Transistors

Insulated Gate Bipolar Transistors feature 1,200 V rating.

Models APT40GR120B, APT40GR120S, and APT40GR120B2D30 minimize switching and conduction losses. Discrete non-punch through IGBTs are offered on standalone basis or can be packaged in combination with Microsemi's FRED or silicon carbide Schottky diodes. Short Circuit Withstand Time Rated for reliable operation, transistors provide hard switching operation greater than 80 kHz, optimizing power...

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SemiSouth Announces New 1700V/1400mOhm SiC JFETs Which Simplify Fast Start-up of 3-Phase Power Supplies

SemiSouth Announces New 1700V/1400mOhm SiC JFETs Which Simplify Fast Start-up of 3-Phase Power Supplies

Fast start-up, reduced component count, simplified design SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has announced a new 1700V/1400mOhm silicon carbide JFET which simplifies start up circuit design in 3-phase auxiliary power supplies....

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Field Stop IGBTs suit inductive heating applications.

Field Stop IGBTs suit inductive heating applications.

Offering 15, 20, and 25 A current ratings, respectively, Models NGTB15N120, NGTB20N120, and NGTB25N120 utilize deep trench technology and wafer thinning techniques to enable low turn-off losses while maintaining low ON state voltage during turn-on. Housed in TO-247 package with 1,200 V rating, devices enable power conversion for wide range of demanding applications, including induction cook tops,...

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Soitec Outlines Fully Depleted Product Roadmap for Advanced Planar and Three-Dimensional Transistors

Product offer designed to enable continued advances in performance and efficiency of mainstream mobile consumer devices BERNIN, France and PEABODY, Massachusetts - Soitec, a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, announced today its fully depleted (FD) product roadmap comprising two products designed for both...

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Vishay Intertechnology's SiZ710DT 20 V N-Channel PowerPAIR® Power MOSFET Honored With 2012 China ACE Award

Vishay Intertechnology's SiZ710DT 20 V N-Channel PowerPAIR® Power MOSFET Honored With 2012 China ACE Award

MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE:VSH) today announced that the company's SiZ710DT 20 V n-channel PowerPAIR® power MOSFET has received a 2012 China Annual Creativity in Electronics (ACE) Award in the category of Power Devices/Voltage Converter. The China ACE Power Devices/Voltage Converter Product of the Year Award recognizes solutions that offer significant design and technical...

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Richardson RFPD Introduces New GaN on SiC Power Transistor Devices from M/A-COM Tech

Richardson RFPD Introduces New GaN on SiC Power Transistor Devices from M/A-COM Tech

Eight Devices Represent Decades of Leadership in Power Hybrid Technology La Fox, Illinois: Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for eight devices representing the new gallium nitride (GaN) on Silicon Carbide (SiC) family of power transistors from M/A-COM Technology Solutions, Inc. This product family targets L- and S-Band applications...

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SEMICOA Announces First QPL Power MOSFETs: Target Demanding Military and Space Applications

High Reliability Leader Receives QPL Certification in Accordance with DLA's Qualified Parts List (QPL) COSTA MESA, Calif. - SEMICOA, a leading provider of high reliability discrete semiconductors for military, aerospace and commercial applications today achieved a key strategic milestone, announcing it has received QPL certification for its first power MOSFET products in accordance with MIL-PRF...

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SiC Trench JFET offers minimal switching losses.

SiC Trench JFET offers minimal switching losses.

Normally on (NO) silicon carbide (SiC) trench JFET, SJDP120R340, provides high-speed switching in micro inverters. Rated at 1,200 V with max on-state resistance of 340 mohm (typical RDS on of 270 mohm), device features positive temperature coefficient to facilitate paralleling as well as accelerated switching with no tail current at 150-

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Vishay Intertechnology to Showcase Industry-Leading Solutions in Six Product Categories at EFY Expo 2012 in India

Devices Optimized for Energy Meter, Alternate Energy Supply, and Automotive Applications MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced that it will be showcasing the company's latest industry-leading capacitors, inductors, resistors, diodes/rectifiers, power MOSFETs, and optoelectronics at Electronics For You (EFY) Expo 2012, taking place Feb. 16-18 at Pragati Maidan in...

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