Transistors

Photodiodes

PIN Photodiodes/Phototransistors are automotive-qualified.

Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 Â-µA and...

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IGBTs minimize energy loss in motor control circuits.
Transistors

IGBTs minimize energy loss in motor control circuits.

Rated for 1,200 V operation, Models STGW30N120KD and STGW40N120KD are suited for applications up to 30 and 40 A, respectively. Units can survive short circuits lasting up to 10 Â-µs, making them resistant to common causes of motor-controller failures, such as error in gate drive signal, shorting at grounding, and breakdown of motor phase-to-phase insulation. Housed in TO-247 package,...

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Applied Power the Driving Force in Power Electronics
Miscellaneous Controls

Applied Power the Driving Force in Power Electronics

APS is a high-tech company concentrated exclusively on power electronics, providing innovative, leading-edge, quality-engineered products. Our technical expertise and practical experience allows us to develop and produce power electronic products that satisfy the toughest requirements and withstand the harshest environments. APS featuring a complete converter & controllers solution with our...

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Intelligent Power Modules suit 3-phase inverter applications.
Transistors

Intelligent Power Modules suit 3-phase inverter applications.

Suited for applications in medium power range up to 20 hp for both 230-480 Vac lines, DIPIPM(TM) Series incorporates CSTBT(TM) Carrier Stored Trench Gate Bipolar Transistor IGBT technology with on-chip current sense for short circuit protection. Models PS21A79 and PS21A7A are rated at 50 and 75 A, 600 V while PS22A72-PS22A78-E range from 5-35 A at 1,200 V. Operating from single 15 Vdc supply,...

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Transistors

LDMOS RF Transistor targets TV broadcast applications.

Used in single-ended or push-pull configuration, 50 V Model MRF6V3090N is designed for TV transmitters employing analog and digital modulation formats. Unit delivers 90 W peak power at P1dB with greater than 40% efficiency through UHF broadcast frequency band. As linear driver, device achieves 21 dB power gain and drain efficiency of 12% with average output power of 4.5 W, based on DVB-T OFDM...

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Semiconductor Assemblies offer range of electronic options.
DC to AC Power Supplies (Inverters)

Semiconductor Assemblies offer range of electronic options.

Featuring voltages from 100-20,000 V and currents ranging from 30-3,000 A, Semiconductor Assemblies come in single, double, or 3-phase circuit configurations. Units are also available as full bridge or as series stacks and AC or static switches. Bus bars, gate firing circuits, fuses, snubbers, blowers, and fans are optional. Typical applications include power supplies, AC/DC and static...

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Power MOSFETs offer VDS range from 8-30 V.
Transistors

Power MOSFETs offer VDS range from 8-30 V.

Housed in thermally enhanced PowerPAK® SC-75 package measuring 1.6 x 1.6 x 0.8 mm, 30 V Model SiB408DK and 20 V Model SiB412DK feature on-resistance as low as 40 mW at 10 V and 34 mW at 4.5 V, respectively. RoHS-compliant n-channel TrenchFET® power MOSFETs are suitable for load, PA, and battery switches in portable electronics. Model SiB408DK can also be used for load switching in...

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Electronic Amplifiers

RF Power Transistors target TD-SCDMA wireless networks.

Providing 50 W peak RF output power, MRF7P20040H LDMOS FET features drain efficiency of 43% and 18 dB gain at 10 W average output. Multi-stage power amplifier IC, Model MD7IC2050N, provides 70 W peak RF output power, drain efficiency of 35%, and 29 dB gain at 10 W output. Designer can select discrete, 3-stage PA configuration with MRF7P20040H as final amplifier, or MD7IC2050N IC in 2-stage PA...

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Power MOSFET features 6.1 mW RDS(on) in SO-8 package.
Transistors

Power MOSFET features 6.1 mW RDS(on) in SO-8 package.

Model SiE876DF is 60 V device available in SO-8 PolarPAK® package that features lead-frame, encapsulated design. Maximum RDS(on) is 6.1 mW at 10 V gate drive while drain-source voltage rating is under 150 V. Incorporating TrenchFET® silicon which provides low conduction losses, n-channel device includes double-sided cooling for optimal thermal performance in high-current applications....

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Power MOSFET optimizes on-resistance in SO-8 footprint.
Transistors

Power MOSFET optimizes on-resistance in SO-8 footprint.

Supplied in PowerPAK® SO-8 package, Siliconix Si7145DP may be used as adaptor switch and for load switching applications in notebook computers and industrial/general systems. This 30 V p-channel power MOSFET offers max on-resistance down to 2.6 mW at 10 V gate drive and 3.75 mW at 4.5 V. On-resistance values help lower conduction losses, promoting power conservation and prolonging battery...

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