Transistors

Vishay to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC® 2012

Vishay Intertechnology to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC® 2012 MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC®) 2012, taking place Feb. 5-9 at the Disney Coronado Springs Resort in Orlando, Fla. In booth 911, the...

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Vishay Siliconix TrenchFET® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine

MALVERN, Pa. - Dec. 19, 2011 - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge...

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Vishay Siliconix TrenchFET® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine

MALVERN, Pa. - Vishay Intertechnology, Inc. (VSH: NYSE) today announced that its Vishay Siliconix SiR662DP TrenchFET® power MOSFET has received a China Leading Electronic Product Award from the trade publication Application of Electronic Technique (AET). The SiR662DP 60 V n-channel power MOSFET features the industry's lowest on-resistance and on-resistance times gate charge figure of merit (FOM)...

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Fujitsu Semiconductor and SuVolta Demonstrate Ultra-Low-Voltage Operation of SRAM Down to ~0.4V

Tokyo - Fujitsu Semiconductor Limited and SuVolta Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating SuVolta's PowerShrink low-power CMOS platform into Fujitsu Semiconductor's low-power process technology. By reducing power consumption, these technologies will make possible the...

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Nitronex Partnership with GCS Leads to a Capacity Advantage in Rapidly Growing GaN RF Market

Nitronex Partnership with GCS Leads to a Capacity Advantage in Rapidly Growing GaN RF Market

Nitronex qualifies NRF1 GaN process at GCS... DURHAM, NC - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has successfully completed qualification of its NRF1 discrete process for volume production at Global Communication Semiconductors...

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Microsemi Strengthens Radiation-Hardened Aerospace Products Portfolio

Delivers Industry's First 120V Input, 50W High-reliability DC-DC Converter Modules ALISO VIEJO, Calif., Nov. 1, 2011 - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced that it strengthened its portfolio of radiation-hardened products with the industry's first family of 120 volt, 50...

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Military and Aerospace Leader SEMICOA Strengthens Presence in Florida and Southeast: Partners with Florida's Alliance Group One

OLDSMAR, Fla. - SEMICOA Corporation, a leading provider of high reliability, discrete semiconductors to the military and aerospace industries today strengthened its presence in Florida and the Southeast by announcing a partnership with Florida's Alliance Group One, a top manufacturers representative to Florida's large military, aerospace and electronic industries. Alliance Group One will...

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Powerex 6th Generation IGBT with CSTBT(TM) Technology and Tj(max) 175

Powerex 6th Generation IGBT with CSTBT(TM) Technology and Tj(max) 175

Powerex (www.pwrx.com) plans to offer IGBTs from 300A/1200V ̴ 800A/1200V in conventional packages, allowing customers an easy upgrade path for increased system ratings and/or improved reliability due to the increased allowable operating junction temperature. Featuring 6th Generation Carrier Stored Trench-Gate Bipolar Transistor (CSTBT(TM)) silicon for significant performance improvement, these...

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Richardson RFPD Introduces Highly Efficient, 55W GaN RF Power Transistor from TriQuint Semiconductor

Richardson RFPD Introduces Highly Efficient, 55W GaN RF Power Transistor from TriQuint Semiconductor

T1G4005528-FS Operates from DC-3.5 GHz and Offers Greater than 50% Efficiency at 3.5 GHz LaFox, Illinois: Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for a new 28-volt, 55 Watt, GaN on SiC HEMT, RF power transistor from TriQuint Semiconductor. The T1G4005528-FS provides 55W RF output power (P3dB), with greater than 15 dB of linear gain, and...

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Vishay Siliconix SiR662DP 60 V N-Channel TrenchFET® Power MOSFET

Vishay Siliconix SiR662DP 60 V N-Channel TrenchFET® Power MOSFET

MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its SiR662DP 60 V n-channel TrenchFET® power MOSFET was chosen as a winner in Electronic Products China magazine's ninth annual Top-10 DC/DC Power Product Awards. The editors of Electronic Products China evaluated hundreds of products launched in the previous year on the basis of innovative design, significant...

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