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Transistors

C-Band GaAs FETs suit microwave radios/power amplifiers.

C-Band GaAs FETs suit microwave radios/power amplifiers.

High-performance EL series products include TIM6472-16EL that operates in 6.4-7.2 GHz range with power gain at 1 dB gain compression point (G1dB) of 11.0 dB typical. Model TIM7179-16EL operates from 7.1-7.9 GHz with G1dB of 10.5 dB, while TIM7785-16EL, operating in 7.7-8.5 GHz range, has G1dB of 10.0 dB. All 3 units feature output power of 1 dB gain compression point (P1dB) of 42.5 dBm. When...

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Power MOSFETs are rated for -55 to +225

Power MOSFETs are rated for -55 to +225

Supplied in TO-254 metal can packaging, Earth high-temperature, 80 V, N-channel power MOSFETs include 2 versions - CHT-NMOS8005 and CHT-NMOS8010 - respectively rated for 5 and 10 A max drain current. On-resistance and input capacitance of family respectively range from 0.25-0.5 W and 410-850 pF. At 225-

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Miniature Bipolar Transistors feature PowerDI®5 SMT package.

Miniature bipolar transistors feature 26 mm-² PowerDI-®5 SMT package with board height of 1.1 mm and minimum copper power rating of 0.74 W. Thermal resistance rating is 75-ºC/W on 25 mm-² copper. Models DXT2013P5, DXT2014P5, and DXTP03200BP5 improve efficiency of SLIC DC-DC converters, while DXTP19020DP5 ensures full-capacity battery charging at low charger input voltage. Models also include...

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GaAs FETs deliver output power of 18 and 30 W.

GaAs FETs deliver output power of 18 and 30 W.

Operating in 12.7-13.2 GHz range, Ku-Band Models TIM1213-18L and TIM1213-30L are targeted for use in microwave radios for microwave links and satellite communications. Model TIM1213-18L has output power at 1 dB gain compression point (P1dB) of 42.5 dBm, power gain at 1 dB gain compression point (G1dB) of 6.0 dB, and power efficiency of 28%, while Model TIM1213-30L features P1dB of 45.0 dBm, G1dB...

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CMAA Crane Buyer's Guide
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CMAA Crane Buyer's Guide

CMAA has organized this Buyer's Guide to promote standardization and to assist prospective buyer's of electric overhead traveling cranes in selection of equipment most suitable for their applications.

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Power MOSFETs feature high-efficiency design.

Power MOSFETs feature high-efficiency design.

Model STL21N65M5 includes MDmesh(TM) V power MOSFET technology, which incorporates exposed metal drain pad for efficient removal of internally generated heat in 1 mm high, 8 x 8 mm SMT PowerFLAT(TM) 8x8 HV package. Offering breakdown voltage of 650 V, unit also has low gate charge, which enables energy-efficient switching at high speeds. It has RDS(ON) of 0.190 W and maximum rated current of 17...

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P-Channel Power MOSFET offers RDS(on) of 41 mW at 4.5 V.

P-Channel Power MOSFET offers RDS(on) of 41 mW at 4.5 V.

Model SiA975DJ dual 12-V p-channel TrenchFET-® Gen III power MOSFET features RDS(on) of 41 mW at 4.5 V, 60 mW at 2.5 V, and 110 mW at 1.8 V. This lowers conduction losses and voltage drop at peak currents, preventing undervoltage lockout conditions with IC/load. Measuring 2 x 2 mm, package is suited for use in handheld electronics. Halogen free unit is compliant to RoHS directive 2002/95/EC.

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N-Channel Power MOSFET has 500 V rating.

N-Channel Power MOSFET has 500 V rating.

Suitable for ZVS topologies, model SiHF8N50L-E3 features low trr of 63 nsec, Qrr of 114 nC, and gate charge of 34 nC. Unit also offers 1.0 W maximum RDS(on) at 10 V gate drive that lowers conduction losses and saves energy. Peak current handling is 22 A pulsed and 8 A continuous, and reverse recovery characteristics provide EMI immunity. Offered in TO-220 FULLPAK package, product is also...

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Transistors offer minimal on-state-resistance, switching times.

Offered in ultra-low VCEsat and high-speed switching versions, BISS-4 (Breakthrough In Small-Signal) transistors are available in 20-60 V range and come in 2.9 x 1.3 x 1 mm SMD SOT23 and 2.9 x 1.5 x 1 mm SOT457 packages. Ultra-low VCEsat versions enable saturation voltage below 50 mV at 1 A, while high-speed switching versions come with reduced switching and storage times down to 125 ns. DC...

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FREDFET boosts energy efficiency of large-screen LCD TVs.

Based on Power MOS8(TM) technology, APT15F50KF FREDFET integrates power transistor tailored for large-screen LCD TV designs with high-voltage backlight inverters and CCFL controllers that provide PureBLACK(TM) CCFL image quality. With external circuitry, controllers can drive FREDFET in push-pull, half-bridge, or full-bridge CCFL inverter configurations. Available in TO-220 and TO220 Full-Pack...

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