Transistors

High Voltage IGBTs include 200 and 150 A dual modules.
Transistors

High Voltage IGBTs include 200 and 150 A dual modules.

Developed for use on 4,160 Vac lines, QID3320002 (3,300 V/200 A) and- QID4515002 (4,500 V/150 A) have respective isolation voltage values of 7.7KV RMS and 9.0KV RMS. Both models incorporate optimized thermal management system, with AIN ceramic substrate and copper baseplate, and offer creepage and clearance that meet IEC 60077-1. Suitable areas of use include utility power supplies, pulse...

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ON Semiconductor's Innovative New Devices Address Diverse and Challenging Automotive Applications
Miscellaneous Controls

ON Semiconductor's Innovative New Devices Address Diverse and Challenging Automotive Applications

Company continues to broaden its portfolio of robust, high performance, energy efficient solutions to address increasing electrical content in vechicles The accompanying image can be downloaded in both high and low resolution by clicking here Electronica - MUNICH, Germany. - ON Semiconductor (Nasdaq: ONNN), driving innovation in energy efficiency, has announced the launch of several new product...

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Transistors

RF Power Transistor targets ATC radar aviation applications.

New 500 Watt GaN on SiC Transistor Available Now ALISO VIEJO, Calif.,  -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, has expanded its family of radio frequency (RF) transistors based on gallium nitride (GaN) on silicon carbide (SiC) technologies with a new S-band 500 watt (W) RF device. The...

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GaN HEMTs minimize cellular network energy needs.
Transistors

GaN HEMTs minimize cellular network energy needs.

Operating at 100 or 200 W output powers, 50 V GaN HEMT Devices are available for both 1.8–2.2 GHz and 2.5–2.7 GHz frequency bands. Units are internally matched for optimum performance, enabling wide instantaneous bandwidths. Transistors are suitable for use in high efficiency Doherty power amplifiers where power gains higher than 18 dB at 2.14 GHz and 16 dB at 2.6 GHz can be achieved.

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Electronic Amplifiers

M/A-COM Technology Solutions Showcases New Products for Networks, Aerospace and Defense, and Multi-Market Applications at European Microwave Week 2012

Lowell, MA - M/A-COM Technology Solutions Inc. (M/A-COM Tech), a leading supplier of high performance analog semiconductor solutions, is showcasing a broad portfolio of new products for Networks, Aerospace and Defense, and Multi-Market applications at European Microwave (EuMW) 2012. Product solutions on display in M/A-COM Tech's booth #421 include: -· Complete SmartSet chipsets for 18 and 23 GHz...

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ON Semiconductor Expands Its High Performance Trench Field Stop IGBT Portfolio for Motor Control, Solar and Uninterruptable Power Supply Applications
Transistors

ON Semiconductor Expands Its High Performance Trench Field Stop IGBT Portfolio for Motor Control, Solar and Uninterruptable Power Supply Applications

New field stop trench technology devices expand current ratings and deliver high speed switching capabilities for demanding power applications. PHOENIX, Ariz. –  ON Semiconductor (Nasdaq: ONNN), a premier supplier of high performance silicon solutions for energy efficient electronics, has expanded its NGBTxx family of  1200 volt (V) trench field stop (FS) insulated gate bipolar transistor...

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Rectifiers (Diodes)

Vishay Intertechnology to Demonstrate Industry-Leading Technologies in Seven Product Categories at electronica 2012 in Munich

MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE:VSH) today announced that it will be exhibiting its latest industry-leading solutions for a wide variety of applications at electronica 2012, taking place Nov. 13-16 at the Munich Trade Fair Centre in Munich, Germany. In its main booth A5.143 and Automotive Innovation booth A6.A13/14, Vishay will be demonstrating a range of technologies in several...

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Transistors

Transphorm Releases Industry's First JEDEC Qualified 600V GaN HEMT

600V Gallium Nitride(GaN) High Electron Mobility Transistors (HEMT) employs patented EZ-GaN™ technology; establishes vital milestone in development of GaN devices GOLETA, Calif., -- Transphorm Inc. today announced the JEDEC qualification of the company's TPH2006PS, GaN HEMT on SiC substrate, making it the industry's first qualified 600V HEMT device. The TPH2006PS, based on its patented,...

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High-Speed Discrete IGBTs feature low saturation voltage.
Transistors

High-Speed Discrete IGBTs feature low saturation voltage.

San Jose, CA...Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has recently released a new family of high speed 600V discrete IGBTs for use in AC and DC motor control, home appliances (such as air conditioning, refrigerators, microwave ovens), UPS, solar inverters, and induction cookers. All AP20GT60...

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Transistors

RF Transistor suits secondary surveillance radio applications.

Utilizing gallium nitride on silicon carbide technologies, Model 1011GN-700ELM delivers 700 W of peak power with 21 dB of power gain and 70% drain efficiency at 1030 MHz. Unit supports short- and long-pulsed extended length message and is intended for high-power air traffic control, secondary surveillance radio applications. Transistor is built with 100% high-temperature gold metallization and...

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