFET offers on-resistance of 18 mW at 4.5 V, 26 mW at 2.5 V, and 65 mW at 1.8 V. It also offers gate-source voltage of 12 V, suiting it for applications with gate-drive voltage variations due to surges, spikes, noise, or overvoltages. Zener diode provides ESD protection up to 1,800 V. Unit is...

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Gorbel Introduces New Mobile Fall Protection Unit
Sponsored

Gorbel Introduces New Mobile Fall Protection Unit

Providing adequate fall protection is always a critical consideration and one that in many cases can be difficult to ensure. The new Mobile Fall Protection Unit is designed to facilitate positive fall protection in applications that would typically be difficult or impossible to provide with standard methods. To learn all about the advantages and convenience, see our video.

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