Transistors

High Voltage MOSFETs target LCD TVs and monitors.

Used as power conversion part for Switched-Mode Power Supplies where flyback topology is adopted, MDx Series 650 V MOSFETS are typically used for LCD-TVs and LCD monitors which require high-speed switching. In mission critical situations, use of power supplies which incorporate 650V HV MOSFET is essential to securing stable and regulated supply of power, particularly in countries that experience...

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Hybrid IGBT Modules feature multiple circuit topologies.

Hybrid IGBT Modules feature multiple circuit topologies.

Combining NFH-Series Powerex IGBT with Zero Recovery-® Schottky diode, split dual Si/SiC hybrid IGBT modules QID1210005 and QID1210006 are designed for hard switching applications upwards of 30 kHz and soft switching applications from 60-80 kHz. Individual modules feature 2 IGBT transistors, each having reverse-connected Zero Recovery free-wheel silicon carbide Schottky diode. All components and...

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Richardson RFPD Announces Design-In Support and Immediate Availability of Breakthrough LDMOS RF Power Transistors for UHF Broadcast

Richardson RFPD Announces Design-In Support and Immediate Availability of Breakthrough LDMOS RF Power Transistors for UHF Broadcast

Freescale(TM) Semiconductor's New MRFE6VP8600H and MRFE6VP8600HS LaFox, Illinois: Richardson RFPD, Inc. today announces the availability of two breakthrough 50V LDMOS RF power transistors which set new standards for ruggedness in the UHF broadcast industry. The MRFE6VP8600H and MRFE6VP8600HS are push-pull power transistors that provide enhanced efficiency and operate over the 470 - 860 MHz...

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Triple Voltage CMOS Process suits mixed signal applications.

Triple voltage CMOS process consists of zero layer CMOS transistor design embeddable in standard 1.8/5 V and 1.8/3.3 V CMOS processes. CMOS transistors have max gate voltage of 7 V and max drain voltage of 10 V in operation with breakdown voltage of over 17 V. Fully compatible with standard CMOS process, solution is intended to support integration of off-chip, high-voltage circuits into standard...

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SiC JFETs target high-end audio applications.

SiC JFETs target high-end audio applications.

Compatible with standard gate driver ICs, SJEP120R100A and SJEP120R063A are silicon carbide (SiC) JFETS feature respective RDS(on) max of 0.100 ohm and 0.063 ohm. Both products offer positive temperature coefficient that facilitates paralleling as well as fast switching with no tail current at up to 150-

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N Channel MOSFETs meet needs of mobile devices.

Models SSM3K37MFV, SSM3K37FS, SSM3K37CT, SSM6N37FU, SSM6N37FE, and SSM6N37CTD address power consumption issues and physical size restrictions of mobile devices. Able to be driven at voltages as low as 1.5 V, these transistors can act as switch to control which loads are connected or disconnected from circuit. Products have 250 mA drain current and are suitable for high-speed switching...

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Dual Pch MOSFETs combine 2 transistors in one package.

Combining 1.8 V drive with 4 A drain current, Models SSM6P47NU and SSM6P49NU run at optimal efficiency, minimizing time needed for batteries to be fully charged. Available in 2.0 x 2.0 mm UDFN6 package, dual MOSFETs are suitable for charging circuits in mobile devices and are capable of acting as switch to control which loads are connected or disconnected from circuit. Applications include...

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STMicroelectronics Extends Sixth-Generation Power MOSFET Family, Bringing Energy-Saving Advantages to Solar, Telecom and Consumer Applications

Latest STripFET(TM) VI DeepGATE power MOSFETs offer increased voltage ratings, delivering enhanced on-state and switching performance for DC-DC applications GENEVA - STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications and a leading supplier of power chips, has extended its family of high-efficiency power transistors...

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RF Power Transistors target L- and S-Band radar applications.

RF Power Transistors target L- and S-Band radar applications.

Gallium Nitride RF Power transistors offer optimal RF performance with respect to power, gain, gain flatness, efficiency, and ruggedness over wide-operating bandwidths. They also feature high breakdown voltage and power density. Twelve models are offered, with operating frequencies of either 960-1,215; 1,200-1,400; 1-3,500; 2,700-3,100; or 3,100-3,500 MHz; with peak wattage of 30, 100, 125, 180,...

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