Transistors

Tri-Level IGBT Module is designed for NPC circuits.

Designed for Neutral Point Clamped (NPC) circuits, IGBT module reduces switching loss by producing waveform closer to sine wave. This is realized by integrating 3 levels of output voltage steps - IGBT, FWD, and RB-IGBT (reverse blocking IGBT) - in one 110 x 80 x 30 mm package. While model 4MBI300VG-120R-50 carries IGBT ratings of 1,200 V and 600 V and RB-IGBT rating of 300 A, respective ratings...

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RoHS-Compliant IGBT serves high-power semiconductor industry.

RoHS-Compliant IGBT serves high-power semiconductor industry.

Suited for all types of power inverter applications, Powerex 6th Generation NX-S Series is optimized for high current density and wide RBSOA (Reverse Biased Safe Operating Area). Aluminum Nitride ceramic substrate, with optimal coefficient of thermal expansion, reduces thermal stress and promotes reliability as well as module life. Along with more than 10 -µsec short circuit capability, 1,200 V...

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Two-in-One IGBT Module optimizes parallel connections.

Supplied in 172 x 89 x 38 mm or 250 x 89 x 38 mm package, High-Power 2-in-1 IGBT Module series feature V-IGBT chip that minimizes power loss and are manufactured with ultrasonic bonding technology that promotes reliability in heat cycle. Each RoHS-compatible model is designed to realize low inductance and current balance of parallel-connected semiconductors. Models with 1,200 V rating offer...

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Breakthrough LDMOS Power from Richardson Electronics

Freescale's MRFE6VP61K25 Sets Ruggedness Standard at 1.25kW Freescale Semiconductor has introduced the first 50V LDMOS power transistor that can deliver its full rated output power of 1.25kW after withstanding a load mismatch VSWR of 65:1 - across ALL phase angles. This extreme ruggedness capability represents a major advancement over the current RF power transistor choices for designers of...

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Panasonic Develops a Gallium Nitride (GaN) Power Transistor on Silicon with Blocking-Voltage-Boosting Structure

Osaka, - Panasonic today announced the development of a new technique to drastically increase the blocking voltage of Gallium Nitride (GaN) -based power switching transistor on silicon (Si) substrates. The blocking voltage of the Si substrate can be added to that of the GaN transistor by the new structure which will enable the blocking voltage over 3000V. The new GaN transistor extends the...

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P-Channel 30 V MOSFET operates over -55 to +225°C range.

P-Channel 30 V MOSFET operates over -55 to +225°C range.

Supplied in TO-39 Metal Can package, MARS 30 V logic-level P-MOSFET transistor (CHT-SPMOS30) offers input capacitance of 14 pF and gate leakage limited to 400 nA at 225°. It can source up to 310 mA at 225°C and may also be used to convert 3.3/5 V logic signal to high voltage open-source output with turn on/off times lower than 10 ns. With gate tied to source, MARS can also perform as 30 V small...

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RF Power Transistor supports Green architecture.

RF Power Transistor supports Green architecture.

Operating over frequency range of DC to 3 GHz, 75 Watt Model RF3932 delivers peak efficiency of greater than 65%. Gallium nitride Unmatched Power Transistor is housed in hermetic, flanged, ceramic 2-leaded package that leverages heat sink and power dissipation technologies for thermal stability and conductivity. Unit is optimized for both driver and/or output stages, depending on overall power...

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GaN 140 W Transistor supports green architectures.

Designed in 48 V GaN semiconductor process and supplied in hermetic flanged ceramic 2-leaded package, RF3934 gallium nitride (GaN) RF unmatched power transistor (UPT) reduces energy consumption as well as improves thermal management and network efficiency for network operators. It operates over DC to 3 GHz range in single amplifier design and delivers peak efficiency of greater than 65%....

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Gallium Nitride HEMTs serve L-C band (0.5-6 GHz) amplifiers.

Gallium Nitride HEMTs serve L-C band (0.5-6 GHz) amplifiers.

Supplied in 4.4 x 14.0 mm package, MGF084xG series includes 3 models of gallium nitride (GaN) high electron mobility transistors (HEMTs) with 10, 20, and 40 W outputs. In addition to power efficiencies from 46%-50% at P3dB and 2.6 GHz, characteristics include 47 V operating voltage, 12-14 dB gain, and quiescent drain current from 90-340 mA. Uses include base stations for mobile phones, very small...

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Diodes Incorporated Launches Miniature SOT963 Packaged Devices for Ultra Portable Electronics

Dallas, Texas -Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today has introduced bipolar transistor, MOSFET, and TVS devices in the ultra small SOT963 package, achieving the same or better performance of much larger packaged parts. Suiting low...

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