Transistors

Pulsed Power Transistor features broadband operation at +50 V.
Transistors

Pulsed Power Transistor features broadband operation at +50 V.

Intended for civilian and military pulsed radar applications, Model MAGX-002735-040L00 delivers 40 W peak power at 55% drain efficiency with minimum gain of 10.5 dB across full 2.7-3.5 GHz frequency band. Gold metalized, internally matched, GaN on SiC, RF power transistor exhibits optimal performance when operated at +50 V, using 300 Â-µs pulse and 10% duty cycle pulsed signal. Manufactured...

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Transistors

N-Channel Power MOSFET features on-resistance down to 9.4 mW.

Model SiA436DJ, 8 V n-channel TrenchFET® power MOSFET offers on-resistance of 9.4 mW at 4.5 V, 10.5 mW at 2.5 V, 12.5 mW at 1.8 V, 18 mW at 1.5 V, and 36 mW at 1.2 V. Featuring PowerPAK® SC-70 2 x 2 mm package, it is suitable for load switching in portable electronics such as smartphones and tablet PCs. It is also compatible with low-voltage power rails in handheld devices. Product is...

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Electronic Amplifiers

C-Band GaAs FETs target microwave radios and BUCs.

Respectively operating in 5.3-5.9 GHz and 5.9-6.4 GHz range, TIM5359-16EL and TIM5964-16EL C-Band gallium arsenide field effect transistors (GaAs FETs) offer output power, at 1 dB gain compression point, of 16 W or 42.5 dBm typ; linear gain of 11.5 dB typ; and power added efficiency of 38%. Products targeting microwave radios support point-to-point and point-to-multipoint terrestrial...

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DC to AC Power Supplies (Inverters)

Vishay to Showcase Power Electronics for Solar Energy at Intersolar Europe 2012

Vishay Intertechnology to Showcase Broad Range of Standard and Special Power Electronics for Solar Energy at Intersolar Europe 2012 MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company will be presenting powerful and energy-efficient power electronics products such as rectifiers, resistors, aluminum and film capacitors, diodes, MOSFETs, and optocouplers at...

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SiC JFET accelerates start-up of 3-phase power supplies.
Transistors

SiC JFET accelerates start-up of 3-phase power supplies.

Using depletion mode JFET SJDT170R1400, designers can achieve simplified and accelerated start-up without using any extra components, including heat sink. This 1,700 V/1,400 mohm silicon carbide (SiC) JFET, targeting 3-phase auxiliary power supplies, comes in 16 x 10 x 4.4 mm, SMD D2PAK-7L package with creepage distance of 6.85 mm that supports 1,700 V applications, simplifies PCB layout, and...

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Toshiba Announces Next-Generation Superjunction Technology for Power MOSFETs
Transistors

Toshiba Announces Next-Generation Superjunction Technology for Power MOSFETs

New Process in Latest 600V MOSFETs Delivers Ultra-Low RDS((ON)), Reduced Switching Losses and Fewer Incidents of 'Ringing' IRVINE, Calif. - Toshiba America Electronic Components, Inc., (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced its DTMOS-IV process, a new-generation of superjunction (SJ) technology for power MOSFETs....

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Transistors

Next-Generation TrenchFET® Gen IV 30 V N-Channel Power MOSFETs Feature On Resistance Down to 1.0 mW at 10 V and 1.35 mW at 4.5 V

New Family of Devices Offers Industry's Lowest On-Resistance at 4.5 V MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the first devices in its next-generation TrenchFET® Gen IV family of 30 V n-channel power MOSFETs. Utilizing a new high-density design, the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35 mW at 4.5 V and low...

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Field Stop IGBTs enable high-efficiency power conversion.
Transistors

Field Stop IGBTs enable high-efficiency power conversion.

Intended for high-power inductive heating and inverter applications, 1,200 V-rated NGTB15N120, NGTB20N120, and NGTB25N120 are targeted for industrial motor control and consumer products. Deep trench technology as well as wafer thinning and processing techniques enable minimal turn-off losses while maintaining low ON state voltage during turn-on. Supplied in TO-247 package with low forward drop...

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Transistors

Insulated Gate Bipolar Transistors feature 1,200 V rating.

Models APT40GR120B, APT40GR120S, and APT40GR120B2D30 minimize switching and conduction losses. Discrete non-punch through IGBTs are offered on standalone basis or can be packaged in combination with Microsemi's FRED or silicon carbide Schottky diodes. Short Circuit Withstand Time Rated for reliable operation, transistors provide hard switching operation greater than 80 kHz, optimizing power...

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SemiSouth Announces New 1700V/1400mOhm SiC JFETs Which Simplify Fast Start-up of 3-Phase Power Supplies
Transistors

SemiSouth Announces New 1700V/1400mOhm SiC JFETs Which Simplify Fast Start-up of 3-Phase Power Supplies

Fast start-up, reduced component count, simplified design SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has announced a new 1700V/1400mOhm silicon carbide JFET which simplifies start up circuit design in 3-phase auxiliary power supplies....

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Gorbel Introduces New Mobile Fall Protection Unit
Sponsored

Gorbel Introduces New Mobile Fall Protection Unit

Providing adequate fall protection is always a critical consideration and one that in many cases can be difficult to ensure. The new Mobile Fall Protection Unit is designed to facilitate positive fall protection in applications that would typically be difficult or impossible to provide with standard methods. To learn all about the advantages and convenience, see our video.

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