New Transistors Products

IGBTs suit high power switching systems.

Utilizing proprietary Ultra Field Stop trench technology, Model NGTB40N120FL3WG has Ets of 2.7 mJ, while Model NGTB25N120FL3WG has Ets of 1.7 mJ. Both devices feature VCEsat of 1.7 V at their respective rated currents. Model NGTB40N120L3WG, optimized for low conduction losses, has VCEsat of 1.55 V, at rated current, with Ets of 3 mJ. All RoHS-compliant 1,200 V products are co-packaged with fast...

GaN HEMT Die (28 V, 30 W) supports up to 8 GHz operation.

As 28 V, 30 W GaN HEMT (high electron mobility transistor) bare die, CGH80030DÃ- exhibits 12 dB typ small signal gain at 8 GHz, 17 dB typ small signal gain at 4 GHz, and 30 W typ PSAT. Suitable applications include UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure;...

Transphorm's 600V GaN HEMT Named Product of the Year by Electronics Products Magazine

TPH3006PS Device Garners Award for Innovative Advancement in Discrete Semiconductors Goleta, CA – Transphorm Inc. is pleased to announce that it has been honored with Electronic Products' Product of the Year Award for its TPH3006PS GaN (Gallium Nitride) device, the first 600V HEMT (High Electron Mobility Transistor) in the industry to be JEDEC qualified. The editors of Electronic Products—a...

Asymmetric Dual N-Channel MOSFET features low on-resistance.

Housed in 3 x 3 mm PowerPAIRÃ-® package utilizing TrenchFET Gen IV technology, 30 V Siliconix SiZ340DT is optimized for synchronous buck designs in cloud computing infrastructures, servers, telecommunication equipment, and client-side electronic devices. Low-side Channel 2 MOSFET of SiZ340DT offers low on-resistance of 5.1 mΩ at 10 V gate drive and 7.0 mΩ at 4.5 V, while high-side Channel 1...

MAXPRO® High-Pressure Custom and Standard Systems

At MAXPRO® Technologies, we welcome the opportunity to design a system to meet your specific system requirements. From boosting gas pressure for molding baby bottles to scavenging helium gas from decommissioned missile tubes to research laboratories, our team of high-pressure engineers and technicians bring a wide range of experience to the table when developing solutions for your high-pressure challenges.

TI Introduces Wide-Input Power Solutions with High-Voltage Protection

50-mA, 100-V LDO and 12-A, 60-V step-down controller provide fastest transient response, high efficiency to industrial systems DALLAS - Texas Instruments Incorporated (TI) (NYSE: TXN) expanded its industry-leading power management portfolio with two new step-down regulators with wide input voltages and high-voltage protection. The new 100-V LDO and 60-V DC/DC controller can withstand high-voltage...

N-Channel MOSFET operates in temperatures up to 225-

Operating over temperature range of -55 to +225Ã-

Richardson Electronics and Powerex Offer IGBT Breakthrough...

Ultra-Low Loss NX-S Series IGBT Improves Inverter Performance LaFox, Illinois: Richardson Electronics, Ltd. (NASDAQ: RELL) and Powerex, Inc., announce off-the-shelf availability of Powerex's breakthrough 6th generation IGBT family. Richardson Electronics carries a substantial inventory of Powerex IGBT devices to support its customers in the Americas. The 6th generation technology includes...

N-Channel Power MOSFET has 500 V rating.

Suitable for ZVS topologies, model SiHF8N50L-E3 features low trr of 63 nsec, Qrr of 114 nC, and gate charge of 34 nC. Unit also offers 1.0 W maximum RDS(on) at 10 V gate drive that lowers conduction losses and saves energy. Peak current handling is 22 A pulsed and 8 A continuous, and reverse recovery characteristics provide EMI immunity. Offered in TO-220 FULLPAK package, product is also...

Transistors offer minimal on-state-resistance, switching times.

Offered in ultra-low VCEsat and high-speed switching versions, BISS-4 (Breakthrough In Small-Signal) transistors are available in 20-60 V range and come in 2.9 x 1.3 x 1 mm SMD SOT23 and 2.9 x 1.5 x 1 mm SOT457 packages. Ultra-low VCEsat versions enable saturation voltage below 50 mV at 1 A, while high-speed switching versions come with reduced switching and storage times down to 125 ns. DC...

FREDFET boosts energy efficiency of large-screen LCD TVs.

Based on Power MOS8(TM) technology, APT15F50KF FREDFET integrates power transistor tailored for large-screen LCD TV designs with high-voltage backlight inverters and CCFL controllers that provide PureBLACK(TM) CCFL image quality. With external circuitry, controllers can drive FREDFET in push-pull, half-bridge, or full-bridge CCFL inverter configurations. Available in TO-220 and TO220 Full-Pack...

Solder Redefined

Indium Corporation has developed a new twist on traditional solder by developing a composite with a reinforced matrix internal structure. The result is a solder with increased strength and reliability. Check out this video to learn more about the mechanics behind the groundbreaking technology.